|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 43V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 43V
- Tolerance: ±6.97%
- Power - Max: 1W
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 33V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock6,192 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 3000MW, 5%, A
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5%
- Power - Max: 3W
- Impedance (Max) (Zzt): 70 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 38.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
|
Package: DO-214AA, SMB |
Stock3,200 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 7.5V, 1000MW, %, A
- Voltage - Zener (Nom) (Vz): 7.45V
- Tolerance: ±6.04%
- Power - Max: 1W
- Impedance (Max) (Zzt): 2 Ohms
- Current - Reverse Leakage @ Vr: 50µA @ 3V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock3,520 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 82V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 82V
- Tolerance: ±6.09%
- Power - Max: 1W
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 62V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock5,216 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 150V, 1000MW, 5%,
- Voltage - Zener (Nom) (Vz): 150V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 1000 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 114V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
|
Package: DO-204AL, DO-41, Axial |
Stock5,120 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 3.3V, 1300MW, 5%,
- Voltage - Zener (Nom) (Vz): 3.3V
- Tolerance: ±5%
- Power - Max: 1.3W
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 40µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
|
Package: DO-204AL, DO-41, Axial |
Stock2,288 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 11V, 500MW, 5%, 12
- Voltage - Zener (Nom) (Vz): 11V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 8.2V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
|
Package: 1206 (3216 Metric) |
Stock3,616 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 8.2V, 500MW, 5%, Q
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 6.2V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
|
Package: SOD-80 Variant |
Stock3,248 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 33V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 33V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 24V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock2,736 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 40A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC40-M
- Supplier Device Package: GBPC40-M
|
Package: 4-Square, GBPC40-M |
Stock4,048 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 4A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
|
Package: 4-SIP, GBL |
Stock3,392 |
|
|
|
Taiwan Semiconductor Corporation |
DO-204AL (DO-41), 1000MW, 5%, SM
- Voltage - Zener (Nom) (Vz): 47 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 35.8 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DO-204AL (DO-41), 1000MW, 5%, SM
- Voltage - Zener (Nom) (Vz): 6.2 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 2 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 3 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
SOD-123, 350MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 10 V
- Tolerance: ±5%
- Power - Max: 350 mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 200 nA @ 7 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 13pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock20,844 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ZENER 20V 3W DO214AA
- Voltage - Zener (Nom) (Vz): 20 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 14 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock17,124 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ZENER 5W DO214AB
- Voltage - Zener (Nom) (Vz): 17 V
- Tolerance: ±5%
- Power - Max: 5 W
- Impedance (Max) (Zzt): 3 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 20A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A MELF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CH 100V 22A TO220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
QMMELF, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 8.2 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: QMMELF
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 20A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DO-34, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 2.11 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 100 Ohms
- Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 2A KBPF
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPF
- Supplier Device Package: KBPF
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
60V, 25A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251S (IPAK SL)
- Package / Case: TO-251-3 Stub Leads, IPAK
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ZENER 11V 3W DO214AA
- Voltage - Zener (Nom) (Vz): 11 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 5.5 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|