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Rohm Semiconductor |
NCH 40V 70A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 70A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,922 |
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MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 56 nC @ 10 V | 3540 pF @ 20 V | ±20V | - | 89W (Tc) | 3mOhm @ 70A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 650V 11A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock270 |
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MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4V @ 320µA | 32 nC @ 10 V | 670 pF @ 25 V | ±20V | - | 124W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 86A, TO-247, POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 4.6mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 781W (Tc)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,704 |
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MOSFET (Metal Oxide) | 600 V | 86A (Tc) | 10V, 12V | 6V @ 4.6mA | 110 nC @ 10 V | 5100 pF @ 100 V | ±30V | - | 781W (Tc) | 44mOhm @ 17A, 12V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
1200V, 18M, 4-PIN THD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 312W
- Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock14,571 |
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SiCFET (Silicon Carbide) | 1200 V | 81A (Tc) | 18V | 4.8V @ 22.2mA | 170 nC @ 18 V | 4532 pF @ 800 V | +21V, -4V | - | 312W | 23.4mOhm @ 42A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
1200V, 24A, 7-PIN SMD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 93W
- Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7L
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,940 |
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SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | 1498 pF @ 800 V | +21V, -4V | - | 93W | 81mOhm @ 12A, 18V | 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
NCH 30V 1.4A, DFN1006-3, SMALL S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 1.4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: 3-XFDFN
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Package: - |
Stock23,970 |
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MOSFET (Metal Oxide) | 30 V | 700mA (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | - | 105 pF @ 15 V | ±12V | - | 400mW (Ta) | 290mOhm @ 1.4A, 4.5V | 150°C (TJ) | Surface Mount | DFN1006-3 | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 250V 8A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock29,934 |
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MOSFET (Metal Oxide) | 250 V | 8A (Tc) | 10V | 5V @ 1mA | 25 nC @ 10 V | 1440 pF @ 25 V | ±30V | - | 85W (Tc) | 300mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
PCH -40V -35A POWER MOSFET - RD3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock13,857 |
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MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 38 nC @ 10 V | 2100 pF @ 20 V | ±20V | - | 56W (Tc) | 19.1mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 45V 7A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 2.5V @ 1mA | 16.8 nC @ 5 V | 1000 pF @ 10 V | ±20V | - | 2W (Ta) | 25mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 100V 40A, TO-263AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 40A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,388 |
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MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 6V, 10V | 4V @ 1mA | 38 nC @ 10 V | 2410 pF @ 50 V | ±20V | - | 89W (Tc) | 8.8mOhm @ 40A, 10V | 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4.15V @ 1mA | 50 nC @ 10 V | 1700 pF @ 25 V | ±30V | - | 110W (Tc) | 300mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock5,790 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 15V | 7V @ 3.5mA | 45 nC @ 15 V | 1500 pF @ 100 V | ±30V | - | 76W (Tc) | 234mOhm @ 10A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock1,800 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 4V @ 1mA | 60 nC @ 10 V | 1400 pF @ 25 V | ±20V | - | 231W (Tc) | 196mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
ECOGAN, 650V 11A DFN8080AK, E-MO
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
- Vgs(th) (Max) @ Id: 2.4V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V
- Vgs (Max): +6V, -10V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN8080AK
- Package / Case: 8-PowerDFN
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Package: - |
Stock9,153 |
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GaNFET (Gallium Nitride) | 650 V | 11A (Tc) | 5V, 5.5V | 2.4V @ 18mA | 2.7 nC @ 6 V | 112 pF @ 400 V | +6V, -10V | - | 62.5W (Tc) | 195mOhm @ 1.9A, 5.5V | 150°C (TJ) | Surface Mount | DFN8080AK | 8-PowerDFN |
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Rohm Semiconductor |
MOSFET N-CH 100V 17.5A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock11,211 |
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MOSFET (Metal Oxide) | 100 V | 17.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 24 nC @ 10 V | 950 pF @ 25 V | ±20V | - | 20W (Tc) | 105mOhm @ 8.8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 250MA SST3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SST3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock109,155 |
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MOSFET (Metal Oxide) | 60 V | 250mA (Ta) | 2.5V, 10V | 2.3V @ 1mA | - | 15 pF @ 25 V | ±20V | - | 350mW (Ta) | 2.4Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
PCH -60V -3.5A POWER MOSFET - RQ
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 22 nC @ 10 V | 1190 pF @ 30 V | ±20V | - | 950mW (Ta) | 78mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
AUTOMOTIVE NCH 45V 7A POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock6,444 |
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MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 2.5V @ 1mA | 16.8 nC @ 5 V | 1000 pF @ 10 V | ±20V | - | 1.4W (Ta) | 25mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 650V 9A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock264 |
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MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 4V @ 230µA | 24 nC @ 10 V | 430 pF @ 25 V | ±20V | - | 94W (Tc) | 585mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 45V 7A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 16.8 nC @ 5 V | 1000 pF @ 10 V | ±20V | - | 2W (Ta) | 25mOhm @ 7A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock900 |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 15V | 7V @ 2.5mA | 57 nC @ 15 V | 1900 pF @ 100 V | ±30V | - | 85W (Tc) | 182mOhm @ 12.5A, 15V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING, NCH 650V 9
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,470 |
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MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 5V @ 230µA | 16.5 nC @ 10 V | 540 pF @ 25 V | ±20V | - | 94W (Tc) | 585mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
PCH -100V -120A POWER MOSFET: RX
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 201W (Tc)
- Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,571 |
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MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 4V @ 1mA | 385 nC @ 10 V | 16600 pF @ 50 V | ±20V | - | 201W (Tc) | 12.3mOhm @ 60A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
NCH 600V 20A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 1.65mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,925 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V, 12V | 6V @ 1.65mA | 28 nC @ 10 V | 1200 pF @ 100 V | ±30V | - | 182W (Tc) | 185mOhm @ 6A, 12V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 100V 17.5A/60A 8HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 17.5A (Ta), 60A (Tc) | 10V | 4V @ 500µA | 33 nC @ 10 V | 2200 pF @ 50 V | ±20V | - | 3W (Ta), 35W (Tc) | 9.7mOhm @ 17.5A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO247G
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 252W (Tc)
- Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,065 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 15V | 7V @ 3.5mA | 45 nC @ 15 V | 1500 pF @ 100 V | ±30V | - | 252W (Tc) | 234mOhm @ 10A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock25,047 |
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MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.2 nC @ 5 V | 230 pF @ 10 V | ±20V | - | 700mW (Ta) | 160mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
NCH 600V 14A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,988 |
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MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V, 12V | 6V @ 1.4mA | 20 nC @ 10 V | 890 pF @ 100 V | ±30V | - | 132W (Tc) | 260mOhm @ 5A, 12V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |