Vishay Siliconix Products

MOSFET N-CH 30V 42A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

MOSFET P-CH 30V 2.5A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 710mW (Ta)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

MOSFET N-CH 500V 20A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

MOSFET P-CH 100V 11A TO220FP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

MOSFET P-CH 60V 18A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MOSFET N-CH 100V 17A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

MOSFET N-CH 500V 5A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

MOSFET N-CH 20V 200MA SC89-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 300mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-89-3
• Package / Case: SC-89, SOT-490

MOSFET N-CH 30V 12A SC-70-6L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-70-6 Single
• Package / Case: PowerPAK? SC-70-6

MOSFET P-CH 200V 11A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MOSFET N-CH 150V 3A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

MOSFET N-CH 150V 1.2A 6-TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.14W (Ta)
• Rds On (Max) @ Id, Vgs: 375 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

MOSFET N-CH 30V 25A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 4.5W (Ta), 31W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

MOSFET 2P-CH 20V 3.6A 8-SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.6A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

IC BI-DIR BATT SWITCH WCSP12

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 2.3 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5A
• Rds On (Typ): 6.5 mOhm
• Input Type: -
• Features: Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 12-UFBGA, WLCSP
• Supplier Device Package: 12-WCSP (1.3x1.7)

IC DRVR MOSF 1/2BRDG N-CH 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 10.8 V ~ 13.2 V
• Logic Voltage - VIL, VIH: 1V, 4V
• Current - Peak Output (Source, Sink): 800mA, 1A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 48V
• Rise / Fall Time (Typ): 45ns, 35ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

IC SWITCH CMOS 14DIP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 50 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 250ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 30pC
• Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -74dB @ 500kHz
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 14-CDIP (0.300", 7.62mm)
• Supplier Device Package: 14-CERDIP

IC SWITCH QUAD SPST 16-DIP

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 35 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 5 V ~ 44 V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 175ns, 145ns
• -3db Bandwidth: -
• Charge Injection: 5pC
• Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -85dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-PDIP

IC ANALOG SWITCH SPDT 28DIP

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 16:1
• Number of Circuits: 1
• On-State Resistance (Max): 60 Ohm
• Channel-to-Channel Matching (ΔRon): 3 Ohm
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 107ns, 88ns
• -3db Bandwidth: -
• Charge Injection: 11pC
• Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-DIP (0.600", 15.24mm)
• Supplier Device Package: 28-DIP

IC SWITCH QUAD SPST 16-SOIC

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 35 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 105ns, 80ns
• -3db Bandwidth: -
• Charge Injection: 22pC
• Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -88dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

IC SWITCH QUAD CMOS 16TSSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 1.7 Ohm
• Voltage - Supply, Single (V+): 4 V ~ 44 V
• Voltage - Supply, Dual (V±): ±4 V ~ 22 V
• Switch Time (Ton, Toff) (Max): 200ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -95dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

N-CHANNEL 100 V (D-S) 175C MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8DC
• Package / Case: PowerPAK® SO-8

IC REG BUCK 8A PPPAK MLP55-27L

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 55V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 24V
• Current - Output: 8A
• Frequency - Switching: 100kHz ~ 2MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® MLP55-27
• Supplier Device Package: PowerPAK® MLP55-27

MOSFET N/P-CH 20V 8-TSSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
• Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

MOSFET N-CH 30V 15.3A/38.3A PPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 38.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® 1212-8
• Package / Case: PowerPAK® 1212-8

MOSFET N-CH 600V 28A PPAK 8 X 8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 174W (Tc)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® 8 x 8
• Package / Case: 8-PowerTDFN

MOSFET N-CH 40V 100A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

MOSFET N/P-CH 40V/200V 30A DIE

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V, 200V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)
• Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
• Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
• Power - Max: 48W (Tc), 60W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: Die
• Supplier Device Package: Die