Page 36 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NVMFS5C430NWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,848
NVMFS5C430NWFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock5,264
2SK3816-DL-1E
ON Semiconductor

MOSFET N-CH 60V 40A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,128
NVMFS5C426NWFAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,296
NVMFS5C426NWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock3,008
NDBA100N10BT4H
ON Semiconductor

MOSFET N-CH 100V 100A DPAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,376
NTB5405NT4G
ON Semiconductor

MOSFET N-CH 40V 116A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock43,320
NVMFS5C430NLAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,312
NVMFS5C430NLT1G
ON Semiconductor

MOSFET N-CH 40V 200A SO8FL

Package: 8-PowerTDFN

Stock5,056
NVMFS5C628NLWFAFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,648
NVMFS5C628NLWFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN

Stock5,856
NDD60N550U1-35G
ON Semiconductor

MOSFET N-CH 600V 8.2A IPAK-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,904
NDD60N550U1-1G
ON Semiconductor

MOSFET N-CH 600V 8.2A IPAK-4

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,616
NDPL100N10BG
ON Semiconductor

MOSFET N-CH 100V 100A TO220

Package: TO-220-3

Stock2,192
NVB6412ANT4G
ON Semiconductor

MOSFET N-CH 100V 59A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,704
NTMFS5C430NT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,760
NVMFS5C430NLWFAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,472
NVMFS5C430NLWFT3G
ON Semiconductor

MOSFET N-CH 40V 200A SO8FL

Package: 8-PowerTDFN

Stock3,680
NVMFS5C430NAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,088
NVMFS5C430NT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock6,544

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NVMFS5C430NWFAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,848	MOSFET (Metal Oxide)	40V	35A (Ta), 185A (Tc)	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C430NWFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,264	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
2SK3816-DL-1E	ON Semiconductor	MOSFET N-CH 60V 40A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,128	MOSFET (Metal Oxide)	60V	40A (Ta)	4V, 10V	-	40nC @ 10V	1780pF @ 20V	±20V	-	1.65W (Ta), 50W (Tc)	26 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C426NWFAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,296	MOSFET (Metal Oxide)	40V	41A (Ta), 235A (Tc)	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C426NWFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,008	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NDBA100N10BT4H	ON Semiconductor	MOSFET N-CH 100V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 50A, 15V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,376	MOSFET (Metal Oxide)	100V	100A (Ta)	10V, 15V	4V @ 1mA	35nC @ 10V	2950pF @ 50V	±20V	-	110W (Tc)	6.9 mOhm @ 50A, 15V	175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB5405NT4G	ON Semiconductor	MOSFET N-CH 40V 116A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock43,320	MOSFET (Metal Oxide)	40V	116A (Tc)	5V, 10V	3.5V @ 250µA	88nC @ 10V	4000pF @ 32V	±20V	-	3W (Ta), 150W (Tc)	5.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C430NLAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,312	MOSFET (Metal Oxide)	40V	38A (Ta), 200A (Tc)	4.5V, 10V	2V @ 250µA	70nC @ 10V	4300pF @ 20V	±20V	-	3.8W (Ta), 110W (Tc)	1.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C430NLT1G	ON Semiconductor	MOSFET N-CH 40V 200A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,056	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	70nC @ 10V	4300pF @ 20V	±20V	-	3.8W (Ta), 110W (Tc)	1.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5C628NLWFAFT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,648	MOSFET (Metal Oxide)	60V	28A (Ta), 150A (Tc)	4.5V, 10V	2V @ 135µA	52nC @ 10V	3600pF @ 25V	±20V	-	3.7W (Ta), 110W (Tc)	2.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C628NLWFT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,856	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 135µA	52nC @ 10V	3600pF @ 25V	±20V	-	3.7W (Ta), 110W (Tc)	2.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NDD60N550U1-35G	ON Semiconductor	MOSFET N-CH 600V 8.2A IPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,904	MOSFET (Metal Oxide)	600V	8.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	540pF @ 50V	±25V	-	94W (Tc)	550 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
NDD60N550U1-1G	ON Semiconductor	MOSFET N-CH 600V 8.2A IPAK-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,616	MOSFET (Metal Oxide)	600V	8.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	540pF @ 50V	±25V	-	94W (Tc)	550 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
NDPL100N10BG	ON Semiconductor	MOSFET N-CH 100V 100A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 15V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,192	MOSFET (Metal Oxide)	100V	100A (Ta)	10V, 15V	4V @ 1mA	35nC @ 10V	2950pF @ 50V	±20V	-	2.1W (Ta), 110W (Tc)	7.2 mOhm @ 50A, 15V	175°C (TJ)	Through Hole	TO-220-3	TO-220-3
NVB6412ANT4G	ON Semiconductor	MOSFET N-CH 100V 59A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 18.2 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,704	MOSFET (Metal Oxide)	100V	58A (Tc)	10V	4V @ 250µA	100nC @ 10V	3500pF @ 25V	±20V	-	167W (Tc)	18.2 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS5C430NT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,760	MOSFET (Metal Oxide)	40V	35A (Ta), 185A (Tc)	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C430NLWFAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,472	MOSFET (Metal Oxide)	40V	38A (Ta), 200A (Tc)	4.5V, 10V	2V @ 250µA	70nC @ 10V	4300pF @ 20V	±20V	-	3.8W (Ta), 110W (Tc)	1.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C430NLWFT3G	ON Semiconductor	MOSFET N-CH 40V 200A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,680	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	70nC @ 10V	4300pF @ 20V	±20V	-	3.8W (Ta), 110W (Tc)	1.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5C430NAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,088	MOSFET (Metal Oxide)	40V	35A (Ta), 185A (Tc)	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C430NT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,544	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NDD60N360U1T4G	ON Semiconductor	MOSFET N-CH 600V 114A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,304	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	26nC @ 10V	790pF @ 50V	±25V	-	114W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C426NAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,840	MOSFET (Metal Oxide)	40V	41A (Ta), 235A (Tc)	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C426NT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,952	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTP4813NLG	ON Semiconductor	MOSFET N-CH 30V 40A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 13.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,568	MOSFET (Metal Oxide)	30V	10.2A (Ta)	4.5V, 10V	2.5V @ 250µA	17nC @ 11.5V	895pF @ 12V	±20V	-	2.4W (Ta), 60W (Tc)	13.1 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS5C430NWFAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,192	MOSFET (Metal Oxide)	40V	35A (Ta), 185A (Tc)	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C430NWFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,808	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS5C430NLT1G	ON Semiconductor	MOSFET N-CH 40V 200A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock144,000	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	70nC @ 10V	4300pF @ 20V	±20V	-	3.8W (Ta), 110W (Tc)	1.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVD5890NT4G-VF01	ON Semiconductor	MOSFET N-CH 40V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,072	MOSFET (Metal Oxide)	40V	24A (Ta), 123A (Tc)	10V	3.5V @ 250µA	100nC @ 10V	4760pF @ 25V	±20V	-	4W (Ta), 107W (Tc)	3.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63