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Taiwan Semiconductor Corporation |
DIODE, ZENER, 24V, 3000MW, 5%, D
- Voltage - Zener (Nom) (Vz): 24V
- Tolerance: ±5%
- Power - Max: 3W
- Impedance (Max) (Zzt): 19 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 18.2V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
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Package: DO-214AA, SMB |
Stock7,712 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 36V, 1000MW, 5%, D
- Voltage - Zener (Nom) (Vz): 36V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 27.4V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock4,304 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 36V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 36V
- Tolerance: ±5%
- Power - Max: 1.25W
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 27.4V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: DO-214AC, SMA |
Stock7,936 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 1000MW, %, DO
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5%
- Power - Max: 1.25W
- Impedance (Max) (Zzt): 95 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 38.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: DO-214AC, SMA |
Stock6,112 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 5.1V, 200MW, 5%, S
- Voltage - Zener (Nom) (Vz): 5.1V
- Tolerance: ±5%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 1.5V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: SC-79, SOD-523 |
Stock4,480 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 12V, 500MW, 2%, QM
- Voltage - Zener (Nom) (Vz): 12V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 9.1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
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Package: SOD-80 Variant |
Stock7,408 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 18.49V, 500MW, %,
- Voltage - Zener (Nom) (Vz): 18.49V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 55 Ohms
- Current - Reverse Leakage @ Vr: 200nA @ 15V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: DO-204AG, DO-34, Axial |
Stock4,064 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 8.2V, 500MW, 5%, D
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 8 Ohms
- Current - Reverse Leakage @ Vr: 3µA @ 6.5V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: 100°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock7,040 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 3V, 500MW, 5%, DO-
- Voltage - Zener (Nom) (Vz): 3V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 29 Ohms
- Current - Reverse Leakage @ Vr: 50µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: 100°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock7,696 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 12V, 500MW, 2%, DO
- Voltage - Zener (Nom) (Vz): 12V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 9.1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock6,784 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 4A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock4,592 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 175pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (TO-3P)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,700 |
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Taiwan Semiconductor Corporation |
SUB SMA, 800MW, 6%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 11 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 54pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock17,970 |
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Taiwan Semiconductor Corporation |
SUB SMA, 1000MW, 6%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 62 V
- Tolerance: ±6.45%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 47 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 600V 500MA MBS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 500 mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-BESOP (0.173", 4.40mm Width)
- Supplier Device Package: MBS
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
DIODE ZENER 5W DO214AB
- Voltage - Zener (Nom) (Vz): 43 V
- Tolerance: ±5%
- Power - Max: 5 W
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 16A/104A PDFN56U
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock8,847 |
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Taiwan Semiconductor Corporation |
DO-34, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 6.8 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
1A, 40V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 69pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: Thin SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 29A/194A 8PDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,910 |
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Taiwan Semiconductor Corporation |
DIODE ARRAY SCHOT 10A TO263AB
- Diode Configuration: -
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock57,030 |
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Taiwan Semiconductor Corporation |
30V, 58A, SINGLE N-CHANNEL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.92W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.15x3.1)
- Package / Case: 8-PowerWDFN
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
100MA 5V LOW QUIESCENT CURRENT L
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 35V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.1V @ 100mA
- Current - Output: 100mA
- Current - Quiescent (Iq): 5 mA
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 4A TS4K
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS4K
- Supplier Device Package: TS4K
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Package: - |
Stock8,871 |
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