Rohm Semiconductor Products

MOSFET P-CH 45V 6A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 32.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

TRANS NPN 11V 0.05A VMT3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 11V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 3.2GHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

TRANS NPN 25V 2A SOT-89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 1A
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 500mA, 6V
• Power - Max: 2W
• Frequency - Transition: 110MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: MPT3

TRANS PREBIAS NPN 50V EMT3F

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-89, SOT-490
• Supplier Device Package: EMT3F (SOT-416FL)

DIODE ZENER 9.1V 1W PMDS

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS

DIODE GP 600V 10A TO220ACFP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220ACFP
• Operating Temperature - Junction: 150°C (Max)

IC REG LINEAR 7V 1A 8HTSOP-J

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 8V
• Voltage - Output (Min/Fixed): 7V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.92V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 6µA ~ 15µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Soft Start
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

IC DETECTOR VOLT 3.9V CMOS 5SSOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 3.9V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

IC DETECTOR VOLT 4.4V CMOS 5VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 4.4V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

IC DETECTOR VOLT 2.6V OD SSOP3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 2.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-SSOP

IC RESET OD 2.7V 100MS 5SSOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 90 ms Minimum
• Voltage - Threshold: 2.7V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

LED DOT MATRIX 64X128 RGB

• Millicandela Rating: -
• Internal Connection: -
• Size / Dimension: 5.04" L x 2.52" W x 0.31" H (128.00mm x 64.00mm x 8.00mm)
• Color: Red, Green, Blue (RGB)
• Configuration: 24 x 24
• Voltage - Forward (Vf) (Typ): -
• Interface: -

RES SMD 9.1K OHM 5% 1/4W 1206

• Resistance: 9.1 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 715 OHM 1% 1/8W 0805

• Resistance: 715 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 470 OHM 5% 1/4W 1206

• Resistance: 470 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 562K OHM 1% 1/8W 0805

• Resistance: 562 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 150 OHM 5% 1/16W 0402

• Resistance: 150 Ohms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 681 OHM 1% 1/8W 0805

• Resistance: 681 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 13K OHM 5% 1/10W 0603

• Resistance: 13 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 121K OHM 1% 1/16W 0402

• Resistance: 121 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 68K OHM 5% 1W 2512

• Resistance: 68 kOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 18K OHM 5% 1/16W 0402

• Resistance: 18 kOhms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

MOSFET N-CH 45V 2A TSMT6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 950mW (Ta)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT6 (SC-95)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

NCH 60V 70A, TO-220AB, POWER MO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 4.6mOhm @ 70A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

DIODE ARR SCHOTT 45V 20A TO252GE

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 45 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252GE

SIC 2N-CH 1200V 291A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
• Power - Max: 925W (Tc)
• Operating Temperature: 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

650V 35A, TO-220AB, HIGH-SPEED S

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1.3mA
• Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

DIODE SCHOTTKY 40V 3A PMDTM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)