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Microsemi Corporation |
DIODE GEN PURP 300V 60A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 38ns
- Current - Reverse Leakage @ Vr: 250µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-2 |
Stock6,736 |
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300V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 38ns | 250µA @ 300V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 200V 45A D3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 500µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: D3 [S]
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock2,100 |
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200V | 45A | 850mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 500µA @ 200V | - | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | D3 [S] | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 200V 25A TO220
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 830mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 250µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220 [K]
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock5,840 |
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200V | 25A | 830mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 200V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 15A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 150µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,920 |
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400V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 150µA @ 400V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 300V 15A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 32ns
- Current - Reverse Leakage @ Vr: 150µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock3,376 |
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300V | 15A | 1.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 150µA @ 300V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 1A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 40V
- Capacitance @ Vr, F: 70pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-216AA |
Stock5,216 |
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40V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | 70pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 5A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 100V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Powermite?3
- Supplier Device Package: Powermite 3
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: Powermite?3 |
Stock3,248 |
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100V | 5A | 810mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 150pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 10A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 35V
- Capacitance @ Vr, F: 700pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Powermite?3
- Supplier Device Package: Powermite 3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Powermite?3 |
Stock991,980 |
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40V | 10A | 510mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 35V | 700pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 990V 1A A-PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 990V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 18V @ 500mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 500nA @ 900V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A-PAK
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: A, Axial |
Stock3,376 |
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990V | 1A | 18V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 60ns | 500nA @ 900V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 8A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,408 |
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45V | 8A | 520mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 5A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,168 |
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45V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 15V 1A DO214BA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 15V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214BA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock600,000 |
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15V | 1A | 220mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | - | Surface Mount | DO-214AA, SMB | DO-214BA | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 16A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 670mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock6,848 |
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45V | 16A | 670mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 80A 15V DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 15V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -
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Package: DO-203AB, DO-5, Stud |
Stock7,584 |
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15V | 80A | 500mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 15V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | - |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 1A ULTRAMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Ultramite?
- Supplier Device Package: Ultramite?
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: Ultramite? |
Stock2,064 |
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40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | Ultramite? | Ultramite? | -50°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 30V 1A ULTRAMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Ultramite?
- Supplier Device Package: Ultramite?
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: Ultramite? |
Stock4,272 |
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30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | Ultramite? | Ultramite? | -50°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 20V 1A ULTRAMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Ultramite?
- Supplier Device Package: Ultramite?
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: Ultramite? |
Stock3,008 |
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20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | Ultramite? | Ultramite? | -50°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 1A ULTRAMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Ultramite?
- Supplier Device Package: Ultramite?
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: Ultramite? |
Stock3,216 |
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40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | Ultramite? | Ultramite? | -50°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 30V 1A ULTRAMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Ultramite?
- Supplier Device Package: Ultramite?
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: Ultramite? |
Stock6,416 |
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30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | Ultramite? | Ultramite? | -50°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 20V 1A ULTRAMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Ultramite?
- Supplier Device Package: Ultramite?
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: Ultramite? |
Stock3,408 |
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20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | Ultramite? | Ultramite? | -50°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 300MA U3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 500nA @ 75V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: 3-SMD, No Lead |
Stock3,472 |
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75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | U3 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 125V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 1nA @ 125V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock4,512 |
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125V | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 15A U3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: 600pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: 3-SMD, No Lead |
Stock6,480 |
|
100V | 15A | 900mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 600pF @ 5V, 1MHz | Surface Mount | 3-SMD, No Lead | U3 | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 300MA U3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 500nA @ 75V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: 3-SMD, No Lead |
Stock2,848 |
|
50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | U3 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 15A U3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: 600pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: 3-SMD, No Lead |
Stock6,016 |
|
100V | 15A | 900mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 600pF @ 5V, 1MHz | Surface Mount | 3-SMD, No Lead | U3 | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 20A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 50µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-203AA, DO-4, Stud |
Stock5,008 |
|
400V | 20A (DC) | 1.25V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 35A DO203AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock5,248 |
|
600V | 35A | 1.4V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 35A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock4,704 |
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600V | 35A | 1.4V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |