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ON Semiconductor |
MOSFET N-CH 30V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.46W (Ta), 21.6W (Tc)
- Rds On (Max) @ Id, Vgs: 7.35 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock6,528 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta), 38A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 15.2nC @ 10V | 770pF @ 15V | ±20V | - | 2.46W (Ta), 21.6W (Tc) | 7.35 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 3.5A CPH5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-CPH
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock5,376 |
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MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 1.8V, 4.5V | - | 4.7nC @ 4.5V | 430pF @ 10V | ±12V | Schottky Diode (Isolated) | 900mW (Ta) | 52 mOhm @ 2A, 4.5V | -55°C ~ 125°C (TJ) | Surface Mount | 5-CPH | SC-74A, SOT-753 |
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ON Semiconductor |
MOSFET P-CH 12V 3.5A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock671,532 |
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MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 1.2V, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 1157pF @ 6V | ±8V | - | 700mW (Ta) | 40 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 75A U8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock5,184 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta), 75A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 1988pF @ 15V | ±20V | - | 820mW (Ta), 33W (Tc) | 3.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 400V 2.1A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,536 |
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MOSFET (Metal Oxide) | 400V | 2.1A (Tc) | 10V | 4.5V @ 50µA | 6.6nC @ 10V | 140pF @ 50V | ±30V | - | 37W (Tc) | 3.4 Ohm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 25A ATPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: ATPAK (2 leads+tab)
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Package: ATPAK (2 leads+tab) |
Stock173,724 |
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MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | - | 18.5nC @ 10V | 875pF @ 10V | ±20V | - | 30W (Tc) | 30 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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ON Semiconductor |
MOSFET P-CH 1.8A 60V CPH3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,552 |
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MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4V, 10V | 2.6V @ 1mA | 6nC @ 10V | 262pF @ 20V | ±20V | - | 1.2W (Ta) | 250 mOhm @ 1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
- Rds On (Max) @ Id, Vgs: 4.73 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock5,600 |
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MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | ±20V | - | 2.51W (Ta), 25.5W (Tc) | 4.73 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 250V 1.2A SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 600mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89/PCP-2
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock32,028 |
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MOSFET (Metal Oxide) | 250V | 1.2A (Ta) | 10V | 3.5V @ 1mA | 4.2nC @ 10V | 210pF @ 20V | ±30V | - | 3.5W (Tc) | 2.4 Ohm @ 600mA, 10V | 150°C (TJ) | Surface Mount | SOT-89/PCP-2 | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 30V 11.9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 770mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,152 |
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MOSFET (Metal Oxide) | 30V | 11.9A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 14nC @ 4.5V | 1972pF @ 15V | ±20V | - | 770mW (Ta) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 10.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock999,468 |
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MOSFET (Metal Oxide) | 25V | 10.4A (Ta), 65A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 16.5nC @ 4.5V | 1308pF @ 12V | ±20V | - | 1.28W (Ta), 50W (Tc) | 7.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 3.6A 6WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock18,000 |
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MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 13nC @ 4.5V | 650pF @ 15V | ±12V | - | 700mW (Ta) | 35 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 30V 7.5A ECH8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-28FL/ECH8
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock4,032 |
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MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 18nC @ 10V | 875pF @ 10V | ±20V | - | 1.5W (Ta) | 25 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | SOT-28FL/ECH8 | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 250V 3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 26W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK/TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,096 |
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MOSFET (Metal Oxide) | 250V | 3A (Ta) | 10V | 4.5V @ 1mA | 4.2nC @ 10V | 210pF @ 20V | ±30V | - | 1W (Ta), 26W (Tc) | 2.4 Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 250V 3A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 26W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK/TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,376 |
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MOSFET (Metal Oxide) | 250V | 3A (Ta) | 10V | 4.5V @ 1mA | 4.2nC @ 10V | 210pF @ 20V | ±30V | - | 1W (Ta), 26W (Tc) | 2.4 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET P-CH 20V 8.2A UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (2x2)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock6,944 |
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MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | - | 18 mOhm @ 7A, 4.5V | - | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 8.2A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (2x2)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock5,904 |
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MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | 700mW (Ta) | 18 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 8SOFL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 20.8W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock6,816 |
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MOSFET (Metal Oxide) | 30V | 7.9A (Ta), 38A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 8nC @ 4.5V | 913pF @ 15V | ±20V | - | 920mW (Ta), 20.8W (Tc) | 7.3 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 8SOFL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 20.8W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock7,344 |
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MOSFET (Metal Oxide) | 30V | 7.9A (Ta), 38A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 8nC @ 4.5V | 913pF @ 15V | ±20V | - | 920mW (Ta), 20.8W (Tc) | 7.3 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET P-CH 20V 3A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock3,552 |
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MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | 950pF @ 10V | ±8V | - | 600mW (Ta) | 62 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET N-CH 30V 1.2A 6UDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-UFDFN Exposed Pad
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Package: 6-UFDFN Exposed Pad |
Stock111,420 |
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MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 95pF @ 15V | ±8V | Schottky Diode (Isolated) | 500mW (Ta) | 200 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-UFDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock8,100 |
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MOSFET (Metal Oxide) | 30V | - | - | - | - | 1252pF @ 15V | - | - | 760mW (Ta) | - | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock13,680 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 52A (Tc) | - | 2.1V @ 250µA | 1.9nC @ 4.5V | 1252pF @ 15V | - | - | 760mW (Ta) | 5.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET P-CH 12V 2.35A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 5V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
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Package: SOT-23-6 |
Stock861,036 |
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MOSFET (Metal Oxide) | 12V | 2.35A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 550pF @ 5V | ±8V | - | 500mW (Ta) | 75 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 9.4A IPAK TRIMME
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock10,080 |
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MOSFET (Metal Oxide) | 30V | 9.4A (Ta), 41A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 16.5nC @ 10V | 837pF @ 15V | ±20V | - | 1.38W (Ta), 26.3W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET P-CH 30V 2.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 770mW (Ta)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,255,200 |
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MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 4.2nC @ 4.5V | 360pF @ 10V | ±20V | Schottky Diode (Isolated) | 770mW (Ta) | 95 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 23A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock72,012 |
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MOSFET (Metal Oxide) | 30V | 4.5A (Ta), 23A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 5.5nC @ 4.5V | 476pF @ 15V | ±20V | - | 790mW (Ta), 20.2W (Tc) | 23 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 44A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock2,944 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 44A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.3nC @ 10V | 1004pF @ 15V | ±20V | - | 920mW (Ta), 21.6W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |