Page 41 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STB33N60M2
STMicroelectronics

MOSFET N-CH 600V 26A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,776
STL18N60M2
STMicroelectronics

MOSFET N-CH 600V 9A POWERFLAT

Package: 4-PowerFlat? HV

Stock3,840
STB160N75F3
STMicroelectronics

MOSFET N-CH 75V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock502,980
STB45N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 34A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,512
STL24N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.195 OHM TYP.,

Package: 8-PowerVDFN

Stock4,640
STH180N10F3-6
STMicroelectronics

MOSFET N-CH 100V 180A H2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock6,912
STL33N60M2
STMicroelectronics

MOSFET N-CH 600V 21.5A PWRFLAT88

Package: 8-PowerVDFN

Stock7,056
STL23NM50N
STMicroelectronics

MOSFET N-CH 500V 2.8A PWRFLT 8X8

Package: 4-PowerFlat? HV

Stock7,872
STH320N4F6-6
STMicroelectronics

MOSFET N-CH 40V 200A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock7,040
STH270N4F3-2
STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,088
STB15N80K5
STMicroelectronics

MOSFET N CH 800V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock9,624
STH320N4F6-2
STMicroelectronics

MOSFET N-CH 40V 200A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,168
STB45N40DM2AG
STMicroelectronics

MOSFET N-CH 400V 38A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,504
STB35N60DM2
STMicroelectronics

MOSFET N-CH 600V 28A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,376
STL16N65M5
STMicroelectronics

MOSFET N-CH 650V HV POWERFLAT

Package: 4-PowerFlat? HV

Stock288,000
STH400N4F6-6
STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock5,872
STH275N8F7-6AG
STMicroelectronics

MOSFET N-CH 80V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock7,568
STB13N80K5
STMicroelectronics

MOSFET N-CH 800V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,920
STH260N6F6-6
STMicroelectronics

MOSFET N-CH 60V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock3,312
STH275N8F7-2AG
STMicroelectronics

MOSFET N-CH 80V 180A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,408

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STB33N60M2	STMicroelectronics	MOSFET N-CH 600V 26A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,776	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	4V @ 250µA	45.5nC @ 10V	1781pF @ 100V	±25V	-	190W (Tc)	125 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL18N60M2	STMicroelectronics	MOSFET N-CH 600V 9A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 308 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock3,840	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	791pF @ 100V	±25V	-	57W (Tc)	308 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (5x6)	4-PowerFlat? HV
STB160N75F3	STMicroelectronics	MOSFET N-CH 75V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock502,980	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 250µA	85nC @ 10V	6750pF @ 25V	±20V	-	330W (Tc)	4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB45N60DM2AG	STMicroelectronics	MOSFET N-CH 600V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,512	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	5V @ 250µA	56nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	90 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL24N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.195 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,640	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	5V @ 250µA	29nC @ 10V	1055pF @ 100V	±25V	-	125W (Tc)	220 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
STH180N10F3-6	STMicroelectronics	MOSFET N-CH 100V 180A H2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6665pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,912	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4V @ 250µA	114.6nC @ 10V	6665pF @ 25V	±20V	-	315W (Tc)	4.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
STL33N60M2	STMicroelectronics	MOSFET N-CH 600V 21.5A PWRFLAT88 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 10.75A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,056	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 250µA	47nC @ 10V	1700pF @ 100V	±25V	-	190W (Tc)	135 mOhm @ 10.75A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
STL23NM50N	STMicroelectronics	MOSFET N-CH 500V 2.8A PWRFLT 8X8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock7,872	MOSFET (Metal Oxide)	500V	2.8A (Ta), 14A (Tc)	10V	4V @ 250µA	45nC @ 10V	1330pF @ 50V	±25V	-	3W (Ta), 125W (Tc)	210 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STH320N4F6-6	STMicroelectronics	MOSFET N-CH 40V 200A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,040	MOSFET (Metal Oxide)	40V	200A (Tc)	10V	4V @ 250µA	240nC @ 10V	13800pF @ 15V	±20V	-	300W (Tc)	1.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
STH270N4F3-2	STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,088	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4V @ 250µA	150nC @ 10V	7400pF @ 25V	±20V	-	300W (Tc)	1.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
STB15N80K5	STMicroelectronics	MOSFET N CH 800V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 375 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,624	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 100µA	32nC @ 10V	1100pF @ 100V	±30V	-	190W (Tc)	375 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH320N4F6-2	STMicroelectronics	MOSFET N-CH 40V 200A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,168	MOSFET (Metal Oxide)	40V	200A (Tc)	10V	4V @ 250µA	240nC @ 10V	13800pF @ 15V	±20V	-	300W (Tc)	1.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
STB45N40DM2AG	STMicroelectronics	MOSFET N-CH 400V 38A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,504	MOSFET (Metal Oxide)	400V	38A (Tc)	10V	5V @ 250µA	56nC @ 10V	2600pF @ 100V	±25V	-	250W (Tc)	72 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB35N60DM2	STMicroelectronics	MOSFET N-CH 600V 28A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,376	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	5V @ 250µA	54nC @ 10V	2400pF @ 100V	±25V	-	210W (Tc)	110 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL16N65M5	STMicroelectronics	MOSFET N-CH 650V HV POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock288,000	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	31nC @ 10V	1250pF @ 100V	±25V	-	3W (Ta), 90W (Tc)	299 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STH400N4F6-6	STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 404nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock5,872	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4.5V @ 250µA	404nC @ 10V	20500pF @ 25V	±20V	-	300W (Tc)	1.15 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
STH275N8F7-6AG	STMicroelectronics	MOSFET N-CH 80V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,568	MOSFET (Metal Oxide)	80V	180A (Tc)	10V	4.5V @ 250µA	193nC @ 10V	13600pF @ 50V	±20V	-	315W (Tc)	2.1 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
STB13N80K5	STMicroelectronics	MOSFET N-CH 800V 12A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,920	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 100µA	29nC @ 10V	870pF @ 100V	±30V	-	190W (Tc)	450 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH260N6F6-6	STMicroelectronics	MOSFET N-CH 60V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock3,312	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 250µA	183nC @ 10V	11800pF @ 25V	±20V	-	300W (Tc)	2.4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
STH275N8F7-2AG	STMicroelectronics	MOSFET N-CH 80V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,408	MOSFET (Metal Oxide)	80V	180A (Tc)	10V	4.5V @ 250µA	193nC @ 10V	13600pF @ 50V	±20V	-	315W (Tc)	2.1 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab) Variant
STL18N65M5	STMicroelectronics	MOSFET N-CH 650V POWERFLAT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,736	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	57W (Tc)	240 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STB75NF20	STMicroelectronics	MOSFET N-CH 200V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,768	MOSFET (Metal Oxide)	200V	75A (Tc)	10V	4V @ 250µA	84nC @ 10V	3260pF @ 25V	±20V	-	190W (Tc)	34 mOhm @ 37A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB13NM60N	STMicroelectronics	MOSFET N-CH 600V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock91,716	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	30nC @ 10V	790pF @ 50V	±25V	-	90W (Tc)	360 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB23N80K5	STMicroelectronics	MOSFET N-CH 800V 16A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,096	MOSFET (Metal Oxide)	800V	16A (Tc)	10V	5V @ 100µA	33nC @ 10V	1000pF @ 100V	±30V	-	190W (Tc)	280 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD15N65M5	STMicroelectronics	MOSFET N CH 650V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,456	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	5V @ 250µA	22nC @ 10V	816pF @ 100V	±25V	-	85W (Tc)	340 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB34N50DM2AG	STMicroelectronics	MOSFET N-CH 500V 26A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,824	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	5V @ 250µA	44nC @ 10V	1850pF @ 100V	±25V	-	190W (Tc)	120 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB23NM50N	STMicroelectronics	MOSFET N-CH 500V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,420	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4V @ 250µA	45nC @ 10V	1330pF @ 50V	±25V	-	125W (Tc)	190 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB31N65M5	STMicroelectronics	MOSFET N-CH 650V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1865pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,032	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5V @ 250µA	45nC @ 10V	1865pF @ 100V	±25V	-	150W (Tc)	148 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB