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Rohm Semiconductor |
NCH 600V 49A, TO-247G, POWER MOS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 448W (Tc)
- Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,800 |
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MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V, 12V | 6V @ 2.9mA | 65 nC @ 10 V | 2940 pF @ 100 V | ±30V | - | 448W (Tc) | 82mOhm @ 11A, 12V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock8,793 |
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MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 10.7 nC @ 4.5 V | 540 pF @ 10 V | ±12V | - | 950mW (Ta) | 43mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
NCH 40V 180A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.64mOhm @ 90A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock8,709 |
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MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 168 nC @ 10 V | 12000 pF @ 20 V | ±20V | - | 125W (Tc) | 1.64mOhm @ 90A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 35A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock1,740 |
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MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 5V @ 1mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 379W (Tc) | 102mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
SICFET N-CH 650V 21A TO263-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 100W
- Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,436 |
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SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | - | 5.6V @ 3.33mA | 38 nC @ 18 V | 460 pF @ 500 V | +22V, -4V | - | 100W | 156mOhm @ 6.7A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
MOSFET N-CH 650V 30A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock900 |
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MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 4V @ 960µA | 90 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 86W (Tc) | 140mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 600V 61A, TO-247, POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock1,788 |
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MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V, 12V | 6V @ 3.5mA | 76 nC @ 10 V | 3700 pF @ 100 V | ±30V | - | 568W (Tc) | 60mOhm @ 13A, 12V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 100V 35A, TO-252, POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock6,906 |
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MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 6V, 10V | 4V @ 1mA | 12.4 nC @ 10 V | 800 pF @ 50 V | ±20V | - | 50W (Tc) | 23mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
750V, 45M, 4-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 115W
- Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock14,583 |
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SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | 115W | 59mOhm @ 17A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET P-CH 12V 5A TSMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock8,814 |
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MOSFET (Metal Oxide) | 12 V | 5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 35 nC @ 4.5 V | 2850 pF @ 6 V | ±10V | - | 950mW (Ta) | 26mOhm @ 5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
PCH -100V -7A POWER MOSFET: RS3P
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 115 nC @ 10 V | 5150 pF @ 50 V | ±20V | - | 2W (Ta) | 36mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
650V 20A TO-247, LOW-NOISE POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock3,459 |
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MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 4V @ 630µA | 61 nC @ 10 V | 1400 pF @ 25 V | ±20V | - | 231W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 1.38mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock6,000 |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 7V @ 1.38mA | 22 nC @ 15 V | 645 pF @ 100 V | ±30V | - | 125W (Tc) | 585mOhm @ 4.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
650V 11A TO-220FM, HIGH-SPEED SW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock11,952 |
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MOSFET (Metal Oxide) | 650 V | 11A (Ta) | 10V | 5V @ 320µA | 22 nC @ 10 V | 760 pF @ 25 V | ±20V | - | 53W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock2,943 |
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MOSFET (Metal Oxide) | 45 V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 2.3 nC @ 4.5 V | 150 pF @ 10 V | ±12V | - | 950mW (Ta) | 190mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 100V 40A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock33 |
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MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4V, 10V | 2.5V @ 1mA | 90 nC @ 10 V | 3600 pF @ 25 V | ±20V | - | 1.35W (Ta), 50W (Tc) | 27mOhm @ 40A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 40V 45A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,400 |
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MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 3V @ 1mA | 43 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 50W (Tc) | 13.5mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 600V 47A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock9 |
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MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 4V @ 1mA | 145 nC @ 10 V | 3850 pF @ 25 V | ±20V | - | 481W (Tc) | 72mOhm @ 25.8A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 9A TO-252, HIGH-SPEED S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,500 |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 5V @ 1mA | 16.5 nC @ 10 V | 540 pF @ 25 V | ±20V | - | 94W (Tc) | 535mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
1200V, 10A, THD, SILICON-CARBIDE
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock1,320 |
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SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 4V @ 900µA | 27 nC @ 18 V | 463 pF @ 800 V | +22V, -6V | - | 85W (Tc) | 585mOhm @ 3A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
600V 9A TO-220FM, FAST SWITCHING
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,204 |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V, 12V | 6V @ 1.4mA | 20 nC @ 10 V | 890 pF @ 100 V | ±30V | - | 54W (Tc) | 260mOhm @ 5A, 12V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET P-CH 30V 10A TSMT8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
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Package: - |
Stock7,851 |
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MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 53 nC @ 10 V | 2370 pF @ 15 V | ±20V | - | 1.1W (Ta) | 11.2mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
PCH -30V -4.5A POWER MOSFET. RW4
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1616-7T
- Package / Case: 6-PowerUFDFN
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Package: - |
Stock8,820 |
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MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 11 nC @ 10 V | 485 pF @ 15 V | ±20V | - | 1.5W (Ta) | 48mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | DFN1616-7T | 6-PowerUFDFN |
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Rohm Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock327 |
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MOSFET (Metal Oxide) | 60 V | 6.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 16 nC @ 5 V | 900 pF @ 10 V | 20V | - | 2W (Ta) | 37mOhm @ 6.5A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
PCH -40V -35A, HSMT8, POWER MOSF
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 12.4mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock25,827 |
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MOSFET (Metal Oxide) | 40 V | 11A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 46 nC @ 10 V | 2750 pF @ 20 V | ±20V | - | 2W (Ta) | 12.4mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock90 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 15V | 7V @ 3.5mA | 45 nC @ 15 V | 1500 pF @ 100 V | ±30V | - | 76W (Tc) | 234mOhm @ 10A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 150V 105A, TO-263AB, POWER M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 181W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,400 |
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MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 6V, 10V | 4V @ 1mA | 130 nC @ 10 V | 7750 pF @ 75 V | ±20V | - | 181W (Tc) | 8.2mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
SICFET N-CH 650V 30A TO247N
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 134W
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock1,362 |
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SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 5.6V @ 5mA | 48 nC @ 18 V | 571 pF @ 500 V | +22V, -4V | - | 134W | 104mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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