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Microsemi Corporation |
N CHANNEL JFET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 40 Ohm
- Power - Max: 360mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock5,856 |
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Microsemi Corporation |
IGBT 600V 58A 192W SOT227
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 58A
- Power - Max: 192W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Current - Collector Cutoff (Max): 40µA
- Input Capacitance (Cies) @ Vce: 1.85nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: ISOTOP?
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Package: SOT-227-4, miniBLOC |
Stock2,464 |
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Microsemi Corporation |
MOSFET 4N-CH 800V 15A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
- Power - Max: 156W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock6,816 |
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Microsemi Corporation |
RF TRANS NPN 18V 200MA 8SOIC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2dB @ 500MHz
- Gain: 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock266,268 |
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Microsemi Corporation |
TRANS 8NPN DARL 50V 0.5A 18DIP
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 18-CDIP
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Package: - |
Stock4,144 |
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Microsemi Corporation |
DIODE ZENER 8.2V 3W DO216AA
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±2%
- Power - Max: 3W
- Impedance (Max) (Zzt): 3.5 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 6.5V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: DO-216AA
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Package: DO-216AA |
Stock6,304 |
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Microsemi Corporation |
DIODE ZENER 110V 1W DO204AL
- Voltage - Zener (Nom) (Vz): 110V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 570 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 83.6V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock5,088 |
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Microsemi Corporation |
DIODE ZENER 9.1V 1W DO213AB
- Voltage - Zener (Nom) (Vz): 9.1V
- Tolerance: ±1%
- Power - Max: 1W
- Impedance (Max) (Zzt): 6 Ohms
- Current - Reverse Leakage @ Vr: 25µA @ 6.9V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB (MELF, LL41)
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Package: DO-213AB, MELF (Glass) |
Stock2,752 |
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Microsemi Corporation |
DIODE ZENER 5.1V 500MW DO213AA
- Voltage - Zener (Nom) (Vz): 5.1V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 26 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 2.5V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA
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Package: DO-213AA (Glass) |
Stock4,112 |
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Microsemi Corporation |
DIODE ZENER 82V 1W DO213AB
- Voltage - Zener (Nom) (Vz): 82V
- Tolerance: ±10%
- Power - Max: 1W
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 62.2V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
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Package: DO-213AB, MELF |
Stock3,888 |
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Microsemi Corporation |
DIODE ZENER 8.2V 500MW DO213AB
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 6.3V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
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Package: DO-213AB, MELF |
Stock2,448 |
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Microsemi Corporation |
DIODE ZENER 91V 5W T18
- Voltage - Zener (Nom) (Vz): 91V
- Tolerance: ±5%
- Power - Max: 5W
- Impedance (Max) (Zzt): 75 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 65.5V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: T-18
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Package: T-18, Axial |
Stock3,216 |
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Microsemi Corporation |
DIODE ZENER 15V 3W DO216AA
- Voltage - Zener (Nom) (Vz): 15V
- Tolerance: ±2%
- Power - Max: 3W
- Impedance (Max) (Zzt): 8 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 11.4V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: DO-216AA
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Package: DO-216AA |
Stock3,232 |
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Microsemi Corporation |
DIODE ZENER 68V 5W SMBJ
- Voltage - Zener (Nom) (Vz): 68V
- Tolerance: ±2%
- Power - Max: 5W
- Impedance (Max) (Zzt): 44 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 49V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMBJ (DO-214AA)
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Package: DO-214AA, SMB |
Stock4,560 |
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Microsemi Corporation |
DIODE ZENER 75V 3W DO216AA
- Voltage - Zener (Nom) (Vz): 75V
- Tolerance: ±5%
- Power - Max: 3W
- Impedance (Max) (Zzt): 140 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 56V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: DO-216AA
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Package: DO-216AA |
Stock2,496 |
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Microsemi Corporation |
DIODE ZENER 82V 1W DO216
- Voltage - Zener (Nom) (Vz): 82V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 250 Ohms
- Current - Reverse Leakage @ Vr: 10nA @ 62.32V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: DO-216
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Package: DO-216AA |
Stock4,976 |
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Microsemi Corporation |
DIODE SCHOTTKY 90V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMBJ)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AA, SMB |
Stock4,704 |
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Microsemi Corporation |
DIODE SCHOTTKY 60V 7A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 7A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 7A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: 375pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-216AA |
Stock3,136 |
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Microsemi Corporation |
DIODE MODULE 200V 35A
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 35A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Operating Temperature - Junction: -
- Mounting Type: Screw Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock3,936 |
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Microsemi Corporation |
IC FPGA 56 I/O 100TQFP
- Number of LABs/CLBs: -
- Number of Logic Elements/Cells: 128
- Total RAM Bits: -
- Number of I/O: 56
- Number of Gates: 3000
- Voltage - Supply: 2.3 V ~ 2.7 V
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,880 |
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Microsemi Corporation |
IC FPGA 444 I/O 676FBGA
- Number of LABs/CLBs: -
- Number of Logic Elements/Cells: -
- Total RAM Bits: 276480
- Number of I/O: 444
- Number of Gates: 1500000
- Voltage - Supply: 1.425 V ~ 1.575 V
- Mounting Type: Surface Mount
- Operating Temperature: 0°C ~ 85°C (TJ)
- Package / Case: 676-BGA
- Supplier Device Package: 676-FBGA (27x27)
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Package: 676-BGA |
Stock5,504 |
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Microsemi Corporation |
IC FPGA 207 I/O 400VFBGA
- Number of LABs/CLBs: -
- Number of Logic Elements/Cells: 27696
- Total RAM Bits: 1130496
- Number of I/O: 207
- Number of Gates: -
- Voltage - Supply: 1.14 V ~ 2.625 V
- Mounting Type: Surface Mount
- Operating Temperature: 0°C ~ 85°C (TJ)
- Package / Case: 400-LFBGA
- Supplier Device Package: 400-VFBGA (17x17)
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Package: 400-LFBGA |
Stock2,100 |
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Microsemi Corporation |
TVS DIODE 98.8VWM 178.8VC CPKG
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 98.8V
- Voltage - Breakdown (Min): 123.5V
- Voltage - Clamping (Max) @ Ipp: 178.8V
- Current - Peak Pulse (10/1000µs): 8.4A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, C
- Supplier Device Package: C, SQ-MELF
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Package: SQ-MELF, C |
Stock6,966 |
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Microsemi Corporation |
TVS DIODE 28VWM 45.4VC DO204AR
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 28V
- Voltage - Breakdown (Min): 31.1V
- Voltage - Clamping (Max) @ Ipp: 45.5V
- Current - Peak Pulse (10/1000µs): 110A
- Power - Peak Pulse: 5000W (5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
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Package: DO-204AR, Axial |
Stock4,950 |
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Microsemi Corporation |
TVS DIODE 137VC 132A PLAD
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 85V
- Voltage - Breakdown (Min): 94.4V
- Voltage - Clamping (Max) @ Ipp: 137V
- Current - Peak Pulse (10/1000µs): 132A
- Power - Peak Pulse: 18000W (18kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Nonstandard SMD
- Supplier Device Package: PLAD
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Package: Nonstandard SMD |
Stock2,016 |
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Microsemi Corporation |
TVS DIODE 22VWM 35.5VC PLAD
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 22V
- Voltage - Breakdown (Min): 24.4V
- Voltage - Clamping (Max) @ Ipp: 35.5V
- Current - Peak Pulse (10/1000µs): 183A
- Power - Peak Pulse: 6500W (6.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Nonstandard SMD
- Supplier Device Package: PLAD
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Package: Nonstandard SMD |
Stock6,606 |
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Microsemi Corporation |
TVS DIODE 64VWM 103VC DO215AA
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 64V
- Voltage - Breakdown (Min): 71.1V
- Voltage - Clamping (Max) @ Ipp: 103V
- Current - Peak Pulse (10/1000µs): 5.8A
- Power - Peak Pulse: 600W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-215AA, SMB Gull Wing
- Supplier Device Package: SMBG (DO-215AA)
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Package: DO-215AA, SMB Gull Wing |
Stock4,626 |
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Microsemi Corporation |
TRANS NPN 15V 200MA
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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