Page 31 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NVATS5A113PLZT4G
ON Semiconductor

MOSFET P-CH 30V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,064
NVATS5A107PLZT4G
ON Semiconductor

MOSFET P-CH 30V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,808
NVATS4A103PZT4G
ON Semiconductor

MOSFET P-CH 30V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,176
NVMFS5C456NLWFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock3,328
NVD5484NLT4G-VF01
ON Semiconductor

MOSFET N-CH 60V 54A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,760
NTMFS4834NT1G
ON Semiconductor

MOSFET N-CH 30V 13A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock18,456
NVMFS5833NT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock3,968
NTMFS4C56NT1G
ON Semiconductor

MOSFET N-CH 30V 69A SO8FL

Package: 8-PowerTDFN

Stock7,312
NVMFS5C670NLWFT3G
ON Semiconductor

MOSFET N-CH 60V 71A SO8FL

Package: 8-PowerTDFN

Stock3,696
NTMFS5C442NLT1G
ON Semiconductor

MOSFET N-CH 40V 25A SO8FL

Package: 8-PowerTDFN

Stock7,744
NVMFS5C450NLT3G
ON Semiconductor

MOSFET N-CH 40V 110A SO8FL

Package: 8-PowerTDFN

Stock3,600
NTTFS4C55NTWG
ON Semiconductor

MOSFET N-CH 30V 75A U8FL

Package: 8-PowerWDFN

Stock7,312
NVMFS5C670NLAFT1G
ON Semiconductor

MOSFET N-CH 60V DFN5

Package: -

Stock6,272
NVMFS5C670NLT1G
ON Semiconductor

MOSFET N-CH 60V 71A SO8FL

Package: 8-PowerTDFN

Stock7,504
ATP113-TL-H
ON Semiconductor

MOSFET P-CH 60V 35A ATPAK

Package: ATPAK (2 leads+tab)

Stock5,152
NVD4804NT4G-VF01
ON Semiconductor

MOSFET N-CH 30V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,080
NTTFS4985NFTWG
ON Semiconductor

MOSFET N-CH 30V 64A U8FL

Package: 8-PowerWDFN

Stock6,080
NVMFS5C442NLAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,904
NVMFS5C442NLT3G
ON Semiconductor

MOSFET N-CH 40V 27A SO8FL

Package: 8-PowerTDFN

Stock6,032
NVMFS6B75NLWFT1G
ON Semiconductor

MOSFET N-CH 100V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,560

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NVATS5A113PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 29.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,064	MOSFET (Metal Oxide)	60V	38A (Ta)	4V, 10V	2.6V @ 1mA	55nC @ 10V	2400pF @ 20V	±20V	-	60W (Tc)	29.5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	ATPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVATS5A107PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,808	MOSFET (Metal Oxide)	40V	55A (Ta)	4.5V, 10V	2.6V @ 1mA	47nC @ 10V	2400pF @ 20V	±20V	-	60W (Tc)	17 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	ATPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVATS4A103PZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,176	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	2.6V @ 1mA	47nC @ 10V	2430pF @ 10V	±20V	-	60W (Tc)	13 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	ATPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C456NLWFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,328	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	18nC @ 10V	1600pF @ 25V	±20V	-	3.6W (Ta), 55W (Tc)	3.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVD5484NLT4G-VF01	ON Semiconductor	MOSFET N-CH 60V 54A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,760	MOSFET (Metal Oxide)	60V	10.7A (Ta), 54A (Tc)	4.5V, 10V	2.5V @ 250µA	48nC @ 10V	1410pF @ 25V	±20V	-	3.9W (Ta), 100W (Tc)	17 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4834NT1G	ON Semiconductor	MOSFET N-CH 30V 13A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock18,456	MOSFET (Metal Oxide)	30V	13A (Ta), 130A (Tc)	4.5V, 11.5V	2.5V @ 250µA	48nC @ 4.5V	4500pF @ 12V	±20V	-	900mW (Ta), 86.2W (Tc)	3 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5833NT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1714pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,968	MOSFET (Metal Oxide)	40V	16A (Ta)	10V	3.5V @ 250µA	32.5nC @ 10V	1714pF @ 25V	±20V	-	3.7W (Ta), 112W (Tc)	7.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C56NT1G	ON Semiconductor	MOSFET N-CH 30V 69A SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,312	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5C670NLWFT3G	ON Semiconductor	MOSFET N-CH 60V 71A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,696	MOSFET (Metal Oxide)	60V	17A (Ta), 71A (Tc)	4.5V, 10V	2V @ 250µA	20nC @ 10V	1400pF @ 25V	±20V	-	3.6W (Ta), 61W (Tc)	6.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS5C442NLT1G	ON Semiconductor	MOSFET N-CH 40V 25A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,744	MOSFET (Metal Oxide)	40V	27A (Ta), 130A (Tc)	4.5V, 10V	2V @ 250µA	50nC @ 10V	3100pF @ 25V	±20V	-	3.1W (Ta), 69W (Tc)	2.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5C450NLT3G	ON Semiconductor	MOSFET N-CH 40V 110A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,600	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	35nC @ 10V	2100pF @ 20V	±20V	-	3.7W (Ta), 68W (Tc)	2.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTTFS4C55NTWG	ON Semiconductor	MOSFET N-CH 30V 75A U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,312	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVMFS5C670NLAFT1G	ON Semiconductor	MOSFET N-CH 60V DFN5 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,272	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS5C670NLT1G	ON Semiconductor	MOSFET N-CH 60V 71A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,504	MOSFET (Metal Oxide)	60V	17A (Ta), 71A (Tc)	4.5V, 10V	2V @ 250µA	20nC @ 10V	1400pF @ 25V	±20V	-	3.6W (Ta), 61W (Tc)	6.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
ATP113-TL-H	ON Semiconductor	MOSFET P-CH 60V 35A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 29.5 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock5,152	MOSFET (Metal Oxide)	60V	35A (Ta)	4V, 10V	-	55nC @ 10V	2400pF @ 20V	±20V	-	50W (Tc)	29.5 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
NVD4804NT4G-VF01	ON Semiconductor	MOSFET N-CH 30V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,080	MOSFET (Metal Oxide)	30V	14.5A (Ta), 124A (Tc)	4.5V, 11.5V	2.5V @ 250µA	40nC @ 4.5V	4490pF @ 12V	±20V	-	1.43W (Ta), 107W (Tc)	4 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFS4985NFTWG	ON Semiconductor	MOSFET N-CH 30V 64A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.47W (Ta), 22.73W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,080	MOSFET (Metal Oxide)	30V	16.3A (Ta), 64A (Tc)	4.5V, 10V	2.3V @ 250µA	29.4nC @ 10V	2075pF @ 15V	±20V	-	1.47W (Ta), 22.73W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVMFS5C442NLAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,904	MOSFET (Metal Oxide)	40V	29A (Ta), 130A (Tc)	4.5V, 10V	2V @ 250µA	50nC @ 10V	3100pF @ 25V	±20V	-	3.7W (Ta), 83W (Tc)	2.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C442NLT3G	ON Semiconductor	MOSFET N-CH 40V 27A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 127A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,032	MOSFET (Metal Oxide)	40V	27A (Ta), 127A (Tc)	4.5V, 10V	2V @ 250µA	50nC @ 10V	3100pF @ 25V	±20V	-	3.7W (Ta), 83W (Tc)	2.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B75NLWFT1G	ON Semiconductor	MOSFET N-CH 100V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,560	MOSFET (Metal Oxide)	100V	7A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	11.3nC @ 10V	740pF @ 25V	±16V	-	3.5W (Ta), 56W (Tc)	30 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4899NFT1G	ON Semiconductor	MOSFET N-CH 30V SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock12,024	MOSFET (Metal Oxide)	30V	10.4A (Ta), 75A (Tc)	4.5V, 10V	2.5V @ 1mA	25nC @ 10V	1600pF @ 12V	±20V	-	920mW (Ta), 48W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVTFS5116PLTWG	ON Semiconductor	MOSFET P-CH 60V 14A 8WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,096	MOSFET (Metal Oxide)	60V	6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1258pF @ 25V	±20V	-	3.2W (Ta), 21W (Tc)	52 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVD6414ANT4G-VF01	ON Semiconductor	MOSFET N-CH 100V 34A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,800	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 250µA	40nC @ 10V	1450pF @ 25V	±20V	-	100W (Tc)	37 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS4C03NWFT1G	ON Semiconductor	MOSFET N-CH 30V 31.4A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.71W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,848	MOSFET (Metal Oxide)	30V	31.4A (Ta), 143A (Tc)	4.5V, 10V	2.2V @ 250µA	45.2nC @ 10V	3071pF @ 15V	±20V	-	3.71W (Ta), 77W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NDD60N900U1T4G	ON Semiconductor	MOSFET N-CH 600V 5.9A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,640	MOSFET (Metal Oxide)	600V	5.7A (Tc)	10V	4V @ 250µA	12nC @ 10V	360pF @ 50V	±25V	-	74W (Tc)	900 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C460NLWFAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,360	MOSFET (Metal Oxide)	40V	21A (Ta), 78A (Tc)	4.5V, 10V	2V @ 250µA	23nC @ 10V	1300pF @ 25V	±20V	-	3.6W (Ta), 50W (Tc)	4.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C460NLWFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,312	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	23nC @ 10V	1300pF @ 25V	±20V	-	3.6W (Ta), 50W (Tc)	4.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C58NT1G	ON Semiconductor	MOSFET N-CH 30V 52A SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,552	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN