Sanken Products

MOSFET N-CH 60V 85A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 90.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 135W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 55A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MOSFET N-CH 60V 57A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 650µA
• Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 28.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MOSFET N-CH 100V 7A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 55.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
• Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 20.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerTDFN

MOSFET N-CH 100V 19A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 350µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 47.7 mOhm @ 9.3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

MOSFET 3N/3P-CH 250V 2A 12-SIP

• FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 2A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: 12-SIP, Exposed Tab
• Supplier Device Package: 12-SIP

TRANS NPN DARL 150V 17A MT200

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 17A
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 10A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10A, 4V
• Power - Max: 200W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 3-ESIP
• Supplier Device Package: MT-200

TRANS NPN 260V 15A TO-3P

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 260V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 4V
• Power - Max: 160W
• Frequency - Transition: 60MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3P

TRANS PNP 180V 15A TO-3P

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 180V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
• Power - Max: 130W
• Frequency - Transition: 40MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

TRANS NPN 400V 18A TO3P

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 18A
• Voltage - Collector Emitter Breakdown (Max): 400V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2A, 10A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V
• Power - Max: 130W
• Frequency - Transition: 10MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

TRANS 2NPN DARL 60V 6A

• Transistor Type: 2 NPN Darlington (Dual)
• Current - Collector (Ic) (Max): 6A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 15mA, 1.5A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 700 @ 1A, 1V
• Power - Max: 3.2W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 10-SIP
• Supplier Device Package: 10-SIP

TRIAC 600V 12A

• Triac Type: Standard
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 12A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
• Current - Gate Trigger (Igt) (Max): 30mA
• Current - Hold (Ih) (Max): -
• Configuration: Single
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

DIODE GEN PURP 1KV 1.5A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 2V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE SCHOTTKY SMD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, J-Lead
• Supplier Device Package: 2-SMD
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 800V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 1KV 400MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 400mA
• Voltage - Forward (Vf) (Max) @ If: 4V @ 400mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 400V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE SCHOTTKY 90V 2A SJP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, J-Lead
• Supplier Device Package: SJP
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE SCHOTTKY 40V 2A SJP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, J-Lead
• Supplier Device Package: 2-SMD
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 600V 700MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 3V @ 800mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 600V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 600V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE ARRAY SCHOTTKY 60V TO220F

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 8mA @ 60V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F

IC REG BUCK ADJ 3A SYNC 8HSOP

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 7V
• Voltage - Input (Max): 43V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 24V
• Current - Output: 3A
• Frequency - Switching: 300kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 8-HSOP

IC REG BUCK 12V 3A TO-220F-5

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 15V
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 12V
• Voltage - Output (Max): -
• Current - Output: 3A
• Frequency - Switching: 60kHz
• Synchronous Rectifier: No
• Operating Temperature: -30°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack (Formed Leads)
• Supplier Device Package: TO-220F-5

IC MOTOR DRIVER PAR 18ZIP

• Motor Type - Stepper: Unipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4, 1/8
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 10 V ~ 44 V
• Voltage - Load: 10 V ~ 44 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 18-SIP (Bent and Staggered Leads)
• Supplier Device Package: 18-ZIP

IC REG PWM CONV AC/DC

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

AC/DC CONVERTER 36V 150W

• Type: Open Frame
• Number of Outputs: 1
• Voltage - Input: 85 ~ 264 VAC
• Voltage - Output 1: 36V
• Voltage - Output 2: -
• Voltage - Output 3: -
• Voltage - Output 4: -
• Current - Output (Max): 4.2A
• Power (Watts): 150W
• Applications: ITE (Commercial)
• Voltage - Isolation: 3kV (3000V)
• Efficiency: 91%
• Operating Temperature: -10°C ~ 70°C
• Features: Adjustable Output, Universal Input
• Mounting Type: Chassis Mount
• Size / Dimension: 6.30" L x 2.95" W x 1.46" H (160.0mm x 75.0mm x 37.0mm)

DC/DC CONVERTER 3-16V 32W TO220

• Type: Non-Isolated PoL Module
• Number of Outputs: 1
• Voltage - Input (Min): 8V
• Voltage - Input (Max): 30V
• Voltage - Output 1: 3 ~ 16 V
• Voltage - Output 2: -
• Voltage - Output 3: -
• Voltage - Output 4: -
• Current - Output (Max): 2A
• Power (Watts): 32W
• Voltage - Isolation: -
• Applications: ITE (Commercial)
• Features: OCP, OTP, OVP, UVLO
• Operating Temperature: -20°C ~ 125°C
• Efficiency: 95%
• Mounting Type: Through Hole
• Package / Case: TO-220-8 (Formed Leads), 5 Leads
• Size / Dimension: 0.39" L x 0.17" W x 0.67" H (10.0mm x 4.3mm x 16.9mm)
• Supplier Device Package: TO-220F-8
• Control Features: -