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Taiwan Semiconductor Corporation |
DIODE, ZENER, 12V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 12V
- Tolerance: ±5.41%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 3µA @ 9.1V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock5,520 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 15V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 15V
- Tolerance: ±6%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 11V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock2,480 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 24V, 200MW, 5%, 10
- Voltage - Zener (Nom) (Vz): 24V
- Tolerance: ±5%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 18V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 1005 (2512 Metric)
- Supplier Device Package: 1005
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Package: 1005 (2512 Metric) |
Stock7,664 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 20V, 1300MW, 5%, D
- Voltage - Zener (Nom) (Vz): 20V
- Tolerance: ±5%
- Power - Max: 1.3W
- Impedance (Max) (Zzt): 24 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 15V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock6,976 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 20V, 500MW, 5%, SO
- Voltage - Zener (Nom) (Vz): 20V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 55 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 14V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: SOD-123F |
Stock3,664 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 11V, 500MW, 5%, DO
- Voltage - Zener (Nom) (Vz): 11V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 22 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 8.4V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: 100°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock4,800 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 2.7V, 500MW, 5%, M
- Voltage - Zener (Nom) (Vz): 2.7V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock5,584 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, HIGH EFFICIENT
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
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Package: 4-SMD, Gull Wing |
Stock4,160 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 1.5A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Current - Reverse Leakage @ Vr: 2µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
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Package: 4-SMD, Gull Wing |
Stock2,912 |
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Taiwan Semiconductor Corporation |
SOT-23, 300MW, 5%, SMALL SIGNAL
- Configuration: 1 Pair Common Anode
- Voltage - Zener (Nom) (Vz): 20 V
- Tolerance: ±5%
- Power - Max: 300 mW
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 15 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
50NS, 2A, 400V, HIGH EFFICIENT R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock42,000 |
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Taiwan Semiconductor Corporation |
500NS, 2A, 800V, FAST RECOVERY R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,000 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 300 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DO-35, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 3 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 12V 5W DO214AB
- Voltage - Zener (Nom) (Vz): 12 V
- Tolerance: ±5%
- Power - Max: 5 W
- Impedance (Max) (Zzt): 3 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 9.1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
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Package: - |
Stock8,970 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 15A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 93pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 5A SMPC4.6U
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 45 V
- Capacitance @ Vr, F: 589pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.6U
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock15,000 |
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Taiwan Semiconductor Corporation |
SUB SMA, 1000MW, 6%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 200 V
- Tolerance: ±6%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 750 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
600V, 38A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 350MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 7.5 V
- Tolerance: ±5%
- Power - Max: 350 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
1.2A, 1000V, STANDARD RECOVERY R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock60,000 |
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Taiwan Semiconductor Corporation |
75NS, 1.5A, 200V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock45,000 |
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Taiwan Semiconductor Corporation |
DIODE BRIDGE 8A 200V KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200 V
- Current - Average Rectified (Io): 8 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
2A, 150V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
TO-92, 30V, 0.8A, NPN BIPOLAR TR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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