Rohm Semiconductor Products

MOSFET N-CH 30V 3.5A TUMT6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
• Vgs (Max): 12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 56 mOhm @ 3.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT6
• Package / Case: 6-SMD, Flat Leads

IC REG LINEAR 12V 1A TO220FP-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 25V
• Voltage - Output (Min/Fixed): 12V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2.5mA ~ 5mA
• PSRR: 55dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack
• Supplier Device Package: TO-220FP-5

IC REG LINEAR 7V 1A TO252-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 25V
• Voltage - Output (Min/Fixed): 7V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2.5mA ~ 5mA
• PSRR: 55dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-3

IC EEPROM 4KBIT 2MHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (256 x 16)
• Memory Interface: SPI
• Clock Frequency: 2MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

LED RED DIFFUSED 0603 SMD

• Color: Red
• Configuration: -
• Lens Color: White
• Lens Transparency: Diffused
• Millicandela Rating: 63mcd
• Lens Style/Size: Rectangle with Flat Top, 1.20mm x 0.80mm
• Voltage - Forward (Vf) (Typ): 2V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 630nm
• Wavelength - Peak: -
• Features: -
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603 (1608 Metric)
• Size / Dimension: 1.60mm L x 0.80mm W
• Height (Max): 0.65mm

RES SMD 34K OHM 1% 1/10W 0603

• Resistance: 34 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 19.6K OHM 1% 1/10W 0603

• Resistance: 19.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 6.19K OHM 1% 1/4W 1206

• Resistance: 6.19 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 51 OHM 5% 1/10W 0603

• Resistance: 51 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 150 OHM 1/4W 0805 WIDE

• Resistance: 150 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 0805 (2012 Metric), 0508
• Supplier Device Package: 0805
• Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 3.3M OHM 1% 1/10W 0603

• Resistance: 3.3 MOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 66.5 OHM 1% 1/10W 0603

• Resistance: 66.5 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 442 OHM 1% 1/8W 0805

• Resistance: 442 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 1.8 OHM 5% 1/8W 0805

• Resistance: 1.8 Ohms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±400ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 14.3 OHM 1% 1W 2512

• Resistance: 14.3 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 121 OHM 1% 1W 2512

• Resistance: 121 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

RES SMD 1.6K OHM 5% 0.4W 0805

• Resistance: 1.6 kOhms
• Tolerance: ±5%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

MEMORY EEPROM

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 512Kb (64K x 8)
• Memory Interface: I²C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP-B

BM2SCQ123T-LBZ IS A QUASI-RESONA

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 1700V
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
• Duty Cycle: -
• Frequency - Switching: 30kHz, 120kHz
• Power (Watts): 1.5W
• Fault Protection: Over Current, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -40°C ~ 105°C
• Package / Case: TO-220-6 Full Pack, Formed Leads
• Supplier Device Package: TO-220-6M
• Mounting Type: Through Hole

IC EEPROM 256KBIT I2C 8TSSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 256Kbit
• Memory Interface: I2C
• Clock Frequency: 1 MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP-B

DIODE ARR SCHOTT 40V 10A TO252GE

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 120 µA @ 40 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252GE

DIODE SIL CARB 650V 12A TO263AB

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 240 µA @ 600 V
• Capacitance @ Vr, F: 438pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: 175°C (Max)

NCH 150V 25A, HSMT8, POWER MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 59W (Tc)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSMT (3.2x3)
• Package / Case: 8-PowerVDFN

TLR SERIES, LOW VOLTAGE OPERATIO

• Amplifier Type: CMOS
• Number of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 1.2V/µs
• Gain Bandwidth Product: 2.3 MHz
• -3db Bandwidth: -
• Current - Input Bias: 1 pA
• Voltage - Input Offset: 300 µV
• Current - Supply: 150µA
• Current - Output / Channel: 120 mA
• Voltage - Supply, Single/Dual (±): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

MOSFET N-CH 45V 2.5A TSMT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45 V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

MOSFET N/P-CH 30V 18A/15A 8HSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
• Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
• Power - Max: 3W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

TRANS PREBIAS NPN 50V 0.1A VMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 1 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

TRANS PREBIAS PNP 50V 0.1A VMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 100 kOhms
• Resistor - Emitter Base (R2) (Ohms): 100 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3