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|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock210,636 |
|
600V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 15A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock6,304 |
|
400V | 15A | 1.25V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 400V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 35V 16A TO220-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock96,180 |
|
35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 16A TO220-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock21,144 |
|
45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 35V 10A TO220-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock45,756 |
|
35V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE SCHOTTKY 45V 10A TO220-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock285,276 |
|
45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE SCHOTTKY 60V 10A TO220-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock117,216 |
|
60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-201AA, DO-27, Axial |
Stock8,484 |
|
40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 40V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 120V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 100V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,546,872 |
|
120V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: DO-201AA, DO-27, Axial |
Stock131,880 |
|
200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: DO-201AA, DO-27, Axial |
Stock5,776 |
|
400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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|
ON Semiconductor |
DIODE GP 100V 6A MICRODE BUTTON
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Button, Axial
- Supplier Device Package: Microde Button
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: Button, Axial |
Stock2,192 |
|
100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 100V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GP 50V 6A MICRODE BUTTON
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Button, Axial
- Supplier Device Package: Microde Button
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: Button, Axial |
Stock4,560 |
|
50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 50V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GP 200V 6A MICRODE BUTTON
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Button, Axial
- Supplier Device Package: Microde Button
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: Button, Axial |
Stock6,288 |
|
200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GP 600V 6A MICRODE BUTTON
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Button, Axial
- Supplier Device Package: Microde Button
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: Button, Axial |
Stock3,488 |
|
600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GP 400V 6A MICRODE BUTTON
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Button, Axial
- Supplier Device Package: Microde Button
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: Button, Axial |
Stock5,488 |
|
400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 400V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: DO-201AA, DO-27, Axial |
Stock358,404 |
|
600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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|
ON Semiconductor |
DIODE GEN PURP 50V 2A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-214AA, SMB |
Stock532,956 |
|
50V | 2A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 50V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GEN PURP 600V 2A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-214AA, SMB |
Stock600,000 |
|
600V | 2A | 1.45V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GEN PURP 300V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-214AC, SMA |
Stock628,284 |
|
300V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 300V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
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|
ON Semiconductor |
DIODE GEN PURP 1KV 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AL, DO-41, Axial |
Stock6,000 |
|
1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 150V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AL, DO-41, Axial |
Stock71,748 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AL, DO-41, Axial |
Stock4,832 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-214AC, SMA |
Stock408,300 |
|
400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-214AC, SMA |
Stock600,168 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 800V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-214AC, SMA |
Stock2,464 |
|
800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-214AC, SMA |
Stock233,868 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock60,060 |
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200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |