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Vishay Semiconductor Diodes Division |
MODULE DIODE 135A INT-A-PAK
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 135A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 3200A, 3360A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
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Package: INT-A-PAK (3 + 4) |
Stock7,728 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 800MW SMF DO219-M3
- Voltage - Zener (Nom) (Vz): 22V
- Tolerance: -
- Power - Max: 800mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 16V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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Package: DO-219AB |
Stock3,968 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 800MW SMF DO219-M
- Voltage - Zener (Nom) (Vz): 56V
- Tolerance: -
- Power - Max: 800mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 43V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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Package: DO-219AB |
Stock5,296 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 2.4V 300MW SOT23-3
- Voltage - Zener (Nom) (Vz): 2.4V
- Tolerance: ±5%
- Power - Max: 300mW
- Impedance (Max) (Zzt): 100 Ohms
- Current - Reverse Leakage @ Vr: 50µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,824 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 68V 500MW SOD80
- Voltage - Zener (Nom) (Vz): 68V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 51V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80 MiniMELF
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock6,992 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 10V 225MW SOT23-3
- Voltage - Zener (Nom) (Vz): 10V
- Tolerance: ±5%
- Power - Max: 225mW
- Impedance (Max) (Zzt): 17 Ohms
- Current - Reverse Leakage @ Vr: 3µA @ 8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,000 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 7.5V 500MW DO35
- Voltage - Zener (Nom) (Vz): 7.5V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 5V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock120,000 |
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Vishay Semiconductor Diodes Division |
DIODE ZENER 43V 300MW SOT23
- Configuration: 1 Pair Common Anode
- Voltage - Zener (Nom) (Vz): 43V
- Tolerance: ±2%
- Power - Max: 300mW
- Impedance (Max) (Zzt): 100 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 32V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,368 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock4,480 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock4,224 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock7,952 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock5,696 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 20A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.12V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,216 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock2,448 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,840 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AC, DO-15, Axial |
Stock7,328 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO-219AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 220µA @ 40V
- Capacitance @ Vr, F: 125pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,832 |
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Vishay Semiconductor Diodes Division |
DIODE 100V 4A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 2µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock7,408 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 126A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.5mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-203AB, DO-5, Stud |
Stock6,324 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 10A TO262AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600µA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package: TO-262AA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock21,618 |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 100V D618SM
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 40A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5mA @ 100V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: D-61-8-SM
- Supplier Device Package: D-61-8-SM
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Package: D-61-8-SM |
Stock44,640 |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 10A D2PAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 80V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,152 |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 200V 10A D2PAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 15µA @ 200V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,568 |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 100V D2PAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 8A
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 550µA @ 100V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock57,600 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1.5A 200V KBPM
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPM
- Supplier Device Package: KBPM
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Package: 4-SIP, KBPM |
Stock6,000 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 100V GBPC
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
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Package: 4-Square, GBPC |
Stock7,872 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 13VWM 23.8VC DO218AB
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 13V
- Voltage - Breakdown (Min): 14.4V
- Voltage - Clamping (Max) @ Ipp: 23.8V
- Current - Peak Pulse (10/1000µs): 277A
- Power - Peak Pulse: 6600W (6.6kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-218AB
- Supplier Device Package: DO-218AB
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Package: DO-218AB |
Stock396,000 |
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Vishay Semiconductor Diodes Division |
TVS DIODE 13VWM 23.8VC SMP
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 13V
- Voltage - Breakdown (Min): 14.4V
- Voltage - Clamping (Max) @ Ipp: 23.8V
- Current - Peak Pulse (10/1000µs): 16.8A
- Power - Peak Pulse: 400W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
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Package: DO-220AA |
Stock7,182 |
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