Page 24 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTLUS3A39PZTAG
ON Semiconductor

MOSFET P-CH 20V 5.2A 6UDFN

Package: 6-PowerUFDFN

Stock4,224
NTMFS4C03NT3G
ON Semiconductor

MOSFET N-CH 30V 30A SO8FL

Package: 8-PowerTDFN

Stock6,736
NTMFS4C054NT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,544
NDDP010N25AZ-1H
ON Semiconductor

MOSFET N-CH 250V 10A IPAK/TP

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,792
NVMFS5C682NLWFAFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,688
NVMFS5C682NLWFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN

Stock4,528
NVF3055-100T1G
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

Package: TO-261-4, TO-261AA

Stock7,856
NTMFS4C022NT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,840
NTMFS5C673NLT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN

Stock3,584
NTTFS5CS73NLTWG
ON Semiconductor

T6 60V NCH LL IN U8FL

Package: -

Stock3,728
NTTFS5C673NLTWG
ON Semiconductor

MOSFET N-CH 60V 13A 8WDFN

Package: 8-PowerWDFN

Stock2,768
NVTFS4823NTAG
ON Semiconductor

MOSFET N-CH 30V 13A 8WDFN

Package: 8-PowerWDFN

Stock2,448
NVMFS5C682NLAFT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,144
NVMFS5C682NLT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN

Stock3,408
NVTFS4C10NTAG
ON Semiconductor

MOSFET N-CH 30V 44A U8FL

Package: 8-PowerWDFN

Stock2,816
NTTFS4985NFTAG
ON Semiconductor

MOSFET N-CH 30V 16.3A 8-WDFN

Package: 8-PowerWDFN

Stock50,508
NVATS4A101PZT4G
ON Semiconductor

MOSFET P-CH 30V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,520
ECH8309-TL-H
ON Semiconductor

MOSFET P-CH 12V 9.5A ECH8

Package: 8-SMD, Flat Lead

Stock2,384
NTMFS4937NCT3G
ON Semiconductor

MOSFET N-CH 30V 70A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,288
NTMFS4937NCT1G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,616

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTLUS3A39PZTAG	ON Semiconductor	MOSFET P-CH 20V 5.2A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock4,224	MOSFET (Metal Oxide)	20V	3.4A (Ta)	1.5V, 4.5V	1V @ 250µA	10.4nC @ 4.5V	920pF @ 15V	±8V	-	600mW (Ta)	39 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
NTMFS4C03NT3G	ON Semiconductor	MOSFET N-CH 30V 30A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,736	MOSFET (Metal Oxide)	30V	30A (Ta), 136A (Tc)	4.5V, 10V	2.2V @ 250µA	45.2nC @ 10V	3071pF @ 15V	±20V	-	3.1W (Ta), 64W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C054NT1G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.59W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 2.54 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,544	MOSFET (Metal Oxide)	30V	22.5A (Ta), 80A (Tc)	4.5V, 10V	2.2V @ 250µA	32.5nC @ 10V	2300pF @ 15V	±20V	-	2.59W (Ta), 33W (Tc)	2.54 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NDDP010N25AZ-1H	ON Semiconductor	MOSFET N-CH 250V 10A IPAK/TP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,792	MOSFET (Metal Oxide)	250V	10A (Ta)	10V	4.5V @ 1mA	16nC @ 10V	980pF @ 20V	±30V	-	1W (Ta), 52W (Tc)	420 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
NVMFS5C682NLWFAFT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,688	MOSFET (Metal Oxide)	60V	8.8A (Ta), 25A (Tc)	4.5V, 10V	2V @ 16µA	5nC @ 10V	410pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	21 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C682NLWFT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,528	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 16µA	5nC @ 10V	410pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	21 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVF3055-100T1G	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,856	MOSFET (Metal Oxide)	60V	3A (Ta)	10V	4V @ 250µA	22nC @ 10V	455pF @ 25V	±20V	-	1.3W (Ta)	110 mOhm @ 1.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTMFS4C022NT3G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,840	MOSFET (Metal Oxide)	30V	30A (Ta), 136A (Tc)	4.5V, 10V	2.2V @ 250µA	45.2nC @ 10V	3071pF @ 15V	±20V	-	3.1W (Ta), 64W (Tc)	1.7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS5C673NLT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,584	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 35µA	9.5nC @ 10V	880pF @ 25V	±20V	-	3.6W (Ta), 46W (Tc)	9.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTTFS5CS73NLTWG	ON Semiconductor	T6 60V NCH LL IN U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTTFS5C673NLTWG	ON Semiconductor	MOSFET N-CH 60V 13A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,768	MOSFET (Metal Oxide)	60V	13A (Ta), 50A (Tc)	4.5V, 10V	2V @ 35µA	4.5nC @ 4.5V	880pF @ 25V	±20V	-	3.1W (Ta), 46W (Tc)	9.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVTFS4823NTAG	ON Semiconductor	MOSFET N-CH 30V 13A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,448	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 4.5V	750pF @ 12V	±20V	-	3.1W (Ta), 21W (Tc)	10.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVMFS5C682NLAFT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,144	MOSFET (Metal Oxide)	60V	8.8A (Ta), 25A (Tc)	4.5V, 10V	2V @ 16µA	5nC @ 10V	410pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	21 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C682NLT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,408	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 16µA	5nC @ 10V	410pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	21 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVTFS4C10NTAG	ON Semiconductor	MOSFET N-CH 30V 44A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 993pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,816	MOSFET (Metal Oxide)	30V	15.3A (Ta), 47A (Tc)	4.5V, 10V	2.2V @ 250µA	19.3nC @ 10V	993pF @ 15V	±20V	-	3W (Ta), 28W (Tc)	7.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS4985NFTAG	ON Semiconductor	MOSFET N-CH 30V 16.3A 8-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.47W (Ta), 22.73W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock50,508	MOSFET (Metal Oxide)	30V	16.3A (Ta), 64A (Tc)	4.5V, 10V	2.3V @ 250µA	29.4nC @ 10V	2075pF @ 15V	±20V	-	1.47W (Ta), 22.73W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVATS4A101PZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,520	MOSFET (Metal Oxide)	30V	27A (Ta)	4.5V, 10V	2.6V @ 1mA	18.5nC @ 10V	875pF @ 10V	±20V	-	36W (Tc)	30 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	ATPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
ECH8309-TL-H	ON Semiconductor	MOSFET P-CH 12V 9.5A ECH8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ECH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,384	MOSFET (Metal Oxide)	12V	9.5A (Ta)	1.8V, 4.5V	-	18nC @ 4.5V	1780pF @ 6V	±10V	-	1.5W (Ta)	16 mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	8-ECH	8-SMD, Flat Lead
NTMFS4937NCT3G	ON Semiconductor	MOSFET N-CH 30V 70A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2516pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,288	MOSFET (Metal Oxide)	30V	10.2A (Ta)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	2516pF @ 15V	±20V	-	-	4 mOhm @ 30A, 10V	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4937NCT1G	ON Semiconductor	MOSFET N-CH 30V 10.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2516pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,616	MOSFET (Metal Oxide)	30V	10.2A (Ta)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	2516pF @ 15V	±20V	-	-	4 mOhm @ 30A, 10V	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NDF05N50ZH	ON Semiconductor	MOSFET N-CH 500V 5.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock36,132	MOSFET (Metal Oxide)	500V	5.5A (Tc)	10V	4.5V @ 50µA	28nC @ 10V	632pF @ 25V	±30V	-	30W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
ATP202-TL-H	ON Semiconductor	MOSFET N-CH 30V 50A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock4,784	MOSFET (Metal Oxide)	30V	50A (Ta)	4.5V, 10V	-	27nC @ 10V	1650pF @ 10V	±20V	-	40W (Tc)	12 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
NTTFS4C53NTWG	ON Semiconductor	MOSFET N-CH 30V 35A U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,264	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
ECH8410-TL-H	ON Semiconductor	MOSFET N-CH 30V 12A ECH8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ECH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock36,000	MOSFET (Metal Oxide)	30V	12A (Ta)	4V, 10V	-	31nC @ 10V	1700pF @ 10V	±20V	-	1.6W (Ta)	10 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	8-ECH	8-SMD, Flat Lead
NVMFS4C05NT3G	ON Semiconductor	MOSFET N-CH 30V 116A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.61W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,832	MOSFET (Metal Oxide)	30V	24.7A (Ta), 116A (Tc)	4.5V, 10V	2.2V @ 250µA	30nC @ 10V	1972pF @ 15V	±20V	-	3.61W (Ta), 79W (Tc)	3.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SFT1341-W	ON Semiconductor	MOSFET P-CH 40V 10A TP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,912	MOSFET (Metal Oxide)	40V	10A (Ta)	1.8V, 4.5V	-	8nC @ 4.5V	650pF @ 20V	±10V	-	1W (Ta), 15W (Tc)	112 mOhm @ 5A, 4.5V	150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
NVLUS4C12NTAG	ON Semiconductor	MOSFET N-CH 30V 10.7A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,176	MOSFET (Metal Oxide)	30V	6.8A (Ta)	3.3V, 10V	2.1V @ 250µA	18nC @ 10V	1172pF @ 15V	±20V	-	630mW (Ta)	9 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
NTD4805NT4G	ON Semiconductor	MOSFET N-CH 30V 12.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.41W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,240	MOSFET (Metal Oxide)	30V	12.7A (Ta), 95A (Tc)	4.5V, 11.5V	2.5V @ 250µA	48nC @ 11.5V	2865pF @ 12V	±20V	-	1.41W (Ta), 79W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63