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ON Semiconductor |
MOSFET P-CH 20V 4.5A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock35,400 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 7.3nC @ 4.5V | 670pF @ 10V | ±10V | - | 1.5W (Ta) | 49 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 75V 100A SMP-FD
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock6,880 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH 30V 5A CPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,408 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH TO220-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,104 |
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- | - | - | 4V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,992 |
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- | - | - | 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock4,416 |
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- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,472 |
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- | - | - | 4V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock5,600 |
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- | - | - | 4V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock4,768 |
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- | - | - | 4V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 900V 6.5A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 3.25A, 10V
- Operating Temperature: 150°C (TA)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,256 |
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MOSFET (Metal Oxide) | 900V | 6.5A (Ta) | 10V | - | 44nC @ 10V | 850pF @ 30V | ±30V | - | 2W (Ta), 37W (Tc) | 2.7 Ohm @ 3.25A, 10V | 150°C (TA) | Through Hole | TO-220-3 Fullpack/TO-220F-3SG | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 74A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 74A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 37A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,656 |
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MOSFET (Metal Oxide) | 60V | 74A (Ta) | 4V, 10V | 2.6V @ 1mA | 135nC @ 10V | 6900pF @ 20V | ±20V | - | 2W (Ta), 35W (Tc) | 6.1 mOhm @ 37A, 10V | 150°C (TJ) | Through Hole | TO-220-3 Fullpack/TO-220F-3SG | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 17A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TA)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P-3L
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock7,040 |
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MOSFET (Metal Oxide) | 600V | 17A (Ta) | 10V | - | 46nC @ 10V | 1200pF @ 30V | ±30V | - | 2.5W (Ta), 170W (Tc) | 610 mOhm @ 7A, 10V | 150°C (TA) | Through Hole | TO-3P-3L | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock20,784 |
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MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | - | 23.5nC @ 10V | 600pF @ 30V | ±30V | - | 2W | 1.1 Ohm @ 3.5A, 10V | 150°C | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 100V 27A TO263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V
- Operating Temperature: 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,008 |
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MOSFET (Metal Oxide) | 100V | 27A (Ta) | 4V, 10V | - | 74nC @ 10V | 4200pF @ 20V | ±20V | - | 65W (Tc) | 77 mOhm @ 14A, 10V | 150°C (TA) | Surface Mount | TO-263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 40V 19A TP-FA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock60,252 |
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MOSFET (Metal Oxide) | 40V | 19A (Ta) | 4.5V, 10V | - | 12nC @ 10V | 590pF @ 20V | ±20V | - | 1W (Ta), 23W (Tc) | 59 mOhm @ 9.5A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 4A UDFN6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock2,368 |
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MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | 950pF @ 10V | ±8V | - | 600mW (Ta) | 62 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 20V 4A UDFN6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock4,752 |
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MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | 950pF @ 10V | ±8V | - | 600mW (Ta) | 62 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 20V 5.2A UDFN6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
|
Package: 6-PowerUFDFN |
Stock3,792 |
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MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | 920pF @ 15V | ±8V | - | 600mW (Ta) | 39 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 20V 5.2A UDFN6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
|
Package: 6-PowerUFDFN |
Stock7,664 |
|
MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | 920pF @ 15V | ±8V | - | 600mW (Ta) | 39 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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|
ON Semiconductor |
MOSFET N-CH 600V 0.4A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock13,020 |
|
MOSFET (Metal Oxide) | 600V | 400mA (Tc) | 10V | 3.7V @ 50µA | 7.2nC @ 10V | 160pF @ 25V | ±30V | - | 2.5W (Tc) | 8.5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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|
ON Semiconductor |
MOSFET P-CH 30V 0.1A SMCP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock2,025,612 |
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MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 1.5V, 4V | - | 1.43nC @ 10V | 7.5pF @ 10V | ±10V | - | 150mW (Ta) | 10.4 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
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|
ON Semiconductor |
MOSFET N-CH 500V 5.5A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,904 |
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MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | - | 14.6nC @ 10V | 360pF @ 30V | ±30V | - | 2W (Ta), 30W (Tc) | 1.56 Ohm @ 2.8A, 10V | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,504 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 52A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 18.2nC @ 10V | 1670pF @ 15V | ±20V | - | 760mW (Ta) | 5.8 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 8.2A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,456 |
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MOSFET (Metal Oxide) | 30V | 8.2A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18.6nC @ 10V | 987pF @ 15V | ±20V | - | 750mW (Ta) | 6.95 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,472 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 52A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | ±20V | - | 760mW (Ta) | 5.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 11A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 770mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,216 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta), 69A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 26nC @ 10V | 1683pF @ 15V | ±20V | - | 770mW (Ta) | 4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 11.9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 770mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,824 |
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MOSFET (Metal Oxide) | 30V | 11.9A (Ta), 78A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 14nC @ 4.5V | 1972pF @ 15V | ±20V | - | 770mW (Ta) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V SO8FL
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,552 |
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