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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE CPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 525V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,240 |
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Rohm Semiconductor |
MOSFET N-CH 45V 7A SOP8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,816 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V 0.15W SC89
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: EMT3F (SOT-416FL)
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Package: SC-89, SOT-490 |
Stock5,328 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 200MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock36,000 |
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Rohm Semiconductor |
TRANS PREBIAS DUAL PNP UMT5
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: UMT5
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Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock233,784 |
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Rohm Semiconductor |
DIODE ZENER 7.5V 1W PMDS
- Voltage - Zener (Nom) (Vz): 7.5V
- Tolerance: ±6%
- Power - Max: 1W
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 20µA @ 4V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: PMDS
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Package: DO-214AC, SMA |
Stock6,736 |
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Rohm Semiconductor |
IC RESET N-CH OD 3.4V 5SSOP
- Type: Simple Reset/Power-On Reset
- Number of Voltages Monitored: 1
- Output: Open Drain or Open Collector
- Reset: Active Low
- Reset Timeout: -
- Voltage - Threshold: 3.4V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: 5-SSOP
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Package: SC-74A, SOT-753 |
Stock37,140 |
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Rohm Semiconductor |
TFT POWER MANAGEMENT IC
- Applications: Automotive
- Current - Supply: 5mA
- Voltage - Supply: 6 V ~ 24 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 48-LQFP
- Supplier Device Package: 48-VQFP (7x7)
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Package: 48-LQFP |
Stock246,936 |
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Rohm Semiconductor |
IC LED DRIVER CTRLR DIM 28HTSSOP
- Type: DC DC Controller
- Topology: Step-Down (Buck), Step-Up (Boost)
- Internal Switch(s): No
- Number of Outputs: 1
- Voltage - Supply (Min): 5V
- Voltage - Supply (Max): 30V
- Voltage - Output: -
- Current - Output / Channel: -
- Frequency: 300kHz
- Dimming: PWM
- Applications: Automotive
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-VSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 28-HTSSOP-B
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Package: 28-VSSOP (0.173", 4.40mm Width) |
Stock6,560 |
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Rohm Semiconductor |
TVS DIODE 3.3VWM 8.2VC DSN0603-2
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 3.3V (Max)
- Voltage - Breakdown (Min): 4V
- Voltage - Clamping (Max) @ Ipp: 8.2V
- Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
- Power - Peak Pulse: 45W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 10pF @ 1MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: DSN0603-2, SOD-962, SMD0603
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Package: 0201 (0603 Metric) |
Stock4,752 |
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Rohm Semiconductor |
RES SMD 240 OHM 5% 1/4W 1206
- Resistance: 240 Ohms
- Tolerance: ±5%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: -
- Temperature Coefficient: ±200ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock6,570 |
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Rohm Semiconductor |
RES SMD 34.8 OHM 1% 1/10W 0603
- Resistance: 34.8 Ohms
- Tolerance: ±1%
- Power (Watts): 0.1W, 1/10W
- Composition: Thick Film
- Features: Automotive AEC-Q200
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: 0603
- Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
- Height - Seated (Max): 0.022" (0.55mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0603 (1608 Metric) |
Stock8,082 |
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Rohm Semiconductor |
RES SMD 31.6 OHM 1% 1/10W 0603
- Resistance: 31.6 Ohms
- Tolerance: ±1%
- Power (Watts): 0.1W, 1/10W
- Composition: Thick Film
- Features: Automotive AEC-Q200
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: 0603
- Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
- Height - Seated (Max): 0.022" (0.55mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0603 (1608 Metric) |
Stock6,084 |
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Rohm Semiconductor |
RES SMD 309 OHM 1% 0.4W 0805
- Resistance: 309 Ohms
- Tolerance: ±1%
- Power (Watts): 0.4W
- Composition: Thick Film
- Features: Automotive AEC-Q200, Pulse Withstanding
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
- Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0805 (2012 Metric) |
Stock5,130 |
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Rohm Semiconductor |
RES SMD 180K OHM 1% 0.4W 0805
- Resistance: 180 kOhms
- Tolerance: ±1%
- Power (Watts): 0.4W
- Composition: Thick Film
- Features: Automotive AEC-Q200, Pulse Withstanding
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
- Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0805 (2012 Metric) |
Stock8,154 |
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Rohm Semiconductor |
RES SMD 11 OHM 1% 1/3W 1206
- Resistance: 11 Ohms
- Tolerance: ±1%
- Power (Watts): 0.333W, 1/3W
- Composition: Thick Film
- Features: Automotive AEC-Q200, Pulse Withstanding
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock3,472 |
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Rohm Semiconductor |
RES SMD 2.7M OHM 5% 1/16W 0402
- Resistance: 2.7 MOhms
- Tolerance: ±5%
- Power (Watts): 0.063W, 1/16W
- Composition: Thick Film
- Features: Anti-Sulfur
- Temperature Coefficient: ±200ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0402 (1005 Metric)
- Supplier Device Package: 0402
- Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
- Height - Seated (Max): 0.016" (0.40mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0402 (1005 Metric) |
Stock3,222 |
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Rohm Semiconductor |
RES SMD 240K OHM 5% 1/4W 1206
- Resistance: 240 kOhms
- Tolerance: ±5%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: -
- Temperature Coefficient: ±200ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock36,306 |
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Rohm Semiconductor |
RES SMD 1.4K OHM 1% 1/16W 0402
- Resistance: 1.4 kOhms
- Tolerance: ±1%
- Power (Watts): 0.063W, 1/16W
- Composition: Thick Film
- Features: Anti-Sulfur
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0402 (1005 Metric)
- Supplier Device Package: 0402
- Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
- Height - Seated (Max): 0.016" (0.40mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0402 (1005 Metric) |
Stock184,656 |
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Rohm Semiconductor |
RES SMD 10M OHM 5% 1/8W 0805
- Resistance: 10 MOhms
- Tolerance: ±5%
- Power (Watts): 0.125W, 1/8W
- Composition: Thick Film
- Features: Automotive AEC-Q200, High Voltage
- Temperature Coefficient: ±200ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
- Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0805 (2012 Metric) |
Stock121,428 |
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Rohm Semiconductor |
MEMORY EEPROM
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 4ns
- Access Time: -
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP-J
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock21,576 |
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Rohm Semiconductor |
DIODE ARR SCHOTT 40V 30MA UMD3F
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 30mA
- Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 30 V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMD3F
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Package: - |
Stock9,099 |
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Rohm Semiconductor |
TRANS PREBIAS NPN 50V 0.1A EMT3F
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: EMT3F (SOT-416FL)
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Package: - |
Stock4,875 |
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Rohm Semiconductor |
DIODE ZENER 12V 500MW TUMD2M
- Voltage - Zener (Nom) (Vz): 12 V
- Tolerance: ±10%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 10 µA @ 8 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: TUMD2M
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Package: - |
Stock8,970 |
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Rohm Semiconductor |
TRANS PNP 50V 0.1A VMT3
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 20A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 960 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 70 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263L
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600 nA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: PMDE
- Operating Temperature - Junction: 175°C
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Package: - |
Stock8,211 |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 12.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Request a Quote |
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