|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 170V, 2000MW, %, A
- Voltage - Zener (Nom) (Vz): 170V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 675 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 130.4V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
|
Package: DO-204AC, DO-15, Axial |
Stock4,256 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 15V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 15V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 11V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD123W
|
Package: SOD-123W |
Stock3,680 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 18V, 500MW, 2%, QM
- Voltage - Zener (Nom) (Vz): 18V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 13V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
|
Package: SOD-80 Variant |
Stock4,656 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 47V, 500MW, 2%, QM
- Voltage - Zener (Nom) (Vz): 47V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 110 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 35V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
|
Package: SOD-80 Variant |
Stock4,912 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 4.7V, 500MW, 2%, D
- Voltage - Zener (Nom) (Vz): 4.7V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
|
Package: DO-204AH, DO-35, Axial |
Stock5,264 |
|
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 25A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
|
Package: 4-SIP, TS-6P |
Stock6,192 |
|
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 2A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Current - Reverse Leakage @ Vr: 2µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
|
Package: 4-SMD, Gull Wing |
Stock3,200 |
|
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 1.5A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Current - Reverse Leakage @ Vr: 2µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
|
Package: 4-SMD, Gull Wing |
Stock6,080 |
|
|
|
|
Taiwan Semiconductor Corporation |
HALL EFFECT SWITCH, LATCH, 2.5 -
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,754 |
|
|
|
|
Taiwan Semiconductor Corporation |
SOT-363, 30V, 0.2A, SCHOTTKY DIO
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE ARR SCHOTT 100V ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE ZENER 180V 2W DO204AC
- Voltage - Zener (Nom) (Vz): 180 V
- Tolerance: ±5%
- Power - Max: 2 W
- Impedance (Max) (Zzt): 725 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock18,000 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock45,000 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 30V 200MA SOT363
- Diode Configuration: 2 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock18,000 |
|
|
|
|
Taiwan Semiconductor Corporation |
3A, 60V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 15A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 93pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock9,000 |
|
|
|
|
Taiwan Semiconductor Corporation |
1206 (CERAMICS), 500MW, 5%, SMAL
- Voltage - Zener (Nom) (Vz): 2.4 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 50 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 54pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock2,982 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock7,500 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 300 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock18,000 |
|
|
|
|
Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 2%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 11 V
- Tolerance: ±2%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 90 nA @ 8 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
|
Package: - |
Stock30,000 |
|
|
|
|
Taiwan Semiconductor Corporation |
1206 (CERAMICS), 75V, 0.15A, SWI
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock1,965 |
|
|
|
|
Taiwan Semiconductor Corporation |
QMMELF, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 56 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 135 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 42 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: QMMELF
|
Package: - |
Request a Quote |
|
|
|
|
Taiwan Semiconductor Corporation |
25NS, 4A, 200V, ULTRA FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 200 V
- Capacitance @ Vr, F: 71pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.6U
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock18,000 |
|
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 200°C
|
Package: - |
Request a Quote |
|
0
Login/Register
BOM
Cart
