Page 32 - Toshiba Semiconductor and Storage Products - Transistors - FETs, MOSFETs - Single

2SK2995(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 30A TO-3PN

Package: TO-3P-3, SC-65-3

Stock5,440
2SK2993(TE24L,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SM

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,768
2SK2967(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 30A TO-3PN

Package: TO-3P-3, SC-65-3

Stock3,392
2SK2917(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 18A TO-3PN

Package: TO-3P-3, SC-65-3

Stock6,896
2SK2916(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 14A TO-3PN

Package: TO-3P-3, SC-65-3

Stock3,392
2SK2847(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO-3PN

Package: TO-3P-3, SC-65-3

Stock5,424
2SK2719(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 3A TO-3PN

Package: TO-3P-3, SC-65-3

Stock5,696
2SK2963(TE12L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 1A PW-MINI

Package: TO-243AA

Stock19,800
TPCF8B01(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.7A VS-8

Package: 8-SMD, Flat Lead

Stock3,328
2SJ377(TE16R1,NQ)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,928
TPCA8008-H(TE12L,Q
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4A 8-SOPA

Package: 8-PowerVDFN

Stock6,416
TPCA8010-H(TE12L,Q
Toshiba Semiconductor and Storage

MOSFET N-CH 200V 5.5A 8-SOPA

Package: 8-PowerVDFN

Stock4,096
TPCA8009-H(TE12L,Q
Toshiba Semiconductor and Storage

MOSFET N-CH 150V 7A 8-SOPA

Package: 8-PowerVDFN

Stock5,808
TK35N65W5,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO-247

Package: TO-247-3

Stock4,416
TK31J60W5,S1VQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO-3P(N)

Package: TO-3P-3, SC-65-3

Stock7,888
TK31A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO-220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock3,536
TK31E60W,S1VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 30.8A TO-220

Package: TO-220-3

Stock7,856
TK20N60W,S1VF
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-247

Package: TO-247-3

Stock3,344
TK31V60W,LVQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 30.8A 5DFN

Package: 4-VSFN Exposed Pad

Stock270,000
TK20E60W,S1VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-220

Package: TO-220-3

Stock6,224

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2SK2995(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 30A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,440	MOSFET (Metal Oxide)	250V	30A (Ta)	10V	3.5V @ 1mA	132nC @ 10V	5400pF @ 10V	±20V	-	90W (Tc)	68 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-3P(N)IS	TO-3P-3, SC-65-3
2SK2993(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 20A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,768	MOSFET (Metal Oxide)	250V	20A (Ta)	10V	3.5V @ 1mA	100nC @ 10V	4000pF @ 10V	±20V	-	100W (Tc)	105 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TO-220SM	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2967(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 30A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,392	MOSFET (Metal Oxide)	250V	30A (Ta)	10V	3.5V @ 1mA	132nC @ 10V	5400pF @ 10V	±20V	-	150W (Tc)	68 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
2SK2917(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 18A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,896	MOSFET (Metal Oxide)	500V	18A (Ta)	10V	4V @ 1mA	80nC @ 10V	3720pF @ 10V	±30V	-	90W (Tc)	270 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-3P(N)IS	TO-3P-3, SC-65-3
2SK2916(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 14A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,392	MOSFET (Metal Oxide)	500V	14A (Ta)	10V	4V @ 1mA	58nC @ 10V	2600pF @ 10V	±30V	-	80W (Tc)	400 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-3P(N)IS	TO-3P-3, SC-65-3
2SK2847(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 8A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,424	MOSFET (Metal Oxide)	900V	8A (Ta)	10V	4V @ 1mA	58nC @ 10V	2040pF @ 25V	±30V	-	85W (Tc)	1.4 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-3P(N)IS	TO-3P-3, SC-65-3
2SK2719(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 3A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,696	MOSFET (Metal Oxide)	900V	3A (Ta)	10V	4V @ 1mA	25nC @ 10V	750pF @ 25V	±30V	-	125W (Tc)	4.3 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
2SK2963(TE12L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 1A PW-MINI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MINI Package / Case: TO-243AA	Package: TO-243AA	Stock19,800	MOSFET (Metal Oxide)	100V	1A (Ta)	4V, 10V	2V @ 1mA	6.3nC @ 10V	140pF @ 10V	±20V	-	500mW (Ta)	700 mOhm @ 500mA, 10V	150°C (TJ)	Surface Mount	PW-MINI	TO-243AA
TPCF8B01(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2.7A VS-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,328	MOSFET (Metal Oxide)	20V	2.7A (Ta)	1.8V, 4.5V	1.2V @ 200µA	6nC @ 5V	470pF @ 10V	±8V	Schottky Diode (Isolated)	330mW (Ta)	110 mOhm @ 1.4A, 4.5V	150°C (TJ)	Surface Mount	VS-8 (2.9x1.5)	8-SMD, Flat Lead
2SJ377(TE16R1,NQ)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 5A PW-MOLD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,928	MOSFET (Metal Oxide)	60V	5A (Ta)	4V, 10V	2V @ 1mA	22nC @ 10V	630pF @ 10V	±20V	-	20W (Tc)	190 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	PW-MOLD	TO-252-3, DPak (2 Leads + Tab), SC-63
TPCA8008-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 4A 8-SOPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 580 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,416	MOSFET (Metal Oxide)	250V	4A (Ta)	10V	4V @ 1mA	10nC @ 10V	600pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	580 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
TPCA8010-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 200V 5.5A 8-SOPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,096	MOSFET (Metal Oxide)	200V	5.5A (Ta)	10V	4V @ 1mA	10nC @ 10V	600pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	450 mOhm @ 2.7A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
TPCA8009-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 7A 8-SOPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,808	MOSFET (Metal Oxide)	150V	7A (Ta)	10V	4V @ 1mA	10nC @ 10V	600pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	350 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
TK35N65W5,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 35A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,416	MOSFET (Metal Oxide)	650V	35A (Ta)	10V	4.5V @ 2.1mA	115nC @ 10V	4100pF @ 300V	±30V	-	270W (Tc)	95 mOhm @ 17.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
TK31J60W5,S1VQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-3P(N) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,888	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	3.7V @ 1.5mA	105nC @ 10V	3000pF @ 300V	±30V	Super Junction	230W (Tc)	88 mOhm @ 15.4A, 10V	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
TK31A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock3,536	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	3.7V @ 1.5mA	86nC @ 10V	3000pF @ 300V	±30V	Super Junction	45W (Tc)	88 mOhm @ 15.4A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
TK31E60W,S1VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 30.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,856	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	3.7V @ 1.5mA	86nC @ 10V	3000pF @ 300V	±30V	Super Junction	230W (Tc)	88 mOhm @ 15.4A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK20N60W,S1VF	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,344	MOSFET (Metal Oxide)	600V	20A (Ta)	10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	±30V	-	165W (Tc)	155 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
TK31V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 30.8A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	Package: 4-VSFN Exposed Pad	Stock270,000	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	3.7V @ 1.5mA	86nC @ 10V	3000pF @ 300V	±30V	Super Junction	240W (Tc)	98 mOhm @ 15.4A, 10V	150°C (TJ)	Surface Mount	5-DFN (8x8)	4-VSFN Exposed Pad
TK20E60W,S1VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,224	MOSFET (Metal Oxide)	600V	20A (Ta)	10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	±30V	-	165W (Tc)	155 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK12A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 11.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,800	MOSFET (Metal Oxide)	600V	11.5A (Ta)	10V	3.7V @ 600µA	25nC @ 10V	890pF @ 300V	±30V	Super Junction	35W (Tc)	300 mOhm @ 5.8A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK19A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 19A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,200	MOSFET (Metal Oxide)	450V	19A (Ta)	10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	±30V	-	50W (Tc)	250 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK18A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 18A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,736	MOSFET (Metal Oxide)	500V	18A (Ta)	10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	±30V	-	50W (Tc)	270 mOhm @ 9A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK10A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9.7A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,192	MOSFET (Metal Oxide)	600V	9.7A (Ta)	10V	3.7V @ 500µA	20nC @ 10V	700pF @ 300V	±30V	Super Junction	30W (Tc)	380 mOhm @ 4.9A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK15A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,832	MOSFET (Metal Oxide)	600V	15A (Ta)	10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	±30V	-	50W (Tc)	370 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK10Q60W,S1VQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9.7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,384	MOSFET (Metal Oxide)	600V	9.7A (Ta)	10V	3.7V @ 500µA	20nC @ 10V	700pF @ 300V	±30V	-	80W (Tc)	430 mOhm @ 4.9A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
TK14C65W5,S1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,688	MOSFET (Metal Oxide)	650V	13.7A (Ta)	10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	±30V	-	130W (Tc)	300 mOhm @ 6.9A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
TK14A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 14A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,976	MOSFET (Metal Oxide)	550V	14A (Ta)	10V	4V @ 1mA	40nC @ 10V	2300pF @ 25V	±30V	-	50W (Tc)	370 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack