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Vishay Semiconductor Diodes Division |
IGBT 600V 88A 338W EMIPAK2
- IGBT Type: -
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 88A
- Power - Max: 338W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK2
- Supplier Device Package: EMIPAK2
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Package: EMIPAK2 |
Stock3,536 |
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Vishay Semiconductor Diodes Division |
SCR DBL LOSCR 1200V 60A ADDAPAK
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 60A
- Current - On State (It (RMS)) (Max): 135A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ADD-A-PAK (3 + 2)
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Package: ADD-A-PAK (3 + 2) |
Stock4,928 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 30V 3W DO214AA
- Voltage - Zener (Nom) (Vz): 30V
- Tolerance: ±5%
- Power - Max: 3W
- Impedance (Max) (Zzt): 28 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 22.8V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMBJ)
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Package: DO-214AA, SMB |
Stock4,960 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 8.2V 200MW SOD323
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±2%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 5V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
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Package: SC-76, SOD-323 |
Stock3,440 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 9.1V 410MW SOD123
- Voltage - Zener (Nom) (Vz): 9.1V
- Tolerance: ±2%
- Power - Max: 410mW
- Impedance (Max) (Zzt): 4.8 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 7V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: SOD-123 |
Stock4,912 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 2.7V 300MW SOT23-3
- Voltage - Zener (Nom) (Vz): 2.7V
- Tolerance: ±2%
- Power - Max: 300mW
- Impedance (Max) (Zzt): 100 Ohms
- Current - Reverse Leakage @ Vr: 20µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,792 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 13V 225MW SOT23-3
- Voltage - Zener (Nom) (Vz): 13V
- Tolerance: ±2%
- Power - Max: 225mW
- Impedance (Max) (Zzt): 13 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 9.9V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,624 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 800MW SMF DO219
- Voltage - Zener (Nom) (Vz): 5.6V
- Tolerance: -
- Power - Max: 800mW
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 2V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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Package: DO-219AB |
Stock5,920 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 600MA MPG06
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 600mA
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 600mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: MPG06, Axial
- Supplier Device Package: MPG06
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: MPG06, Axial |
Stock4,368 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock7,376 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 400MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1µs
- Current - Reverse Leakage @ Vr: 2µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,504 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 30A TO247AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 160ns
- Current - Reverse Leakage @ Vr: 100µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-247-3 |
Stock68,232 |
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Vishay Semiconductor Diodes Division |
DIODE GP 2KV 330A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 330A
- Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-205AB, DO-9, Stud |
Stock6,944 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 85A DO203AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 267A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock5,072 |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 77pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock5,248 |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.4A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2.4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock6,960 |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 800V DO-214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 800V
- Capacitance @ Vr, F: 16pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock6,640 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO220AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 6pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock144,000 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 350MA 40V SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 350mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 5µA @ 30V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-76, SOD-323 |
Stock6,480 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30A TO247AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 480µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-247-3 |
Stock9,804 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 70A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock8,412 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO262
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 640mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package: TO-262-3
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,456 |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 45V TO247AC
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 590mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.75mA @ 45V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock13,812 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 8.5VWM 15.9VC DO204AC
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 8.5V
- Voltage - Breakdown (Min): 9.44V
- Voltage - Clamping (Max) @ Ipp: 15.9V
- Current - Peak Pulse (10/1000µs): 31.4A
- Power - Peak Pulse: 500W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: DO-204AC, DO-15, Axial |
Stock4,176 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 28.2VWM 45.7VC SMB
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 28.2V
- Voltage - Breakdown (Min): 31.4V
- Voltage - Clamping (Max) @ Ipp: 45.7V
- Current - Peak Pulse (10/1000µs): 13.1A
- Power - Peak Pulse: 600W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 185°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMBJ)
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Package: DO-214AA, SMB |
Stock8,496 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 170VWM 275VC P600
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 170V
- Voltage - Breakdown (Min): 189V
- Voltage - Clamping (Max) @ Ipp: 275V
- Current - Peak Pulse (10/1000µs): 18.2A
- Power - Peak Pulse: 5000W (5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
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Package: P600, Axial |
Stock6,084 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 33.3VWM 53.9VC SMC
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 33.3V
- Voltage - Breakdown (Min): 37.1V
- Voltage - Clamping (Max) @ Ipp: 53.9V
- Current - Peak Pulse (10/1000µs): 28A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMCJ)
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Package: DO-214AB, SMC |
Stock133,728 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 11.1VWM 18.2VC SMB
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 11.1V
- Voltage - Breakdown (Min): 12.4V
- Voltage - Clamping (Max) @ Ipp: 18.2V
- Current - Peak Pulse (10/1000µs): 33A
- Power - Peak Pulse: 600W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
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Package: DO-214AA, SMB |
Stock6,300 |
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