Page 16 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

SCH1435-TL-W
ON Semiconductor

MOSFET N-CH 30V 3A SCH6

Package: SOT-563, SOT-666

Stock4,816
SCH1430-TL-H
ON Semiconductor

MOSFET N-CH 20V 2A SCH6

Package: SOT-563, SOT-666

Stock120,000
SCH1337-TL-H
ON Semiconductor

MOSFET P-CH 30V 2A SCH6

Package: SOT-563, SOT-666

Stock7,776
MCH5839-TL-W
ON Semiconductor

MOSFET P-CH 20V 1.5A MCPH

Package: 5-SMD, Flat Leads

Stock6,544
CPH6337-TL-W
ON Semiconductor

MOSFET P-CH 12V 3.5A CPH6

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,168
SCH1439-TL-W
ON Semiconductor

MOSFET N-CH 30V 3.5A SOT563

Package: SOT-563, SOT-666

Stock5,440
CPH3461-TL-W
ON Semiconductor

MOSFET N-CH 250V 0.35A CPH3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,248
NTNS3A67PZT5G
ON Semiconductor

MOSFET P-CH 20V SOT883

Package: SC-101, SOT-883

Stock4,784
NTNS3166NZT5G
ON Semiconductor

MOSFET N-CH 20V 0.361A SOT883

Package: SC-101, SOT-883

Stock7,424
SCH2825-TL-E
ON Semiconductor

MOSFET N-CH 30V 1.6A SCH6

Package: 6-SMD, Flat Leads

Stock177,396
SCH1332-TL-H
ON Semiconductor

MOSFET P-CH 20V 2.5A SCH6

Package: SOT-563, SOT-666

Stock4,208
SCH1433-TL-W
ON Semiconductor

MOSFET N-CH 20V 3.5A SOT563

Package: SOT-563, SOT-666

Stock3,440
NTTFS4C10NTWG
ON Semiconductor

MOSFET N-CH 30V 44A U8FL

Package: 8-PowerWDFN

Stock3,472
MCH6320-TL-W
ON Semiconductor

MOSFET P-CH 12V 3.5A MCPH6

Package: 6-SMD, Flat Leads

Stock3,984
NTHS5443T1G
ON Semiconductor

MOSFET P-CH 20V 3.6A CHIPFET

Package: 8-SMD, Flat Lead

Stock284,232
MCH6421-TL-W
ON Semiconductor

MOSFET N-CH 20V 5.5A MCPH6

Package: 6-SMD, Flat Leads

Stock4,512
MCH6337-TL-W
ON Semiconductor

MOSFET P-CH 20V 4.5A MCPH6

Package: 6-SMD, Flat Leads

Stock2,416
MCH6341-TL-W
ON Semiconductor

MOSFET P-CH 30V 5A MCPH6

Package: 6-SMD, Flat Leads

Stock7,728
SCH1332-TL-W
ON Semiconductor

MOSFET P-CH 20V 2.5A SOT563

Package: SOT-563, SOT-666

Stock2,736
NVR4501NT1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,984

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SCH1435-TL-W	ON Semiconductor	MOSFET N-CH 30V 3A SCH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 89 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock4,816	MOSFET (Metal Oxide)	30V	3A (Ta)	1.8V, 4.5V	-	3.5nC @ 4.5V	265pF @ 10V	±12V	-	800mW (Ta)	89 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
SCH1430-TL-H	ON Semiconductor	MOSFET N-CH 20V 2A SCH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock120,000	MOSFET (Metal Oxide)	20V	2A (Ta)	1.8V, 4.5V	-	1.8nC @ 4.5V	128pF @ 10V	±12V	-	800mW (Ta)	125 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
SCH1337-TL-H	ON Semiconductor	MOSFET P-CH 30V 2A SCH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock7,776	MOSFET (Metal Oxide)	30V	2A (Ta)	4V, 10V	-	3.9nC @ 10V	172pF @ 10V	±20V	-	800mW (Ta)	150 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
MCH5839-TL-W	ON Semiconductor	MOSFET P-CH 20V 1.5A MCPH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 266 mOhm @ 750mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88AFL/MCPH5 Package / Case: 5-SMD, Flat Leads	Package: 5-SMD, Flat Leads	Stock6,544	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.8V, 4.5V	1.4V @ 1mA	1.7nC @ 4.5V	120pF @ 10V	±10V	-	800mW (Ta)	266 mOhm @ 750mA, 4.5V	150°C (TJ)	Surface Mount	SC-88AFL/MCPH5	5-SMD, Flat Leads
CPH6337-TL-W	ON Semiconductor	MOSFET P-CH 12V 3.5A CPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,168	MOSFET (Metal Oxide)	12V	3.5A (Ta)	1.8V, 4.5V	1.4V @ 1mA	5.6nC @ 4.5V	405pF @ 6V	±10V	-	1.6W (Ta)	70 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
SCH1439-TL-W	ON Semiconductor	MOSFET N-CH 30V 3.5A SOT563 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock5,440	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4V, 10V	2.6V @ 1mA	5.6nC @ 10V	280pF @ 10V	±20V	-	1W (Ta)	72 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	SOT-563/SCH6	SOT-563, SOT-666
CPH3461-TL-W	ON Semiconductor	MOSFET N-CH 250V 0.35A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 170mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,248	MOSFET (Metal Oxide)	250V	350mA (Ta)	2.5V, 4.5V	1.3V @ 1mA	2.1nC @ 4.5V	140pF @ 20V	±10V	-	1W (Ta)	6.5 Ohm @ 170mA, 4.5V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
NTNS3A67PZT5G	ON Semiconductor	MOSFET P-CH 20V SOT883 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock4,784	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-883 (XDFN3) (1x0.6)	SC-101, SOT-883
NTNS3166NZT5G	ON Semiconductor	MOSFET N-CH 20V 0.361A SOT883 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock7,424	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-883 (XDFN3) (1x0.6)	SC-101, SOT-883
SCH2825-TL-E	ON Semiconductor	MOSFET N-CH 30V 1.6A SCH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 800mA, 10V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock177,396	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4V, 10V	-	2nC @ 10V	88pF @ 10V	±20V	Schottky Diode (Isolated)	600mW (Ta)	180 mOhm @ 800mA, 10V	-55°C ~ 125°C (TJ)	Surface Mount	6-SCH	6-SMD, Flat Leads
SCH1332-TL-H	ON Semiconductor	MOSFET P-CH 20V 2.5A SCH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock4,208	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	4.6nC @ 4.5V	375pF @ 10V	±10V	-	1W (Ta)	95 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
SCH1433-TL-W	ON Semiconductor	MOSFET N-CH 20V 3.5A SOT563 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,440	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	2.8nC @ 4.5V	260pF @ 10V	±10V	-	800mW (Ta)	64 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	SOT-563/SCH6	SOT-563, SOT-666
NTTFS4C10NTWG	ON Semiconductor	MOSFET N-CH 30V 44A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 993pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,472	MOSFET (Metal Oxide)	30V	8.2A (Ta), 44A (Tc)	4.5V, 10V	2.2V @ 250µA	18.6nC @ 10V	993pF @ 15V	±20V	-	790mW (Ta), 23.6W (Tc)	7.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
MCH6320-TL-W	ON Semiconductor	MOSFET P-CH 12V 3.5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/ MCPH6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock3,984	MOSFET (Metal Oxide)	12V	3.5A (Ta)	1.8V, 4.5V	1.4V @ 1mA	5.6nC @ 4.5V	405pF @ 6V	±10V	-	1.5W (Ta)	70 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	SC-88FL/ MCPH6	6-SMD, Flat Leads
NTHS5443T1G	ON Semiconductor	MOSFET P-CH 20V 3.6A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock284,232	MOSFET (Metal Oxide)	20V	3.6A (Ta)	2.5V, 4.5V	600mV @ 250µA	12nC @ 4.5V	-	±12V	-	1.3W (Ta)	65 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
MCH6421-TL-W	ON Semiconductor	MOSFET N-CH 20V 5.5A MCPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/ MCPH6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock4,512	MOSFET (Metal Oxide)	20V	5.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	5.1nC @ 4.5V	410pF @ 10V	±12V	-	1.5W (Ta)	38 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	SC-88FL/ MCPH6	6-SMD, Flat Leads
MCH6337-TL-W	ON Semiconductor	MOSFET P-CH 20V 4.5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock2,416	MOSFET (Metal Oxide)	20V	4.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	7.3nC @ 4.5V	670pF @ 10V	±10V	-	1.5W (Ta)	49 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	6-MCPH	6-SMD, Flat Leads
MCH6341-TL-W	ON Semiconductor	MOSFET P-CH 30V 5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock7,728	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.6V @ 1mA	10nC @ 10V	430pF @ 10V	±20V	-	-	59 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	6-MCPH	6-SMD, Flat Leads
SCH1332-TL-W	ON Semiconductor	MOSFET P-CH 20V 2.5A SOT563 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock2,736	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	4.6nC @ 4.5V	375pF @ 10V	±10V	-	1W (Ta)	95 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	SOT-563/SCH6	SOT-563, SOT-666
NVR4501NT1G	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,984	MOSFET (Metal Oxide)	20V	3.2A (Ta)	2.5V, 4.5V	1.2V @ 250µA	6nC @ 4.5V	200pF @ 10V	±12V	-	1.25W (Tj)	80 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MCH3377-TL-W	ON Semiconductor	MOSFET P-CH 20V 3A MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock58,212	MOSFET (Metal Oxide)	20V	3A (Ta)	1.8V, 4.5V	-	4.6nC @ 4.5V	375pF @ 10V	±10V	-	1W (Ta)	83 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	3-MCPH	3-SMD, Flat Leads
SCH1330-TL-H	ON Semiconductor	MOSFET P-CH 20V 1.5A SCH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 241 mOhm @ 750mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock276,000	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.8V, 4.5V	1.4V @ 1mA	1.7nC @ 4.5V	120pF @ 10V	±10V	-	1W (Ta)	241 mOhm @ 750mA, 4.5V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
NVTR0202PLT1G	ON Semiconductor	MOSFET P-CH 20V 0.4A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock468,264	MOSFET (Metal Oxide)	20V	400mA (Ta)	4.5V, 10V	2.3V @ 250µA	2.18nC @ 10V	70pF @ 5V	±20V	-	225mW (Ta)	800 mOhm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NTR4501NST1G	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,288	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MVMBF0201NLT1G	ON Semiconductor	MOSFET N-CH 20V 300MA SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,408	MOSFET (Metal Oxide)	20V	300mA (Ta)	4.5V, 10V	2.4V @ 250µA	-	45pF @ 5V	±20V	-	225mW (Ta)	1 Ohm @ 300mA, 10V	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NVR5198NLT3G	ON Semiconductor	MOSFET N-CH 60V 2.2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 155 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,200	MOSFET (Metal Oxide)	60V	1.7A (Ta)	4.5V, 10V	2.5V @ 250µA	5.1nC @ 10V	182pF @ 25V	±20V	-	900mW (Ta)	155 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NVR5124PLT1G	ON Semiconductor	MOSFET P-CH 60V SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 230 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,776	MOSFET (Metal Oxide)	60V	1.1A (Ta)	4.5V, 10V	2.5V @ 250µA	4.3nC @ 10V	240pF @ 25V	±20V	-	470mW (Ta)	230 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SCH1436-TL-W	ON Semiconductor	MOSFET N-CH 30V 1.8A SOT563 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock6,800	MOSFET (Metal Oxide)	30V	1.8A (Ta)	4V, 10V	2.6V @ 1mA	2nC @ 10V	88pF @ 10V	±20V	-	800mW (Ta)	180 mOhm @ 900mA, 10V	150°C (TJ)	Surface Mount	SOT-563/SCH6	SOT-563, SOT-666