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Vishay Semiconductor Diodes Division |
DIODE ZENER 800MW SMF DO219AB
- Voltage - Zener (Nom) (Vz): 120V
- Tolerance: -
- Power - Max: 800mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 1µA @ 91V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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Package: DO-219AB |
Stock6,016 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 33V 1.5W DO214AA
- Voltage - Zener (Nom) (Vz): 33V
- Tolerance: ±5%
- Power - Max: 1.5W
- Impedance (Max) (Zzt): 33 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 25.1V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMBJ)
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Package: DO-214AA, SMB |
Stock4,272 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 10V 0.8W DO-219AB
- Voltage - Zener (Nom) (Vz): 10V
- Tolerance: -
- Power - Max: 800mW
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 7µA @ 7.5V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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Package: DO-219AB |
Stock4,304 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 24V 500MW SOD123
- Voltage - Zener (Nom) (Vz): 24V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 33 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 18V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: SOD-123 |
Stock6,704 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 1A 20V MICROSMP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250µA @ 20V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: MicroSMP
- Supplier Device Package: MicroSMP
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: MicroSMP |
Stock6,640 |
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Vishay Semiconductor Diodes Division |
DIODE GENERAL PURPOSE 85A DO-5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock3,344 |
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Vishay Semiconductor Diodes Division |
DIODE HEXFRED 25A 600V D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 20µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,624 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 16A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock3,584 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 15A D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800µA @ 60V
- Capacitance @ Vr, F: 720pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,560 |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 2.4A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 2.4A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock6,528 |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: SOD-64, Axial
- Supplier Device Package: SOD-64
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-64, Axial |
Stock7,776 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214BA |
Stock6,224 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214BA |
Stock7,680 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 400MW 50V SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 30mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1ns
- Current - Reverse Leakage @ Vr: 200nA @ 40V
- Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-123 |
Stock6,384 |
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Vishay Semiconductor Diodes Division |
DIODE 200V 4A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock4,064 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 20A TO-220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 45V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock6,368 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 45V TO-262AA
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package: TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,808 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO262
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io) (per Diode): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 7.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800µA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package: TO-262-3
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,728 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V TO-262AA
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600µA @ 80V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package: TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,336 |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 200V 8A D2PAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 8A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock26,400 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 2A 400V KBPM
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 165°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPM
- Supplier Device Package: KBPM
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Package: 4-SIP, KBPM |
Stock3,216 |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 1000V 4DIP
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-EDIP (0.300", 7.62mm)
- Supplier Device Package: DFM
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Package: 4-EDIP (0.300", 7.62mm) |
Stock3,520 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 5.5VWM 10.8VC 1.5KE
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V
- Voltage - Breakdown (Min): 6.12V
- Voltage - Clamping (Max) @ Ipp: 10.8V
- Current - Peak Pulse (10/1000µs): 139A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: 1.5KE
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Package: DO-201AA, DO-27, Axial |
Stock3,636 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 18.8VWM 30.6VC SMA
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 18.8V
- Voltage - Breakdown (Min): 20.9V
- Voltage - Clamping (Max) @ Ipp: 30.6V
- Current - Peak Pulse (10/1000µs): 13.1A
- Power - Peak Pulse: 400W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 185°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: DO-214AC, SMA |
Stock7,326 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 24VWM 47VC LLP753B
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 24V (Min)
- Voltage - Breakdown (Min): 27V
- Voltage - Clamping (Max) @ Ipp: 47V
- Current - Peak Pulse (10/1000µs): 5A (8/20µs)
- Power - Peak Pulse: 235W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: 65pF @ 1MHz
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-WDFN
- Supplier Device Package: LLP75-3B
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Package: 3-WDFN |
Stock5,418 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 7VWM 12VC SMC
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 7V
- Voltage - Breakdown (Min): 7.78V
- Voltage - Clamping (Max) @ Ipp: 12V
- Current - Peak Pulse (10/1000µs): 125A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMCJ)
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Package: DO-214AB, SMC |
Stock5,220 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 8VWM 19.2VC SOT23
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 8V (Max)
- Voltage - Breakdown (Min): 9V
- Voltage - Clamping (Max) @ Ipp: 19.2V
- Current - Peak Pulse (10/1000µs): 18A (8/20µs)
- Power - Peak Pulse: 345W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 160pF @ 1MHz
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,636 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 40VWM 64.5VC SMF
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 40V
- Voltage - Breakdown (Min): 44.4V
- Voltage - Clamping (Max) @ Ipp: 64.5V
- Current - Peak Pulse (10/1000µs): 3.1A
- Power - Peak Pulse: 200W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 172pF @ 1MHz
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: SMF
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Package: DO-219AB |
Stock36,000 |
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