Page 114 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

IRF820ALPBF
Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock37,740
SI7384DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock83,484
SI7720DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A 1212-8

Package: PowerPAK? 1212-8

Stock475,140
SIJ458DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock36,000
IRF820LPBF
Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock39,252
IRL510STRLPBF
Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock88,080
SI4425BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 8.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,656
IRFU430APBF
Vishay Siliconix

MOSFET N-CH 500V 5A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock12,936
IRFR9024TRRPBF
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock11,820
IRFR9024TRLPBF
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,072
IRF624PBF
Vishay Siliconix

MOSFET N-CH 250V 4.4A TO-220AB

Package: TO-220-3

Stock421,188
IRFR9020TRLPBF
Vishay Siliconix

MOSFET P-CH 50V 9.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,208
IRFR430ATRLPBF
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock44,364
IRFBC30ALPBF
Vishay Siliconix

MOSFET N-CH 600V 3.6A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock40,800
IRF9Z14LPBF
Vishay Siliconix

MOSFET P-CH 60V 6.7A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock34,644
SI4368DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock154,404
IRFU9020PBF
Vishay Siliconix

MOSFET P-CH 50V 9.9A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock122,760
IRF610LPBF
Vishay Siliconix

MOSFET N-CH 200V 3.3A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock33,516
SIHB10N40D-GE3
Vishay Siliconix

MOSFET N-CH 400V 10A DPAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,584
SIHU7N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 7A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,688

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF820ALPBF	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock37,740	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	±30V	-	50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
SI7384DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock83,484	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	8.5 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7720DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock475,140	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.5V @ 250µA	45nC @ 10V	1790pF @ 15V	±20V	-	3.8W (Ta), 52W (Tc)	12.5 mOhm @ 10A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SIJ458DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,000	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	122nC @ 10V	4810pF @ 15V	±20V	-	5W (Ta), 69.4W (Tc)	2.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRF820LPBF	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock39,252	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL510STRLPBF	Vishay Siliconix	MOSFET N-CH 100V 5.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock88,080	MOSFET (Metal Oxide)	100V	5.6A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	3.7W (Ta), 43W (Tc)	540 mOhm @ 3.4A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4425BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 8.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,656	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	3V @ 250µA	100nC @ 10V	-	±20V	-	1.5W (Ta)	12 mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU430APBF	Vishay Siliconix	MOSFET N-CH 500V 5A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock12,936	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	490pF @ 25V	±30V	-	110W (Tc)	1.7 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFR9024TRRPBF	Vishay Siliconix	MOSFET P-CH 60V 8.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock11,820	MOSFET (Metal Oxide)	60V	8.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	280 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024TRLPBF	Vishay Siliconix	MOSFET P-CH 60V 8.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,072	MOSFET (Metal Oxide)	60V	8.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	280 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF624PBF	Vishay Siliconix	MOSFET N-CH 250V 4.4A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock421,188	MOSFET (Metal Oxide)	250V	4.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	50W (Tc)	1.1 Ohm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR9020TRLPBF	Vishay Siliconix	MOSFET P-CH 50V 9.9A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,208	MOSFET (Metal Oxide)	50V	9.9A (Tc)	10V	4V @ 250µA	14nC @ 10V	490pF @ 25V	±20V	-	42W (Tc)	280 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR430ATRLPBF	Vishay Siliconix	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock44,364	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	490pF @ 25V	±30V	-	110W (Tc)	1.7 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFBC30ALPBF	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock40,800	MOSFET (Metal Oxide)	600V	3.6A (Tc)	10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	±30V	-	74W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF9Z14LPBF	Vishay Siliconix	MOSFET P-CH 60V 6.7A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock34,644	MOSFET (Metal Oxide)	60V	6.7A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	500 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
SI4368DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock154,404	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	1.8V @ 250µA	80nC @ 4.5V	8340pF @ 15V	±12V	-	1.6W (Ta)	3.2 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU9020PBF	Vishay Siliconix	MOSFET P-CH 50V 9.9A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock122,760	MOSFET (Metal Oxide)	50V	9.9A (Tc)	10V	4V @ 250µA	14nC @ 10V	490pF @ 25V	±20V	-	42W (Tc)	280 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRF610LPBF	Vishay Siliconix	MOSFET N-CH 200V 3.3A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock33,516	MOSFET (Metal Oxide)	200V	3.3A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	3W (Ta), 36W (Tc)	1.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
SIHB10N40D-GE3	Vishay Siliconix	MOSFET N-CH 400V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,584	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	526pF @ 100V	±30V	-	147W (Tc)	600 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHU7N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 7A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,688	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	40nC @ 10V	680pF @ 100V	±30V	-	78W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SI4884BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 16.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,520	MOSFET (Metal Oxide)	30V	16.5A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 10V	1525pF @ 15V	±20V	-	2.5W (Ta), 4.45W (Tc)	9 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIE864DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 45A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (U) Package / Case: 10-PolarPAK? (U)	Package: 10-PolarPAK? (U)	Stock5,168	MOSFET (Metal Oxide)	30V	45A (Tc)	4.5V, 10V	2V @ 250µA	38nC @ 10V	1510pF @ 15V	±20V	-	5.2W (Ta), 25W (Tc)	5.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (U)	10-PolarPAK? (U)
IRFRC20TRRPBF	Vishay Siliconix	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,648	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	4.4 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4413CDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock18,792	MOSFET (Metal Oxide)	30V	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR320TRRPBF	Vishay Siliconix	MOSFET N-CH 400V 3.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,440	MOSFET (Metal Oxide)	400V	3.1A (Tc)	10V	4V @ 250µA	20nC @ 10V	350pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.8 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4634DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 24.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,100,388	MOSFET (Metal Oxide)	30V	24.5A (Tc)	4.5V, 10V	2.6V @ 250µA	68nC @ 10V	3150pF @ 15V	±20V	-	2.5W (Ta), 5.7W (Tc)	5.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4634DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 24.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,790,628	MOSFET (Metal Oxide)	30V	24.5A (Tc)	4.5V, 10V	2.6V @ 250µA	68nC @ 10V	3150pF @ 15V	±20V	-	2.5W (Ta), 5.7W (Tc)	5.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7758DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock8,352	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.7V @ 250µA	160nC @ 10V	7150pF @ 15V	±20V	-	6.25W (Ta), 104W (Tc)	2.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8