Page 48 - Microsemi Corporation Products - Diodes - Rectifiers - Single

JAN1N6622
Microsemi Corporation

DIODE GEN PURP 660V 2A AXIAL

Package: A, Axial

Stock6,624
JAN1N6621
Microsemi Corporation

DIODE GEN PURP 440V 2A AXIAL

Package: A, Axial

Stock5,888
JAN1N6620
Microsemi Corporation

DIODE GEN PURP 220V 2A AXIAL

Package: A, Axial

Stock4,224
JAN1N5807
Microsemi Corporation

DIODE GEN PURP 50V 6A AXIAL

Package: B, Axial

Stock5,968
JAN1N5804US
Microsemi Corporation

DIODE GEN PURP 100V 2.5A D5A

Package: SQ-MELF, A

Stock4,432
JAN1N5621US
Microsemi Corporation

DIODE GEN PURP 800V 1A D5A

Package: SQ-MELF, A

Stock2,064
JAN1N5618US
Microsemi Corporation

DIODE GEN PURP 600V 1A D5A

Package: SQ-MELF, A

Stock2,464
JAN1N3645
Microsemi Corporation

DIODE GEN PURP 1.4KV 250MA AXIAL

Package: S, Axial

Stock3,968
CDLL6761
Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO213AB

Package: DO-213AB, MELF

Stock6,720
CDLL2810
Microsemi Corporation

DIODE SCHOTTKY 20V 75MA DO213AA

Package: DO-213AA

Stock4,208
CDLL1A60
Microsemi Corporation

DIODE SCHOTTKY 60V 1A DO213AB

Package: DO-213AB, MELF

Stock6,576
CDLL1A50
Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO213AB

Package: DO-213AB, MELF

Stock4,560
CDLL0.5A40
Microsemi Corporation

DIODE SCHOTTKY 40V 500MA DO213AA

Package: DO-213AA

Stock6,848
CDLL0.5A30
Microsemi Corporation

DIODE SCHOTTKY 30V 500MA DO213AA

Package: DO-213AA

Stock4,672
CDLL0.5A20
Microsemi Corporation

DIODE SCHOTTKY 20V 500MA DO213AA

Package: DO-213AA

Stock2,000
CDLL0.2A40
Microsemi Corporation

DIODE SCHOTTKY 40V 200MA DO213AA

Package: DO-213AA

Stock2,992
CDLL0.2A30
Microsemi Corporation

DIODE SCHOTTKY 30V 200MA DO213AA

Package: DO-213AA

Stock3,840
CDLL0.2A20
Microsemi Corporation

DIODE SCHOTTKY 20V 200MA DO213AA

Package: DO-213AA

Stock3,280
JANTX1N3890R
Microsemi Corporation

DIODE GEN PURP 100V 12A DO203AA

Package: DO-203AA, DO-4, Stud

Stock3,776
HS243100R
Microsemi Corporation

DIODE MODULE 100V 240A HALF-PAK

Package: HALF-PAK

Stock7,088

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N6622	Microsemi Corporation	DIODE GEN PURP 660V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 660V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	Package: A, Axial	Stock6,624	660V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
JAN1N6621	Microsemi Corporation	DIODE GEN PURP 440V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 440V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	Package: A, Axial	Stock5,888	440V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 440V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
JAN1N6620	Microsemi Corporation	DIODE GEN PURP 220V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 220V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	Package: A, Axial	Stock4,224	220V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 220V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
JAN1N5807	Microsemi Corporation	DIODE GEN PURP 50V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: B, Axial	Stock5,968	50V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5804US	Microsemi Corporation	DIODE GEN PURP 100V 2.5A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Package: SQ-MELF, A	Stock4,432	100V	2.5A	975mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5621US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Package: SQ-MELF, A	Stock2,064	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5618US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	Package: SQ-MELF, A	Stock2,464	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N3645	Microsemi Corporation	DIODE GEN PURP 1.4KV 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: S, Axial Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: S, Axial	Stock3,968	1400V	250mA	5V @ 250mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1400V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
CDLL6761	Microsemi Corporation	DIODE SCHOTTKY 100V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-213AB, MELF	Stock6,720	100V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
CDLL2810	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 15V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-213AA	Stock4,208	20V	75mA	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 15V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
CDLL1A60	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -	Package: DO-213AB, MELF	Stock6,576	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-
CDLL1A50	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -	Package: DO-213AB, MELF	Stock4,560	50V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-
CDLL0.5A40	Microsemi Corporation	DIODE SCHOTTKY 40V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA	Stock6,848	40V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 40V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.5A30	Microsemi Corporation	DIODE SCHOTTKY 30V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA	Stock4,672	30V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.5A20	Microsemi Corporation	DIODE SCHOTTKY 20V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA	Stock2,000	20V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.2A40	Microsemi Corporation	DIODE SCHOTTKY 40V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA	Stock2,992	40V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.2A30	Microsemi Corporation	DIODE SCHOTTKY 30V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA	Stock3,840	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.2A20	Microsemi Corporation	DIODE SCHOTTKY 20V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA	Stock3,280	20V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
JANTX1N3890R	Microsemi Corporation	DIODE GEN PURP 100V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 115pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock3,776	100V	12A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 100V	115pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
HS243100R	Microsemi Corporation	DIODE MODULE 100V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 100V Capacitance @ Vr, F: 6400pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock7,088	100V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 100V	6400pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
SDM30004R	Microsemi Corporation	DIODE MODULE 400V 300A DIE Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -	Package: Die	Stock4,704	400V	300A	1.1V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	75µA @ 400V	-	Chassis Mount	Die	Die	-
HU20260R	Microsemi Corporation	DIODE MODULE 600V 200A HALF-PAK Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock6,096	600V	200A	1.35V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	50µA @ 600V	-	Chassis Mount	HALF-PAK	HALF-PAK	-
HU10260R	Microsemi Corporation	DIODE MODULE 600V 100A HALF-PAK Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 275pF @ 10V, 1Mhz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock2,384	600V	100A	1.35V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	50µA @ 600V	275pF @ 10V, 1Mhz	Chassis Mount	HALF-PAK	HALF-PAK	-
HS247180R	Microsemi Corporation	DIODE MODULE 180V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 180V Capacitance @ Vr, F: 6000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock7,632	180V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 180V	6000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
HS246150R	Microsemi Corporation	DIODE MODULE 150V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 150V Capacitance @ Vr, F: 6000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock6,592	150V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 150V	6000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
HS24230R	Microsemi Corporation	DIODE MODULE 30V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 550mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 30V Capacitance @ Vr, F: 10500pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock4,208	30V	240A	550mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	12mA @ 30V	10500pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
HS24045R	Microsemi Corporation	DIODE MODULE 45V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 550mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 45V Capacitance @ Vr, F: 10500pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock4,096	45V	240A	550mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	12mA @ 45V	10500pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
HS24040R	Microsemi Corporation	DIODE MODULE 40V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 550mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 40V Capacitance @ Vr, F: 10500pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock7,552	40V	240A	550mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	12mA @ 40V	10500pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-