Page 14 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RTR025N05HZGTL
Rohm Semiconductor

MOSFET N-CH 45V 2.5A TSMT3

Package: -

Stock18,762
RQ5E040RPTL
Rohm Semiconductor

MOSFET P-CH 30V 4A TSMT3

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Stock363
R8003KNXC7G
Rohm Semiconductor

800V 3A, TO-220FM, HIGH-SPEED SW

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Stock1,431
RD3H200SNTL1
Rohm Semiconductor

MOSFET N-CH 45V 20A TO252

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Stock8,853
R6020ENXC7G
Rohm Semiconductor

600V 20A TO-220FM, LOW-NOISE POW

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Stock2,868
R6030JNZC8
Rohm Semiconductor

MOSFET N-CH 600V 30A TO3PF

Package: -

Stock87
RSS060P05FRATB
Rohm Semiconductor

MOSFET P-CH 45V 6A 8SOP

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BSS138WT106
Rohm Semiconductor

NCH 60V 310MA, SOT-323, SMALL SI

Package: -

Stock5,874
SCT3105KLGC11
Rohm Semiconductor

SICFET N-CH 1200V 24A TO247N

Package: -

Stock453
RSS100N03FRATB
Rohm Semiconductor

MOSFET N-CH 30V 10A 8SOP

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Stock7,230
R8008ANJFRGTL
Rohm Semiconductor

MOSFET N-CH 800V 8A LPTS

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SCT3105KW7TL
Rohm Semiconductor

SICFET N-CH 1200V 23A TO263-7

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Stock5,745
RSS100N03HZGTB
Rohm Semiconductor

NCH 30V 10A AUTOMOTIVE POWER MOS

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Stock2,910
RD3G07BATTL1
Rohm Semiconductor

PCH -40V -70A POWER MOSFET - RD3

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Stock27,813
RQ5E035XNTCL
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT3

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Stock18,000
RSS060P05HZGTB
Rohm Semiconductor

PCH -45V -6A POWER MOSFET: RSS06

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Stock6,225
RD3L080SNTL1
Rohm Semiconductor

MOSFET N-CH 60V 8A TO252

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Stock126
RQ5H025TNTL
Rohm Semiconductor

MOSFET N-CH 45V 2.5A TSMT3

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Stock31,077
R6507END3TL1
Rohm Semiconductor

650V 7A TO-252, LOW-NOISE POWER

Package: -

Stock7,431
R6524KNZC8
Rohm Semiconductor

MOSFET N-CH 650V 24A TO3

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RTR025N05HZGTL	Rohm Semiconductor	MOSFET N-CH 45V 2.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock18,762	MOSFET (Metal Oxide)	45 V	2.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	3.2 nC @ 4.5 V	250 pF @ 10 V	±12V	-	700mW (Ta)	130mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ5E040RPTL	Rohm Semiconductor	MOSFET P-CH 30V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock363	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	2.5V @ 1mA	10.5 nC @ 5 V	1000 pF @ 10 V	±20V	-	700mW (Ta)	45mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
R8003KNXC7G	Rohm Semiconductor	800V 3A, TO-220FM, HIGH-SPEED SW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock1,431	MOSFET (Metal Oxide)	800 V	3A (Ta)	10V	4.5V @ 2mA	11.5 nC @ 10 V	300 pF @ 100 V	±20V	-	36W (Tc)	1.8Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
RD3H200SNTL1	Rohm Semiconductor	MOSFET N-CH 45V 20A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,853	MOSFET (Metal Oxide)	45 V	20A (Ta)	4V, 10V	2.5V @ 1mA	12 nC @ 5 V	950 pF @ 10 V	±20V	-	20W (Tc)	28mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6020ENXC7G	Rohm Semiconductor	600V 20A TO-220FM, LOW-NOISE POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,868	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4V @ 1mA	60 nC @ 10 V	1400 pF @ 25 V	±20V	-	68W (Tc)	196mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6030JNZC8	Rohm Semiconductor	MOSFET N-CH 600V 30A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock87	MOSFET (Metal Oxide)	600 V	30A (Tc)	15V	7V @ 5.5mA	74 nC @ 15 V	2500 pF @ 100 V	±30V	-	93W (Tc)	143mOhm @ 15A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
RSS060P05FRATB	Rohm Semiconductor	MOSFET P-CH 45V 6A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	45 V	6A (Ta)	4V, 10V	2.5V @ 1mA	32.2 nC @ 5 V	2700 pF @ 10 V	±20V	-	2W (Ta)	36mOhm @ 6A, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
BSS138WT106	Rohm Semiconductor	NCH 60V 310MA, SOT-323, SMALL SI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	Package: -	Stock5,874	MOSFET (Metal Oxide)	60 V	310mA (Ta)	2.5V, 10V	2.3V @ 1mA	-	15 pF @ 30 V	±20V	-	200mW (Ta)	2.4Ohm @ 310mA, 10V	150°C (TJ)	Surface Mount	UMT3	SC-70, SOT-323
SCT3105KLGC11	Rohm Semiconductor	SICFET N-CH 1200V 24A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock453	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	5.6V @ 3.81mA	51 nC @ 18 V	574 pF @ 800 V	+22V, -4V	-	134W	137mOhm @ 7.6A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
RSS100N03FRATB	Rohm Semiconductor	MOSFET N-CH 30V 10A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,230	MOSFET (Metal Oxide)	30 V	10A (Ta)	4V, 10V	2.5V @ 1mA	20 nC @ 5 V	1070 pF @ 10 V	±20V	-	2W (Ta)	13.3mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
R8008ANJFRGTL	Rohm Semiconductor	MOSFET N-CH 800V 8A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	5V @ 1mA	38 nC @ 10 V	1100 pF @ 25 V	±30V	-	195W (Tc)	1.03Ohm @ 4A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3105KW7TL	Rohm Semiconductor	SICFET N-CH 1200V 23A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 125W Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock5,745	SiCFET (Silicon Carbide)	1200 V	23A (Tc)	-	5.6V @ 3.81mA	51 nC @ 18 V	574 pF @ 800 V	+22V, -4V	-	125W	137mOhm @ 7.6A, 18V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RSS100N03HZGTB	Rohm Semiconductor	NCH 30V 10A AUTOMOTIVE POWER MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock2,910	MOSFET (Metal Oxide)	30 V	10A (Ta)	4V, 10V	2.5V @ 1mA	20 nC @ 5 V	1070 pF @ 10 V	±20V	-	2W (Ta)	13.3mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RD3G07BATTL1	Rohm Semiconductor	PCH -40V -70A POWER MOSFET - RD3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock27,813	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	2.5V @ 1mA	105 nC @ 10 V	5550 pF @ 20 V	±20V	-	101W (Tc)	7.1mOhm @ 70A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ5E035XNTCL	Rohm Semiconductor	MOSFET N-CH 30V 3.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock18,000	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	4V, 10V	2.5V @ 1mA	3.3 nC @ 5 V	180 pF @ 10 V	±20V	-	700mW (Ta)	50mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RSS060P05HZGTB	Rohm Semiconductor	PCH -45V -6A POWER MOSFET: RSS06 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock6,225	MOSFET (Metal Oxide)	45 V	6A (Ta)	4V, 10V	2.5V @ 1mA	32.2 nC @ 5 V	2700 pF @ 10 V	±20V	-	1.4W (Ta)	36mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RD3L080SNTL1	Rohm Semiconductor	MOSFET N-CH 60V 8A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock126	MOSFET (Metal Oxide)	60 V	8A (Ta)	4V, 10V	2.5V @ 1mA	9.4 nC @ 10 V	380 pF @ 10 V	±20V	-	15W (Tc)	80mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ5H025TNTL	Rohm Semiconductor	MOSFET N-CH 45V 2.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock31,077	MOSFET (Metal Oxide)	45 V	2.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	3.2 nC @ 4.5 V	250 pF @ 10 V	±12V	-	700mW (Ta)	130mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
R6507END3TL1	Rohm Semiconductor	650V 7A TO-252, LOW-NOISE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,431	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	4V @ 200µA	20 nC @ 10 V	390 pF @ 25 V	±20V	-	78W (Tc)	665mOhm @ 2.4A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6524KNZC8	Rohm Semiconductor	MOSFET N-CH 650V 24A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 750µA	45 nC @ 10 V	1850 pF @ 25 V	±20V	-	74W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
RS1L120GNTB	Rohm Semiconductor	MOSFET N-CH 60V 12A/36A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 12.7mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Stock18	MOSFET (Metal Oxide)	60 V	12A (Ta), 36A (Tc)	4.5V, 10V	2.7V @ 200µA	26 nC @ 10 V	1330 pF @ 30 V	±20V	-	3W (Ta)	12.7mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
SCT3030KLHRC11	Rohm Semiconductor	SICFET N-CH 1200V 72A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 339W Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock1,749	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	5.6V @ 13.3mA	131 nC @ 18 V	2222 pF @ 800 V	+22V, -4V	-	339W	39mOhm @ 27A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
R6030ENXC7G	Rohm Semiconductor	600V 30A TO-220FM, LOW-NOISE POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,880	MOSFET (Metal Oxide)	600 V	30A (Ta)	10V	4V @ 1mA	85 nC @ 10 V	2100 pF @ 25 V	±20V	-	86W (Tc)	130mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6530KNZ4C13	Rohm Semiconductor	650V 30A TO-247, HIGH-SPEED SWIT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	Package: -	Stock1,113	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	5V @ 960µA	56 nC @ 10 V	2350 pF @ 25 V	±20V	-	305W (Tc)	140mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-247G	TO-247-3
R6020YNXC7G	Rohm Semiconductor	600V 12A TO-220FM, FAST SWITCHIN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 6V @ 1.65mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,195	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V, 12V	6V @ 1.65mA	28 nC @ 10 V	1200 pF @ 100 V	±30V	-	62W (Tc)	200mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
SCT4026DRC15	Rohm Semiconductor	750V, 26M, 4-PIN THD, TRENCH-STR FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 176W Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock8,856	SiCFET (Silicon Carbide)	750 V	56A (Tc)	18V	4.8V @ 15.4mA	94 nC @ 18 V	2320 pF @ 500 V	+21V, -4V	-	176W	34mOhm @ 29A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
R6035ENZC17	Rohm Semiconductor	MOSFET N-CH 600V 35A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock798	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	4V @ 1mA	110 nC @ 10 V	2720 pF @ 25 V	±20V	-	120W (Tc)	102mOhm @ 18.1A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
RRS040P03FRATB	Rohm Semiconductor	MOSFET P-CH 30V 4A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	2.5V @ 1mA	5.2 nC @ 5 V	480 pF @ 10 V	±20V	-	2W (Ta)	75mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)