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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Current Sensing
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-5
- Package / Case: TO-220-5
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Package: TO-220-5 |
Stock4,592 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 2500pF @ 25V | ±20V | Current Sensing | 150W (Tc) | 28 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,424 |
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MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 3.7 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock31,752 |
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MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | ±20V | - | 3.1W (Ta), 74W (Tc) | 2.2 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Current Sensing
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-5
- Package / Case: TO-220-5
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Package: TO-220-5 |
Stock11,472 |
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MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1300pF @ 25V | ±20V | Current Sensing | 88W (Tc) | 50 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 100V 14A TO-220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Current Sensing
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-5
- Package / Case: TO-220-5
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Package: TO-220-5 |
Stock5,760 |
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MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 700pF @ 25V | ±20V | Current Sensing | 88W (Tc) | 160 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 300V 9.3A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,160 |
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MOSFET (Metal Oxide) | 300V | 9.3A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | 920pF @ 25V | ±30V | - | 96W (Tc) | 450 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 55V 17A TO-220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Current Sensing
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-5
- Package / Case: TO-220-5
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Package: TO-220-5 |
Stock7,376 |
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MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 720pF @ 25V | ±20V | Current Sensing | 60W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 450V 8.8A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock60,000 |
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MOSFET (Metal Oxide) | 450V | 8.8A (Tc) | 10V | 4V @ 250µA | 80nC @ 10V | 1400pF @ 25V | ±20V | - | 125W (Tc) | 630 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 50V 30A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock85,104 |
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MOSFET (Metal Oxide) | 50V | 30A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 1600pF @ 25V | ±20V | - | 74W (Tc) | 50 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock24,348 |
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MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 770pF @ 25V | ±20V | - | 3.1W (Ta), 74W (Tc) | 450 mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,360 |
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MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 1060pF @ 25V | ±20V | - | 150W (Tc) | 240 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,776 |
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MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 1060pF @ 25V | ±20V | - | 150W (Tc) | 240 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,912 |
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MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 430pF @ 25V | ±30V | - | 74W (Tc) | 750 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 4A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.4A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock10,272 |
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MOSFET (Metal Oxide) | 200V | 4A (Tc) | 4V, 5V | 2V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±10V | - | 30W (Tc) | 800 mOhm @ 2.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 250V 3.4A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,272 |
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MOSFET (Metal Oxide) | 250V | 3.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 30W (Tc) | 1.1 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 450V 9.5A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,968 |
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MOSFET (Metal Oxide) | 450V | 9.5A (Tc) | 10V | 4V @ 250µA | 80nC @ 10V | 1400pF @ 25V | ±20V | - | 150W (Tc) | 630 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 57A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,496 |
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MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 2500pF @ 25V | ±20V | - | 180W (Tc) | 28 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A SUPER247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-247 (TO-274AA)
- Package / Case: TO-274AA
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Package: TO-274AA |
Stock2,768 |
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MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 5V @ 250µA | 220nC @ 10V | 6160pF @ 25V | ±30V | - | 480W (Tc) | 210 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 600V 30A SUPER247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-247 (TO-274AA)
- Package / Case: TO-274AA
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Package: TO-274AA |
Stock6,744 |
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MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 250µA | 220nC @ 10V | 5870pF @ 25V | ±30V | - | 450W (Tc) | 190 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 500V 34A SUPER247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5580pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-247 (TO-274AA)
- Package / Case: TO-274AA
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Package: TO-274AA |
Stock5,328 |
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MOSFET (Metal Oxide) | 500V | 34A (Tc) | 10V | 5V @ 250µA | 230nC @ 10V | 5580pF @ 25V | ±30V | - | 450W (Tc) | 145 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 650V 22A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,696 |
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MOSFET (Metal Oxide) | 650V | 22A (Ta) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 460 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,936 |
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MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 5V @ 250µA | 100nC @ 10V | 2720pF @ 25V | ±30V | - | 280W (Tc) | 460 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 44A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock9,792 |
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MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 3860pF @ 25V | ±20V | - | 380W (Tc) | 60 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 460 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock191,124 |
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MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 5V @ 250µA | 100nC @ 10V | 2720pF @ 25V | ±30V | - | 310W (Tc) | 460 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 370 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,472 |
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MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 5V @ 250µA | 77nC @ 10V | 2260pF @ 25V | ±30V | - | 200W (Tc) | 370 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock102,084 |
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MOSFET (Metal Oxide) | 250V | 23A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 2040pF @ 25V | ±20V | - | 220W (Tc) | 125 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.7A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,216 |
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MOSFET (Metal Oxide) | 500V | 4.7A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 1000pF @ 25V | ±30V | - | 42W (Tc) | 800 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 6.8A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,072 |
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MOSFET (Metal Oxide) | 500V | 6.8A (Tc) | 10V | 5V @ 250µA | 92nC @ 10V | 2220pF @ 25V | ±30V | - | 46W (Tc) | 380 mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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