|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 47V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 47V
- Tolerance: ±6.38%
- Power - Max: 1W
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 36V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock4,256 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 9.1V, 1000MW, %, S
- Voltage - Zener (Nom) (Vz): 9.05V
- Tolerance: ±6.07%
- Power - Max: 1W
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 5V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock3,840 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 33V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 33V
- Tolerance: ±6.06%
- Power - Max: 1W
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 24V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock2,496 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 16V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 16.2V
- Tolerance: ±5.55%
- Power - Max: 1W
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 12V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock3,200 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 150V, 3000MW, 5%,
- Voltage - Zener (Nom) (Vz): 150V
- Tolerance: ±5%
- Power - Max: 3W
- Impedance (Max) (Zzt): 600 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 114V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
|
Package: DO-214AA, SMB |
Stock4,592 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 10V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 10V
- Tolerance: ±5%
- Power - Max: 1.25W
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 7.6V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
|
Package: DO-214AC, SMA |
Stock6,640 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 12V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 12V
- Tolerance: ±5.41%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 3µA @ 9.1V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock7,056 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 6.8V, 410MW, 2%, S
- Voltage - Zener (Nom) (Vz): 6.8V
- Tolerance: ±2%
- Power - Max: 410mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 4V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
|
Package: SOD-123 |
Stock4,192 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 8A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
|
Package: 4-SIP, TS-6P |
Stock7,872 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 2A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: DBL
|
Package: 4-DIP (0.300", 7.62mm) |
Stock5,360 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 2A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Current - Reverse Leakage @ Vr: 2µA @ 1200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
|
Package: 4-SMD, Gull Wing |
Stock6,944 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ZENER 130V 3W DO214AA
- Voltage - Zener (Nom) (Vz): 130 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 450 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 98.8 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
10A, 1000V, STANDARD BRIDGE RECT
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 10 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
|
Package: - |
Stock4,500 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock4,800 |
|
|
|
Taiwan Semiconductor Corporation |
150V, 24A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.6W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
SOD-523F, 200MW, 5%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 4.7 V
- Tolerance: ±5%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock9,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 150V 8A ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DO-35, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 4.3 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 75 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 1A DBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Current - Reverse Leakage @ Vr: 2 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: DBL
|
Package: - |
Stock13,131 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock21,000 |
|
|
|
Taiwan Semiconductor Corporation |
25NS, 8A, 600V, ULTRA FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 58pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock9,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ZENER 27V 500MW 0805
- Voltage - Zener (Nom) (Vz): 27 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 20 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A TO220AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock2,976 |
|
|
|
Taiwan Semiconductor Corporation |
50A, 1000V, STANDARD BRIDGE RECT
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 50 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
|
Package: - |
Stock585 |
|
|
|
Taiwan Semiconductor Corporation |
SOD-123, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 2 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 15A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock189 |
|