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Microsemi Corporation |
MOSFET N-CH 1200V 34A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 34A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock5,568 |
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Microsemi Corporation |
TRANS PNP 60V 0.6A TO-18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock6,960 |
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Microsemi Corporation |
TRANS BIPO 20V 4W 55BT
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 45V
- Frequency - Transition: 2.3GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 10.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
- Current - Collector (Ic) (Max): 600mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55BT
- Supplier Device Package: 55BT
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Package: 55BT |
Stock813,336 |
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Microsemi Corporation |
DIODE ZENER 4.3V 3W DO216AA
- Voltage - Zener (Nom) (Vz): 4.3V
- Tolerance: ±2%
- Power - Max: 3W
- Impedance (Max) (Zzt): 6 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: DO-216AA
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Package: DO-216AA |
Stock5,712 |
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Microsemi Corporation |
DIODE ZENER 33V 500MW DO35
- Voltage - Zener (Nom) (Vz): 33V
- Tolerance: ±1%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 100 Ohms
- Current - Reverse Leakage @ Vr: 10nA @ 29.7V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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Package: DO-204AH, DO-35, Axial |
Stock4,768 |
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Microsemi Corporation |
DIODE ZENER 51V 1.5W D-5A
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±2%
- Power - Max: 1.5W
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 50nA @ 40.8V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
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Package: SQ-MELF, A |
Stock2,992 |
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Microsemi Corporation |
DIODE ZENER 3V 500MW DO213AA
- Voltage - Zener (Nom) (Vz): 3V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 3V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA
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Package: DO-213AA (Glass) |
Stock6,080 |
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Microsemi Corporation |
DIODE ZENER 12V 500MW DO213AB
- Voltage - Zener (Nom) (Vz): 12V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 11.5 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 9.1V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
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Package: DO-213AB, MELF |
Stock3,376 |
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Microsemi Corporation |
DIODE ZENER 9.1V 5W T18
- Voltage - Zener (Nom) (Vz): 9.1V
- Tolerance: ±2%
- Power - Max: 5W
- Impedance (Max) (Zzt): 2 Ohms
- Current - Reverse Leakage @ Vr: 7.5µA @ 6.6V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: T-18
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Package: T-18, Axial |
Stock3,472 |
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Microsemi Corporation |
DIODE ZENER 47V 5W T18
- Voltage - Zener (Nom) (Vz): 47V
- Tolerance: ±5%
- Power - Max: 5W
- Impedance (Max) (Zzt): 25 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 33.8V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: T-18
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Package: T-18, Axial |
Stock4,832 |
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Microsemi Corporation |
DIODE ZENER 91V 3W DO204AL
- Voltage - Zener (Nom) (Vz): 91V
- Tolerance: ±20%
- Power - Max: 3W
- Impedance (Max) (Zzt): 115 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 69.2V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock3,936 |
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Microsemi Corporation |
DIODE ZENER 100V 3W DO204AL
- Voltage - Zener (Nom) (Vz): 100V
- Tolerance: ±10%
- Power - Max: 3W
- Impedance (Max) (Zzt): 160 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 76V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock2,336 |
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Microsemi Corporation |
DIODE ARRAY GP 50V 400MA 16SOIC
- Diode Configuration: 8 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io) (per Diode): 400mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock6,720 |
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Microsemi Corporation |
IC POE CONTROLLER PD PSE 32QFN
- Type: Controller (PD)
- Number of Channels: 1
- Power - Max: 47.7W
- Internal Switch(s): No
- Auxiliary Sense: No
- Standards: 802.3at (PoE+), 802.3af (PoE)
- Voltage - Supply: 0 V ~ 57 V
- Current - Supply: 200µA
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-QFN (5x5)
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Package: 32-VFQFN Exposed Pad |
Stock19,224 |
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Microsemi Corporation |
DIODE CURRENT REG 100V
- Function: Current Regulator
- Sensing Method: -
- Accuracy: ±10%
- Voltage - Input: 100V (Max)
- Current - Output: 270µA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB (MELF, LL41)
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Package: DO-213AB, MELF |
Stock6,160 |
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Microsemi Corporation |
IC FPGA 81 I/O 100VQFP
- Number of LABs/CLBs: 1452
- Number of Logic Elements/Cells: -
- Total RAM Bits: -
- Number of I/O: 81
- Number of Gates: 24000
- Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
- Mounting Type: Surface Mount
- Operating Temperature: 0°C ~ 70°C (TA)
- Package / Case: 100-TQFP
- Supplier Device Package: 100-VQFP (14x14)
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Package: 100-TQFP |
Stock6,992 |
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Microsemi Corporation |
IC FPGA 341 I/O 484FBGA
- Number of LABs/CLBs: -
- Number of Logic Elements/Cells: -
- Total RAM Bits: 516096
- Number of I/O: 341
- Number of Gates: 3000000
- Voltage - Supply: 1.425 V ~ 1.575 V
- Mounting Type: Surface Mount
- Operating Temperature: 0°C ~ 85°C (TJ)
- Package / Case: 484-BGA
- Supplier Device Package: 484-FPBGA (23x23)
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Package: 484-BGA |
Stock5,952 |
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Microsemi Corporation |
IC FPGA 101 I/O 128VQFN
- Number of LABs/CLBs: -
- Number of Logic Elements/Cells: 792
- Total RAM Bits: -
- Number of I/O: 101
- Number of Gates: 30000
- Voltage - Supply: 1.425 V ~ 1.575 V
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 100°C (TJ)
- Package / Case: 128-TQFP
- Supplier Device Package: 128-VTQFP (14x14)
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Package: 128-TQFP |
Stock7,120 |
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Microsemi Corporation |
IC TIMING-OVER-PACKET 256TEBGA-2
- PLL: Yes
- Main Purpose: Ethernet
- Input: Clock
- Output: Clock
- Number of Circuits: 1
- Ratio - Input:Output: 11:8
- Differential - Input:Output: No/No
- Frequency - Max: 125MHz
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 256-BGA
- Supplier Device Package: 256-BGA (17x17)
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Package: 256-BGA |
Stock13,476 |
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Microsemi Corporation |
TVS DIODE 300VWM 482VC CASE1
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 300V
- Voltage - Breakdown (Min): 332V
- Voltage - Clamping (Max) @ Ipp: 482V
- Current - Peak Pulse (10/1000µs): 4A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: CASE-1
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Package: DO-201AA, DO-27, Axial |
Stock6,750 |
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Microsemi Corporation |
TVS DIODE 60VWM 96.8VC PLAD
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 60V
- Voltage - Breakdown (Min): 66.7V
- Voltage - Clamping (Max) @ Ipp: 96.8V
- Current - Peak Pulse (10/1000µs): 312A
- Power - Peak Pulse: 30000W (30kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Nonstandard SMD
- Supplier Device Package: PLAD
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Package: Nonstandard SMD |
Stock7,056 |
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Microsemi Corporation |
TVS DIODE 5.8VWM 10.5VC T18
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.8V
- Voltage - Breakdown (Min): 6.45V
- Voltage - Clamping (Max) @ Ipp: 10.5V
- Current - Peak Pulse (10/1000µs): 57A
- Power - Peak Pulse: 600W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: T-18
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Package: T-18, Axial |
Stock4,896 |
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Microsemi Corporation |
TVS DIODE 7VWM 12VC DO214AB
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 7V
- Voltage - Breakdown (Min): 7.78V
- Voltage - Clamping (Max) @ Ipp: 12V
- Current - Peak Pulse (10/1000µs): 250A
- Power - Peak Pulse: 3000W (3kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
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Package: DO-214AB, SMC |
Stock2,304 |
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Microsemi Corporation |
TVS DIODE 75VWM 121VC DO214AB
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 75V
- Voltage - Breakdown (Min): 83.3V
- Voltage - Clamping (Max) @ Ipp: 121V
- Current - Peak Pulse (10/1000µs): 24.8A
- Power - Peak Pulse: 3000W (3kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
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Package: DO-214AB, SMC |
Stock3,834 |
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Microsemi Corporation |
TVS DIODE 150VWM 243VC DO214AB
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 150V
- Voltage - Breakdown (Min): 167V
- Voltage - Clamping (Max) @ Ipp: 243V
- Current - Peak Pulse (10/1000µs): 12.4A
- Power - Peak Pulse: 3000W (3kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
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Package: DO-214AB, SMC |
Stock5,148 |
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Microsemi Corporation |
TVS DIODE 75VWM 121VC DO214AB
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 75V
- Voltage - Breakdown (Min): 83.3V
- Voltage - Clamping (Max) @ Ipp: 121V
- Current - Peak Pulse (10/1000µs): 12.4A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMCJ)
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Package: DO-214AB, SMC |
Stock2,934 |
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Microsemi Corporation |
TVS DIODE 45VWM 80.5VC DO215AB
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 45V
- Voltage - Breakdown (Min): 50.4V
- Voltage - Clamping (Max) @ Ipp: 80.5V
- Current - Peak Pulse (10/1000µs): 18.6A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-215AB, SMC Gull Wing
- Supplier Device Package: DO-215AB (SMCG)
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Package: DO-215AB, SMC Gull Wing |
Stock7,038 |
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Microsemi Corporation |
NPN TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
- Power - Max: 6 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
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Package: - |
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