Page 16 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STW11NK90Z
STMicroelectronics

MOSFET N-CH 900V 9.2A TO-247

Package: TO-247-3

Stock116,880
STW12NK95Z
STMicroelectronics

MOSFET N-CH 950V 10A TO-247

Package: TO-247-3

Stock103,968
STW12NK80Z
STMicroelectronics

MOSFET N-CH 800V 10.5A TO-247

Package: TO-247-3

Stock36,012
STP40N65M2
STMicroelectronics

MOSFET N-CH 650V 32A TO220

Package: TO-220-3

Stock7,712
STB40N60M2
STMicroelectronics

MOSFET N-CH 600V 34A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,576
STP8NK100Z
STMicroelectronics

MOSFET N-CH 1000V 6.5A TO-220

Package: TO-220-3

Stock95,604
STP46NF30
STMicroelectronics

MOSFET N CH 300V 42A TO-220

Package: TO-220-3

Stock5,072
STP26NM60N
STMicroelectronics

MOSFET N-CH 600V 20A TO-220

Package: TO-220-3

Stock243,672
STB11NM80T4
STMicroelectronics

MOSFET N-CH 800V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock205,272
STF5NK100Z
STMicroelectronics

MOSFET N-CH 1KV 3.5A TO220FP

Package: TO-220-3 Full Pack

Stock74,508
STP40NF20
STMicroelectronics

MOSFET N-CH 200V 40A TO-220

Package: TO-220-3

Stock405,468
STV300NH02L
STMicroelectronics

MOSFET N-CH 24V 280A POWERSO-10

Package: PowerSO-10 Exposed Bottom Pad

Stock12,312
STF13NM60N
STMicroelectronics

MOSFET N-CH 600V 11A TO-220FP

Package: TO-220-3 Full Pack

Stock204,732
STW7NK90Z
STMicroelectronics

MOSFET N-CH 900V 5.8A TO-247

Package: TO-247-3

Stock21,804
STP11NM60ND
STMicroelectronics

MOSFET N-CH 600V 10A TO-220

Package: TO-220-3

Stock7,280
STP200NF04
STMicroelectronics

MOSFET N-CH 40V 120A TO-220

Package: TO-220-3

Stock410,688
STF7N105K5
STMicroelectronics

MOSFET N-CH 1050V 4A TO220FP

Package: TO-220-3 Full Pack

Stock7,668
STP80PF55
STMicroelectronics

MOSFET P-CH 55V 80A TO-220

Package: TO-220-3

Stock84,708
STW28N65M2
STMicroelectronics

MOSFET N-CH 650V 20A TO247

Package: TO-247-3

Stock7,704
STP80NF55L-06
STMicroelectronics

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock195,516

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STW11NK90Z	STMicroelectronics	MOSFET N-CH 900V 9.2A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock116,880	MOSFET (Metal Oxide)	900V	9.2A (Tc)	10V	4.5V @ 100µA	115nC @ 10V	3000pF @ 25V	±30V	-	200W (Tc)	980 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW12NK95Z	STMicroelectronics	MOSFET N-CH 950V 10A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,968	MOSFET (Metal Oxide)	950V	10A (Tc)	10V	4.5V @ 100µA	113nC @ 10V	3500pF @ 25V	±30V	-	230W (Tc)	900 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW12NK80Z	STMicroelectronics	MOSFET N-CH 800V 10.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock36,012	MOSFET (Metal Oxide)	800V	10.5A (Tc)	10V	4.5V @ 100µA	87nC @ 10V	2620pF @ 25V	±30V	-	190W (Tc)	750 mOhm @ 5.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP40N65M2	STMicroelectronics	MOSFET N-CH 650V 32A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,712	MOSFET (Metal Oxide)	650V	32A (Tc)	10V	4V @ 250µA	56.5nC @ 10V	2355pF @ 100V	±25V	-	250W (Tc)	99 mOhm @ 16A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STB40N60M2	STMicroelectronics	MOSFET N-CH 600V 34A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,576	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	57nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	88 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP8NK100Z	STMicroelectronics	MOSFET N-CH 1000V 6.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock95,604	MOSFET (Metal Oxide)	1000V	6.5A (Tc)	10V	4.5V @ 100µA	102nC @ 10V	2180pF @ 25V	±30V	-	160W (Tc)	1.85 Ohm @ 3.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP46NF30	STMicroelectronics	MOSFET N CH 300V 42A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,072	MOSFET (Metal Oxide)	300V	42A (Tc)	10V	4V @ 250µA	90nC @ 10V	3200pF @ 25V	±20V	-	300W (Tc)	75 mOhm @ 17A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
STP26NM60N	STMicroelectronics	MOSFET N-CH 600V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock243,672	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	60nC @ 10V	1800pF @ 50V	±30V	-	140W (Tc)	165 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB11NM80T4	STMicroelectronics	MOSFET N-CH 800V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock205,272	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	43.6nC @ 10V	1630pF @ 25V	±30V	-	150W (Tc)	400 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF5NK100Z	STMicroelectronics	MOSFET N-CH 1KV 3.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock74,508	MOSFET (Metal Oxide)	1000V	3.5A (Tc)	10V	4.5V @ 100µA	59nC @ 10V	1154pF @ 25V	±30V	-	30W (Tc)	3.7 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP40NF20	STMicroelectronics	MOSFET N-CH 200V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock405,468	MOSFET (Metal Oxide)	200V	40A (Tc)	10V	4V @ 250µA	75nC @ 10V	2500pF @ 25V	±20V	-	160W (Tc)	45 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STV300NH02L	STMicroelectronics	MOSFET N-CH 24V 280A POWERSO-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	Package: PowerSO-10 Exposed Bottom Pad	Stock12,312	MOSFET (Metal Oxide)	24V	200A (Tc)	10V, 5V	2V @ 250µA	109nC @ 10V	7055pF @ 15V	±20V	-	300W (Tc)	1 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STF13NM60N	STMicroelectronics	MOSFET N-CH 600V 11A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock204,732	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	30nC @ 10V	790pF @ 50V	±25V	-	25W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW7NK90Z	STMicroelectronics	MOSFET N-CH 900V 5.8A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock21,804	MOSFET (Metal Oxide)	900V	5.8A (Tc)	10V	4.5V @ 100µA	60.5nC @ 10V	1350pF @ 25V	±30V	-	140W (Tc)	2 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,280	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	450 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP200NF04	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock410,688	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	210nC @ 10V	5100pF @ 25V	±20V	-	310W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF7N105K5	STMicroelectronics	MOSFET N-CH 1050V 4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,668	MOSFET (Metal Oxide)	1050V	4A (Tc)	10V	5V @ 100µA	17nC @ 10V	380pF @ 100V	±30V	-	25W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP80PF55	STMicroelectronics	MOSFET P-CH 55V 80A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock84,708	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	258nC @ 10V	5500pF @ 25V	±16V	-	300W (Tc)	18 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW28N65M2	STMicroelectronics	MOSFET N-CH 650V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,704	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	4V @ 250µA	35nC @ 10V	1440pF @ 100V	±25V	-	170W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STP80NF55L-06	STMicroelectronics	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock195,516	MOSFET (Metal Oxide)	55V	80A (Tc)	5V, 10V	1V @ 250µA	136nC @ 5V	4850pF @ 25V	±16V	-	300W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW75NF20	STMicroelectronics	MOSFET N-CH 200V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock36,444	MOSFET (Metal Oxide)	200V	75A (Tc)	10V	4V @ 250µA	84nC @ 10V	3260pF @ 25V	±20V	-	190W (Tc)	34 mOhm @ 37A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW20NK50Z	STMicroelectronics	MOSFET N-CH 500V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock95,688	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4.5V @ 100µA	119nC @ 10V	2600pF @ 25V	±30V	-	190W (Tc)	270 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP30NF20	STMicroelectronics	MOSFET N-CH 200V 30A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock431,244	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	38nC @ 10V	1597pF @ 25V	±20V	-	125W (Tc)	75 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF20NF20	STMicroelectronics	MOSFET N-CH 200V 18A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock520,392	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	39nC @ 10V	940pF @ 25V	±20V	-	30W (Tc)	125 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD7N80K5	STMicroelectronics	MOSFET N-CH 800V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock26,898	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	5V @ 100µA	13.4nC @ 10V	360pF @ 100V	±30V	-	110W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STP40NF10L	STMicroelectronics	MOSFET N-CH 100V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±17V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock710,016	MOSFET (Metal Oxide)	100V	40A (Tc)	5V, 10V	2.5V @ 250µA	64nC @ 5V	2300pF @ 25V	±17V	-	150W (Tc)	33 mOhm @ 20A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP75NF75	STMicroelectronics	MOSFET N-CH 75V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock834,156	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	160nC @ 10V	3700pF @ 25V	±20V	-	300W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP100N6F7	STMicroelectronics	MOSFET N-CH 60V 100A F7 TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock30,972	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 250µA	30nC @ 10V	1980pF @ 25V	±20V	-	125W (Tc)	5.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3