|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5.88%
- Power - Max: 1W
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 39V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock5,840 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 190V, 2000MW, %, D
- Voltage - Zener (Nom) (Vz): 190V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 825 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 144.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
|
Package: DO-204AC, DO-15, Axial |
Stock3,472 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 47V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 47V
- Tolerance: ±6.38%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 36V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock2,272 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 68V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 68V
- Tolerance: ±5.88%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 51V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock3,216 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 13V, 1000MW, 5%, A
- Voltage - Zener (Nom) (Vz): 13V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 95 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 38.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
|
Package: DO-204AL, DO-41, Axial |
Stock2,240 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 160V, 1000MW, %, D
- Voltage - Zener (Nom) (Vz): 160V
- Tolerance: ±5%
- Power - Max: 1.25W
- Impedance (Max) (Zzt): 1100 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 121.6V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
|
Package: DO-214AC, SMA |
Stock2,288 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 6.2V, 500MW, 5%, Q
- Voltage - Zener (Nom) (Vz): 6.2V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 2V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
|
Package: SOD-80 Variant |
Stock2,240 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 4.7V, 500MW, 5%, Q
- Voltage - Zener (Nom) (Vz): 4.7V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
|
Package: SOD-80 Variant |
Stock2,048 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 5.1V, 500MW, 5%, Q
- Voltage - Zener (Nom) (Vz): 5.1V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 35 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
|
Package: SOD-80 Variant |
Stock7,856 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 25A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
|
Package: 4-SIP, TS-6P |
Stock6,272 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A ITO220AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock3,000 |
|
|
|
Taiwan Semiconductor Corporation |
0603 (CERAMICS), 75V, 0.1A, SWIT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: 0603
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
TRANS NPN 400V 1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ARRAY GP 100V 8A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 24A/157A 8PDFNU
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 157A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock15,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 100V 10A TO263AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ARRAY GP 800V 16A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io) (per Diode): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: - |
Stock2,970 |
|
|
|
Taiwan Semiconductor Corporation |
20NS, 2A, 100V, ULTRA FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock18,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock17,994 |
|
|
|
Taiwan Semiconductor Corporation |
35NS, 5A, 600V, SUPER FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 71pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock8,970 |
|
|
|
Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 2%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 4.7 V
- Tolerance: ±2%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock21,000 |
|
|
|
Taiwan Semiconductor Corporation |
50NS, 16A, 300V, HIGH EFFICIENT
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io) (per Diode): 16A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 300 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (TO-3P)
|
Package: - |
Stock2,700 |
|
|
|
Taiwan Semiconductor Corporation |
SOD-123, 350MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±5%
- Power - Max: 350 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 6 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
SOD-123, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 3 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 800 nA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 8A TS-6P
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 8 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
|
Package: - |
Stock3,600 |
|
|
|
Taiwan Semiconductor Corporation |
1.2A, 800V, STANDARD RECOVERY RE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock60,000 |
|
|
|
Taiwan Semiconductor Corporation |
2A, 50V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|