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STMicroelectronics |
MOSFET N-CH 800V 0.25A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock234,840 |
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MOSFET (Metal Oxide) | 800V | 250mA (Tc) | 10V | 4.5V @ 50µA | 7.7nC @ 10V | 160pF @ 25V | ±30V | - | 2.5W (Tc) | 16 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 60V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock744,252 |
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MOSFET (Metal Oxide) | 60V | 24A (Tc) | 5V, 10V | 1V @ 250µA | 7.5nC @ 5V | 370pF @ 25V | ±18V | - | 40W (Tc) | 70 mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 800V 1A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,507,080 |
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MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 4.5V @ 50µA | 7.7nC @ 10V | 160pF @ 25V | ±30V | - | 45W (Tc) | 16 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 2.4A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock1,763,556 |
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MOSFET (Metal Oxide) | 100V | 2.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 280pF @ 25V | ±20V | - | 3.3W (Tc) | 260 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 600V 300MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock1,258,404 |
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MOSFET (Metal Oxide) | 600V | 300mA (Tc) | 10V | 4.5V @ 50µA | 6.9nC @ 10V | 94pF @ 25V | ±30V | - | 3.3W (Tc) | 15 Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 60V 4A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock684,492 |
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MOSFET (Metal Oxide) | 60V | 4A (Tc) | 5V, 10V | 2.8V @ 250µA | 9nC @ 5V | 340pF @ 25V | ±16V | - | 3.3W (Tc) | 100 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 40 V,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 105W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: - |
Stock354 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 26 nC @ 10 V | 1850 pF @ 25 V | ±20V | - | 105W (Tc) | 3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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STMicroelectronics |
SICFET N-CH 650V 95A H2PAK-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 650 V | 95A (Tc) | 18V | 5V @ 5mA | 162 nC @ 18 V | 3315 pF @ 520 V | +22V, -10V | - | 360W (Tc) | 26mOhm @ 50A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
DISCRETE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2468 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 74mOhm @ 22.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 4.75V @ 250µA | 52 nC @ 10 V | 2468 pF @ 100 V | ±25V | - | 357W (Tc) | 74mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
SICFET N-CH 650V 45A HIP247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 5V @ 1mA | 73 nC @ 20 V | 1370 pF @ 400 V | +22V, -10V | - | 240W (Tc) | 67mOhm @ 20A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 12A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 5V @ 250µA | 20 nC @ 10 V | 800 pF @ 100 V | ±25V | - | 25W (Tc) | 295mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 950V 2A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock17,241 |
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MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 5V @ 100µA | 3.4 nC @ 10 V | 105 pF @ 100 V | ±30V | - | 45W (Tc) | 5Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 31A PWRFLAT HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 189W (Tc)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 15.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 4.75V @ 250µA | 57 nC @ 10 V | - | ±25V | - | 189W (Tc) | 80mOhm @ 15.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
SICFET N-CH 650V 45A H2PAK-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 5V @ 1mA | 73 nC @ 20 V | 1370 pF @ 400 V | +22V, -10V | - | 208W (Tc) | 67mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
TRANS SJT N-CH 1200V 91A HIP247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 547W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 91A (Tc) | 18V | 4.9V @ 1mA | 150 nC @ 18 V | 3540 pF @ 800 V | +22V, -10V | - | 547W (Tc) | 30mOhm @ 50A, 18V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
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STMicroelectronics |
SICFET N-CH 650V 45A HIP247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 5V @ 1mA | 73 nC @ 20 V | 1370 pF @ 400 V | +22V, -10V | - | 240W (Tc) | 67mOhm @ 20A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
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STMicroelectronics |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 600V 25A PWRFLAT HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 4.75V @ 250µA | 44 nC @ 10 V | 1920 pF @ 100 V | ±25V | - | 160W (Tc) | 110mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N CH 80V 180A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 180A (Tc) | 10V | 4V @ 250µA | 193 nC @ 10 V | 13600 pF @ 50 V | ±20V | - | 315W (Tc) | 2.5mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
TO247-4
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 4.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V
- Vgs (Max): +18V, -5V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 30A (Tc) | 15V, 18V | 4.2V @ 1mA | 32 nC @ 18 V | 721 pF @ 40 V | +18V, -5V | - | 210W (Tc) | 72mOhm @ 15A, 18V | -55°C ~ 200°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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STMicroelectronics |
N-CHANNEL 800 V, 197 MOHM TYP.,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 220mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock2,979 |
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MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 4V @ 100µA | 25.9 nC @ 10 V | 1350 pF @ 100 V | ±30V | - | 140W (Tc) | 220mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
DISCRETE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 431W (Tc)
- Rds On (Max) @ Id, Vgs: 59mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 55A (Tc) | 10V | 4.75V @ 250µA | 80 nC @ 10 V | 3528 pF @ 100 V | ±25V | - | 431W (Tc) | 59mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
DISCRETE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 4.75V @ 250µA | 11.7 nC @ 10 V | 510 pF @ 100 V | ±25V | - | 89W (Tc) | 440mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 800V 9A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 9A (Tc) | 10V | 5V @ 100µA | 22 nC @ 10 V | 635 pF @ 100 V | ±30V | - | 130W (Tc) | 600mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,248 |
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MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 4.5V @ 250µA | 48 nC @ 10 V | 1370 pF @ 25 V | ±30V | - | 35W (Tc) | 750mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 11A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 5V @ 250µA | 19 nC @ 10 V | 730 pF @ 100 V | ±25V | - | 110W (Tc) | 365mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 100 V, 4.8 MOHM TYP.,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.5V @ 250µA | 93 nC @ 10 V | 4430 pF @ 25 V | ±20V | - | 340W (Tc) | 4mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 4.75V @ 250µA | 6.2 nC @ 10 V | 274 pF @ 100 V | ±25V | - | 60W (Tc) | 1.1Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPak, TO-251AA |