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NXP |
MOSFET N-CH 40V 100A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,392 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2V @ 1mA | 94nC @ 5V | 10502pF @ 25V | ±15V | - | 300W (Tc) | 2.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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|
NXP |
MOSFET N-CH 30V 95.9A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 95.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock2,080 |
|
MOSFET (Metal Oxide) | 30V | 95.9A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 22.9nC @ 4.5V | 2786pF @ 12V | ±20V | - | 62.5W (Tc) | 4.3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 30V 76.7A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock2,432 |
|
MOSFET (Metal Oxide) | 30V | 76.7A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 15.2nC @ 4.5V | 2260pF @ 12V | ±20V | - | 62.5W (Tc) | 6 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 40V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11323pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 333W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,560 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 1mA | 175nC @ 10V | 11323pF @ 25V | ±20V | - | 333W (Tc) | 2.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 25V 100A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3735pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 164W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock6,944 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 59nC @ 10V | 3735pF @ 12V | ±20V | - | 164W (Tc) | 1.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 60V 570MA SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 570mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 560mW (Tc)
- Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323-3
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock3,952 |
|
MOSFET (Metal Oxide) | 60V | 570mA (Ta) | 10V | 2V @ 250µA | 1.05nC @ 10V | 23pF @ 30V | ±20V | - | 560mW (Tc) | 920 mOhm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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NXP |
MOSFET N-CH 60V 10.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,328 |
|
MOSFET (Metal Oxide) | 60V | 10.3A (Tc) | 10V | 4V @ 1mA | 5.8nC @ 10V | 250pF @ 25V | ±20V | - | 33W (Tc) | 150 mOhm @ 5.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
NXP |
MOSFET N-CH 55V 3.5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock4,608 |
|
MOSFET (Metal Oxide) | 55V | 3.5A (Ta) | 10V | 4V @ 1mA | - | 500pF @ 25V | ±16V | - | 1.8W (Ta) | 80 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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|
NXP |
MOSFET N-CH 30V 90A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 54.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,400 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 54.8nC @ 10V | 3470pF @ 25V | ±16V | - | 128W (Tc) | 5.2 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NXP |
MOSFET N-CH 100V 3.5A SC73
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 374pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 6.9W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.75A, 5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock2,640 |
|
MOSFET (Metal Oxide) | 100V | 3.5A (Tc) | 5V | 2V @ 1mA | 12.2nC @ 5V | 374pF @ 25V | ±16V | - | 6.9W (Tc) | 250 mOhm @ 1.75A, 5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 55V 13A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 339pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 137 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,336 |
|
MOSFET (Metal Oxide) | 55V | 13A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 339pF @ 25V | ±10V | - | 53W (Tc) | 137 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 30V LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock2,256 |
|
MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 55V 12A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 8W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock5,776 |
|
MOSFET (Metal Oxide) | 55V | 12A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 1594pF @ 25V | ±10V | - | 8W (Tc) | 29 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 40V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,840 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 88nC @ 10V | 5200pF @ 25V | ±16V | - | 158W (Tc) | 4.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 20V 1.02A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 560mW (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323-3
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock252,000 |
|
MOSFET (Metal Oxide) | 20V | 1.02A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 0.89nC @ 4.5V | 45pF @ 20V | ±8V | - | 560mW (Tc) | 340 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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|
NXP |
MOSFET N-CH 20V 3.76A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 650mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.92W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock142,800 |
|
MOSFET (Metal Oxide) | 20V | 3.76A (Tc) | 2.5V, 4.5V | 650mV @ 1mA | 5.4nC @ 4.5V | 230pF @ 10V | ±8V | - | 1.92W (Tc) | 85 mOhm @ 3.6A, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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|
NXP |
MOSFET N-CH 40V 90A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,032 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 67nC @ 10V | 3720pF @ 25V | ±16V | - | 128W (Tc) | 6.2 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
NXP |
MOSFET N-CH 40V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,704 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 117nC @ 10V | 5730pF @ 25V | ±20V | - | 300W (Tc) | 4.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
NXP |
MOSFET N-CH 55V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 254W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,216 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 64nC @ 10V | 5100pF @ 25V | ±20V | - | 254W (Tc) | 6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
NXP |
MOSFET N-CH 30V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,608 |
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MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 8600pF @ 25V | ±10V | - | 230W (Tc) | 4.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 75V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,800 |
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MOSFET (Metal Oxide) | 75V | 75A (Tj) | 4.5V, 10V | 2V @ 1mA | - | 8840pF @ 25V | ±10V | - | 230W (Tc) | 8.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 55V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4307pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,472 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 68nC @ 5V | 4307pF @ 25V | ±15V | - | 200W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 20V 5.7A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock2,768 |
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MOSFET (Metal Oxide) | 20V | 5.7A (Tc) | 1.8V, 4.5V | 700mV @ 1mA | 10.6nC @ 4.5V | 740pF @ 10V | ±8V | - | 1.75W (Tc) | 34 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 20V 5.7A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 20V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock7,136 |
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MOSFET (Metal Oxide) | 20V | 5.7A (Tc) | 4.5V, 10V | 2V @ 1mA | 13.1nC @ 10V | 500pF @ 20V | ±15V | - | 1.75W (Tc) | 34 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 20V 4.1A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 20V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock3,968 |
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MOSFET (Metal Oxide) | 20V | 4.1A (Tc) | 4.5V, 10V | 2V @ 1mA | 13.1nC @ 10V | 500pF @ 20V | ±15V | - | 1.75W (Tc) | 65 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 30V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 204W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,456 |
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MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 114nC @ 10V | 6960pF @ 25V | ±16V | - | 204W (Tc) | 3.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 30V 23.7A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,280 |
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MOSFET (Metal Oxide) | 30V | 23.7A (Tc) | 4.5V, 10V | 2V @ 1mA | 30.3nC @ 4.5V | 2800pF @ 20V | ±20V | - | 6.25W (Tc) | 6.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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NXP |
MOSFET N-CH 30V 100A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock7,392 |
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MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 30.5nC @ 4.5V | 4840pF @ 12V | ±20V | - | 62.5W (Tc) | 3.3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |