Page 43 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTP85N03
ON Semiconductor

MOSFET N-CH 28V 85A TO220AB

Package: TO-220-3

Stock3,056
NTB75N03R
ON Semiconductor

MOSFET N-CH 25V 9.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,768
NTP75N03R
ON Semiconductor

MOSFET N-CH 25V 9.7A TO220AB

Package: TO-220-3

Stock60,612
NTP65N02R
ON Semiconductor

MOSFET N-CH 25V 7.6A TO220AB

Package: TO-220-3

Stock486,000
MMSF3P02HDR2
ON Semiconductor

MOSFET P-CH 20V 5.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,000
MTD5P06VT4
ON Semiconductor

MOSFET P-CH 60V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock83,256
MTD10N10ELT4
ON Semiconductor

MOSFET N-CH 100V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock79,692
MGSF1P02LT1
ON Semiconductor

MOSFET P-CH 20V 750MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,873,728
MGSF1N02LT1
ON Semiconductor

MOSFET N-CH 20V 750MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock132,684
BS170RLRA
ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,384
VN0300L
ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock42,036
MTW32N20E
ON Semiconductor

MOSFET N-CH 200V 32A TO-247

Package: TO-247-3

Stock3,744
MTP6P20E
ON Semiconductor

MOSFET P-CH 200V 6A TO-220AB

Package: TO-220-3

Stock24,024
MTP50P03HDL
ON Semiconductor

MOSFET P-CH 30V 50A TO-220AB

Package: TO-220-3

Stock6,320
MTP36N06V
ON Semiconductor

MOSFET N-CH 60V 32A TO-220AB

Package: TO-220-3

Stock417,888
MTP2955V
ON Semiconductor

MOSFET P-CH 60V 12A TO-220AB

Package: TO-220-3

Stock153,984
MTD6P10E
ON Semiconductor

MOSFET P-CH 100V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock53,280
MTP23P06V
ON Semiconductor

MOSFET P-CH 60V 23A TO-220AB

Package: TO-220-3

Stock429,780
MTP2P50E
ON Semiconductor

MOSFET P-CH 500V 2A TO-220AB

Package: TO-220-3

Stock2,000
VN2222LL
ON Semiconductor

MOSFET N-CH 60V 150MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock360,120

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTP85N03	ON Semiconductor	MOSFET N-CH 28V 85A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,056	MOSFET (Metal Oxide)	28V	85A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2150pF @ 24V	±20V	-	80W (Tc)	6.8 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTB75N03R	ON Semiconductor	MOSFET N-CH 25V 9.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,768	MOSFET (Metal Oxide)	25V	9.7A (Ta), 75A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 10V	1333pF @ 20V	±20V	-	1.25W (Ta), 74.4W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTP75N03R	ON Semiconductor	MOSFET N-CH 25V 9.7A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,612	MOSFET (Metal Oxide)	25V	9.7A (Ta)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.25W (Ta), 74.4W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP65N02R	ON Semiconductor	MOSFET N-CH 25V 7.6A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock486,000	MOSFET (Metal Oxide)	25V	7.6A (Ta), 58A (Tc)	4.5V, 10V	2V @ 250µA	9.5nC @ 4.5V	1330pF @ 20V	±20V	-	1.04W (Ta), 62.5W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MMSF3P02HDR2	ON Semiconductor	MOSFET P-CH 20V 5.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,000	MOSFET (Metal Oxide)	20V	5.6A (Ta)	4.5V, 10V	2V @ 250µA	46nC @ 10V	1400pF @ 16V	±20V	-	2.5W (Ta)	75 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
MTD5P06VT4	ON Semiconductor	MOSFET P-CH 60V 5A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock83,256	MOSFET (Metal Oxide)	60V	5A (Tc)	10V	4V @ 250µA	20nC @ 10V	510pF @ 25V	±15V	-	2.1W (Ta), 40W (Tc)	450 mOhm @ 2.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
MTD10N10ELT4	ON Semiconductor	MOSFET N-CH 100V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock79,692	MOSFET (Metal Oxide)	100V	10A (Tc)	5V	2V @ 250µA	15nC @ 5V	1040pF @ 25V	±15V	-	1.75W (Ta), 40W (Tc)	220 mOhm @ 5A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
MGSF1P02LT1	ON Semiconductor	MOSFET P-CH 20V 750MA SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,873,728	MOSFET (Metal Oxide)	20V	750mA (Ta)	4.5V, 10V	2.4V @ 250µA	-	130pF @ 5V	±20V	-	400mW (Ta)	350 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MGSF1N02LT1	ON Semiconductor	MOSFET N-CH 20V 750MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock132,684	MOSFET (Metal Oxide)	20V	750mA (Ta)	4.5V, 10V	2.4V @ 250µA	-	125pF @ 5V	±20V	-	400mW (Ta)	90 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BS170RLRA	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,384	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN0300L	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock42,036	MOSFET (Metal Oxide)	60V	200mA (Ta)	5V, 10V	2.5V @ 1mA	-	100pF @ 15V	±20V	-	350mW (Tc)	1.2 Ohm @ 1A, 10V	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
MTW32N20E	ON Semiconductor	MOSFET N-CH 200V 32A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,744	MOSFET (Metal Oxide)	200V	32A (Tc)	10V	4V @ 250µA	120nC @ 10V	5000pF @ 25V	±20V	-	180W (Tc)	75 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
MTP6P20E	ON Semiconductor	MOSFET P-CH 200V 6A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock24,024	MOSFET (Metal Oxide)	200V	6A (Tc)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	75W (Tc)	1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP50P03HDL	ON Semiconductor	MOSFET P-CH 30V 50A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,320	MOSFET (Metal Oxide)	30V	50A (Tc)	5V	2V @ 250µA	100nC @ 5V	4900pF @ 25V	±15V	-	125W (Tc)	25 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP36N06V	ON Semiconductor	MOSFET N-CH 60V 32A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock417,888	MOSFET (Metal Oxide)	60V	32A (Tc)	10V	4V @ 250µA	50nC @ 10V	1700pF @ 25V	±20V	-	90W (Tc)	40 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP2955V	ON Semiconductor	MOSFET P-CH 60V 12A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock153,984	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	770pF @ 25V	±15V	-	60W (Tc)	230 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTD6P10E	ON Semiconductor	MOSFET P-CH 100V 6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock53,280	MOSFET (Metal Oxide)	100V	6A (Tc)	10V	4V @ 250µA	22nC @ 10V	840pF @ 25V	±15V	-	1.75W (Ta), 50W (Tc)	660 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
MTP23P06V	ON Semiconductor	MOSFET P-CH 60V 23A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock429,780	MOSFET (Metal Oxide)	60V	23A (Tc)	10V	4V @ 250µA	50nC @ 10V	1620pF @ 25V	±15V	-	90W (Tc)	120 mOhm @ 11.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP2P50E	ON Semiconductor	MOSFET P-CH 500V 2A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,000	MOSFET (Metal Oxide)	500V	2A (Tc)	10V	4V @ 250µA	27nC @ 10V	1183pF @ 25V	±20V	-	75W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
VN2222LL	ON Semiconductor	MOSFET N-CH 60V 150MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock360,120	MOSFET (Metal Oxide)	60V	150mA (Ta)	10V	2.5V @ 1mA	-	60pF @ 25V	±20V	-	400mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
NTD80N02T4	ON Semiconductor	MOSFET N-CH 24V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock340,980	MOSFET (Metal Oxide)	24V	80A (Tc)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	2600pF @ 20V	±20V	-	75W (Tc)	5.8 mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMS10P02R2	ON Semiconductor	MOSFET P-CH 20V 8.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock423,420	MOSFET (Metal Oxide)	20V	8.8A (Ta)	2.5V, 4.5V	1.2V @ 250µA	70nC @ 4.5V	3640pF @ 16V	±12V	-	1.6W (Ta)	14 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTD12N10T4	ON Semiconductor	MOSFET N-CH 100V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,940	MOSFET (Metal Oxide)	100V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	550pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	165 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTF3055-100T1	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock36,000	MOSFET (Metal Oxide)	60V	3A (Ta)	10V	4V @ 250µA	22nC @ 10V	455pF @ 25V	±20V	-	1.3W (Ta)	110 mOhm @ 1.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NTGS3446T1	ON Semiconductor	MOSFET N-CH 20V 2.5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock25,092	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	15nC @ 4.5V	750pF @ 10V	±12V	-	500mW (Ta)	45 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
2N7000RLRA	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock68,160	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
MMBF170LT1	ON Semiconductor	MOSFET N-CH 60V 500MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock780,864	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	225mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTP75N06	ON Semiconductor	MOSFET N-CH 60V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	60V	75A (Ta)	10V	4V @ 250µA	130nC @ 10V	4510pF @ 25V	±20V	-	2.4W (Ta), 214W (Tj)	9.5 mOhm @ 37.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3