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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock5,568 |
|
100mA | 50V | 10k | 4.7k | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 150MW VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Package: SOT-723 |
Stock3,232 |
|
100mA | 50V | 22k | 22k | 70 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 100MW SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock2,672 |
|
100mA | 50V | 47k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock4,992 |
|
100mA | 50V | 4.7k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock4,320 |
|
100mA | 50V | 4.7k | 4.7k | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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Toshiba Semiconductor and Storage |
TRANS NPN PREBIAS 50V 100MA VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Package: SOT-723 |
Stock2,752 |
|
100mA | 50V | 10k | 4.7k | 30 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-723 | VESM |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock3,232 |
|
100mA | 50V | 10k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | - | 150mW | - | - | - |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.15W VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Package: SOT-723 |
Stock5,904 |
|
100mA | 50V | 47k | 47k | 80 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock5,440 |
|
100mA | 50V | 10k | 10k | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock5,776 |
|
100mA | 50V | 47k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.2W S-MINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,840 |
|
100mA | 50V | 47k | 10k | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock4,624 |
|
80mA | 50V | 10k | 10k | 50 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock2,688 |
|
80mA | 50V | 10k | 47k | 80 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock5,216 |
|
80mA | 50V | 47k | 22k | 70 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock6,592 |
|
80mA | 50V | 22k | - | 120 @ 1mA, 5V | 150mV @ 250µA, 5mA | 100nA (ICBO) | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock6,016 |
|
80mA | 50V | 47k | - | 120 @ 1mA, 5V | 150mV @ 250µA, 5mA | 100nA (ICBO) | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock5,456 |
|
80mA | 50V | 47k | - | 120 @ 1mA, 5V | 150mV @ 250µA, 5mA | 100nA (ICBO) | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.2W S-MINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,136 |
|
100mA | 50V | 22k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock6,064 |
|
100mA | 50V | 22k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock5,200 |
|
100mA | 50V | 47k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock3,280 |
|
100mA | 50V | 1k | 10k | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock7,920 |
|
100mA | 50V | 4.7k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock3,808 |
|
100mA | 50V | 22k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock2,784 |
|
100mA | 50V | 47k | 10k | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock3,760 |
|
100mA | 50V | 10k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock5,920 |
|
100mA | 50V | 47k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock7,520 |
|
100mA | 50V | 10k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock4,736 |
|
100mA | 50V | 47k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |