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Rohm Semiconductor |
MOSFET P-CH 12V 2.5A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
|
Package: SC-96 |
Stock508,464 |
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MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 13nC @ 4.5V | 1350pF @ 6V | ±10V | - | 1W (Ta) | 61 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 12V 4A TUMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 6V
- Vgs (Max): -8V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock2,089,200 |
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MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 37nC @ 4.5V | 4000pF @ 6V | -8V | - | 800mW (Ta) | 30 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 40V 12A 8HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock53,874 |
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MOSFET (Metal Oxide) | 40V | 12A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 9.4nC @ 10V | 570pF @ 20V | ±20V | - | 3W (Ta), 25W (Tc) | 16.2 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
- Vgs (Max): 12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock450,660 |
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MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 3.3nC @ 4.5V | 135pF @ 10V | 12V | - | 1.25W (Ta) | 125 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 12A 8-HSMT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 16W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock27,756 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10nC @ 10V | 590pF @ 15V | ±20V | - | 2W (Ta), 16W (Tc) | 8.8 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 8A 8-HUML
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUML2020L8 (2x2)
- Package / Case: 8-PowerUDFN
|
Package: 8-PowerUDFN |
Stock23,922 |
|
MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 5.8nC @ 10V | 295pF @ 15V | ±20V | - | 2W (Ta) | 17.6 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 6-HUML2020L8 (2x2) | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 3.5A TUMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT6
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock55,452 |
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MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 8nC @ 5V | 800pF @ 10V | ±20V | - | 320mW (Ta) | 50 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 200MA SOT416
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EMT3
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock1,554,852 |
|
MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 4V, 10V | 2.5V @ 1mA | - | 30pF @ 10V | ±20V | - | 150mW (Ta) | 1.4 Ohm @ 200mA, 10V | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET N-CH 20V 5A TSMT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock161,160 |
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MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12nC @ 4.5V | 900pF @ 10V | ±10V | - | 1.25W (Ta) | 30 mOhm @ 5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 60V 300MA SOT-346
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMT3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock523,872 |
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MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4V, 10V | 2.5V @ 1mA | 6nC @ 10V | 33pF @ 10V | ±20V | - | 200mW (Ta) | 1 Ohm @ 300mA, 10V | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 12V 3A WEMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 6V
- Vgs (Max): -8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WEMT
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock95,514 |
|
MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 22nC @ 4.5V | 2700pF @ 6V | -8V | - | 700mW (Ta) | 42 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.5A WEMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WEMT
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock86,580 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 21nC @ 4.5V | 1300pF @ 10V | ±10V | - | 700mW (Ta) | 65 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 45V 1.6A TUMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.6A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock36,120 |
|
MOSFET (Metal Oxide) | 45V | 1.6A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 2.3nC @ 4.5V | 150pF @ 10V | ±12V | - | 320mW (Ta) | 190 mOhm @ 1.6A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 500MA SOT-346
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMT3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock663,012 |
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MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 4V, 10V | 2.5V @ 1mA | - | 45pF @ 10V | ±20V | - | 200mW (Ta) | 550 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock142,440 |
|
MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 6.4nC @ 10V | 230pF @ 10V | ±20V | - | 320mW (Ta) | 160 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 7A HSMT8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock24,366 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 8.9nC @ 10V | 410pF @ 15V | ±20V | - | 2W (Ta) | 27 mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 200MA SOT-346
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 100mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMT3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,034,804 |
|
MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 4V, 10V | 2.5V @ 1mA | - | 25pF @ 10V | ±20V | - | 200mW (Ta) | 2.8 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 500MA SOT-346
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 580 mOhm @ 500mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMT3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,599,456 |
|
MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 4nC @ 4V | 60pF @ 10V | ±12V | - | 200mW (Ta) | 580 mOhm @ 500mA, 4.5V | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 3.5A TSMT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
|
Package: SC-96 |
Stock71,640 |
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MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10nC @ 10V | 475pF @ 15V | ±20V | - | 1W (Ta) | 50 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock47,346 |
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MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 6.4nC @ 10V | 230pF @ 10V | ±20V | - | 320mW (Ta) | 160 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 12V 1.3A TUMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock156,012 |
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MOSFET (Metal Oxide) | 12V | 1.3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | ±10V | - | 800mW (Ta) | 260 mOhm @ 1.3A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A UMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock375,732 |
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MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | - | 25pF @ 10V | ±8V | - | 200mW (Ta) | 2.2 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A UMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock186,000 |
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MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.3V @ 1mA | - | 15pF @ 25V | ±20V | - | 200mW (Ta) | 2.4 Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET P-CH 30V 0.25A UMT3F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3F
- Package / Case: SC-85
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Package: SC-85 |
Stock28,848 |
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MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 2.5V @ 1mA | - | 30pF @ 10V | ±20V | - | 200mW (Ta) | 1.4 Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A UMT3F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3F
- Package / Case: SC-85
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Package: SC-85 |
Stock36,000 |
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MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | - | 15pF @ 10V | ±10V | - | 150mW (Ta) | 3.8 Ohm @ 100mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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Rohm Semiconductor |
MOSFET N-CH 600V 76A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 44.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,744 |
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MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 4V @ 1mA | 260nC @ 10V | 6500pF @ 25V | ±20V | - | 120W (Tc) | 42 mOhm @ 44.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 14A TO-247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 667pF @ 800V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Rds On (Max) @ Id, Vgs: 364 mOhm @ 4A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock20,160 |
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SiCFET (Silicon Carbide) | 1200V | 14A (Tc) | 18V | 4V @ 1.4mA | 36nC @ 18V | 667pF @ 800V | +22V, -6V | - | 108W (Tc) | 364 mOhm @ 4A, 18V | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 21A TO247N
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Rds On (Max) @ Id, Vgs: 156 mOhm @ 6.7A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock18,396 |
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SiCFET (Silicon Carbide) | 650V | 21A (Tc) | 18V | 5.6V @ 3.33mA | 38nC @ 18V | 460pF @ 500V | +22V, -4V | - | 103W (Tc) | 156 mOhm @ 6.7A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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