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Toshiba Semiconductor and Storage |
TRANS NPN 450V 8A TO220NIS
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock6,288 |
|
8A | 450V | 1V @ 640mA, 3.2A | 100µA (ICBO) | 14 @ 1A, 5V | 2W | - | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 5A PW-MOLD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,808 |
|
5A | 50V | 400mV @ 150mA, 3A | 1µA (ICBO) | 120 @ 1A, 1V | 1W | 120MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 5A 2-7B1A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,736 |
|
5A | 50V | 400mV @ 150mA, 3A | 1µA (ICBO) | 70 @ 1A, 1V | 1W | 120MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD |
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Toshiba Semiconductor and Storage |
TRANS NPN 150V 0.05A TO-92MOD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock3,376 |
|
50mA | 150V | 1V @ 1mA, 10mA | 100nA (ICBO) | 80 @ 10mA, 5V | 800mW | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
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Toshiba Semiconductor and Storage |
TRANS NPN 150V 0.05A TO-92MOD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,064 |
|
50mA | 150V | 1V @ 1mA, 10mA | 100nA (ICBO) | 80 @ 10mA, 5V | 800mW | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 10A TO220NIS
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 45MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock6,496 |
|
10A | 50V | 400mV @ 250mA, 5A | 1µA (ICBO) | 120 @ 1A, 1V | 2W | 45MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 5A PW-MOLD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
- Power - Max: 1W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,048 |
|
5A | 50V | 400mV @ 150mA, 3A | 1µA (ICBO) | 120 @ 1A, 1V | 1W | 60MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD |
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|
Toshiba Semiconductor and Storage |
TRANS PNP 20V 5A PW-MOLD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock74,520 |
|
5A | 20V | 1V @ 100mA, 4A | 100nA (ICBO) | 160 @ 500mA, 2V | 1W | 170MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,376 |
|
150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 150mW | 80MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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Toshiba Semiconductor and Storage |
TRANS PNP 160V 18A TO-3PL
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 18A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 180W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
|
Package: TO-3PL |
Stock6,304 |
|
18A | 160V | 2V @ 900mA, 9A | 1µA (ICBO) | 80 @ 1A, 5V | 180W | 30MHz | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) |
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Toshiba Semiconductor and Storage |
TRANS NPN 160V 18A TO-3PL
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 18A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 180W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
|
Package: TO-3PL |
Stock5,424 |
|
18A | 160V | 2V @ 900mA, 9A | 1µA (ICBO) | 80 @ 1A, 5V | 180W | 30MHz | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) |
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Toshiba Semiconductor and Storage |
TRANS NPN 375V 2A PW MOLD2
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 375V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
- Power - Max: 1.1W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PW-MOLD2
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,824 |
|
2A | 375V | 1V @ 62.5mA, 500mA | 10µA (ICBO) | 100 @ 300mA, 5V | 1.1W | - | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PW-MOLD2 |
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|
Toshiba Semiconductor and Storage |
TRANS NPN 285V 1.5A PW MOLD2
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 285V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
- Power - Max: 1.1W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PW-MOLD2
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,264 |
|
1.5A | 285V | 1V @ 62.5mA, 500mA | 10µA (ICBO) | 80 @ 1mA, 5V | 1.1W | - | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PW-MOLD2 |
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Toshiba Semiconductor and Storage |
TRANS PNP 180V 2A TO220NIS
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,560 |
|
2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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|
Toshiba Semiconductor and Storage |
TRANS NPN 230V 1A TO220NIS
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock3,664 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 100MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.1A CST3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock6,480 |
|
100mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 100mW | 60MHz | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 |
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Toshiba Semiconductor and Storage |
TRANS NPN 200V 0.05A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,112 |
|
50mA | 200V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 120 @ 10mA, 3V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
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|
Toshiba Semiconductor and Storage |
TRANS PNP 80V 3A PW-MOLD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 10W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,080 |
|
3A | 80V | 500mV @ 100mA, 1A | 100nA (ICBO) | 100 @ 500mA, 2V | 10W | 100MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD |
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Toshiba Semiconductor and Storage |
TRANS NPN 80V 3A PW MOLD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
- Power - Max: 10W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,304 |
|
3A | 80V | 500mV @ 100mA, 1A | 1µA (ICBO) | 180 @ 500mA, 2V | 10W | 150MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD |
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|
Toshiba Semiconductor and Storage |
TRANS PNP 30V 0.5A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 100mW
- Frequency - Transition: 200MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock5,152 |
|
500mA | 30V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 100mA, 1V | 100mW | 200MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
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|
Toshiba Semiconductor and Storage |
TRANSISTOR NPN 50V 150MA S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,256 |
|
150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 150mW | 80MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SSM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock6,000 |
|
150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SSM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock3,504 |
|
150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 160V 1.5A TO126N
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 10W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N
|
Package: TO-225AA, TO-126-3 |
Stock18,000 |
|
1.5A | 160V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 140 @ 100mA, 5V | 10W | 100MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126N |
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|
Toshiba Semiconductor and Storage |
TRANS PNP 30V 0.5A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 100mW
- Frequency - Transition: 200MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock4,928 |
|
500mA | 30V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 100mA, 1V | 100mW | 200MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 230V 15A TO-3PL
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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Package: TO-3P-3, SC-65-3 |
Stock5,648 |
|
15A | 230V | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 150W | 30MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) |
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Toshiba Semiconductor and Storage |
TRANS NPN 120V 0.1A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,880 |
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100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 350 @ 2mA, 6V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
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Toshiba Semiconductor and Storage |
TRANS NPN 230V 15A TO-3PN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 130W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
|
Package: TO-3P-3, SC-65-3 |
Stock8,448 |
|
15A | 230V | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 130W | 30MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) |