Alpha & Omega Semiconductor Inc. Products

MOSFET NCH 150V 106A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 106A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3010pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.2W (Ta), 277W (Tc)
• Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

MOSFET N-CH 700V 11A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 271W (Tc)
• Rds On (Max) @ Id, Vgs: 870 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

MOSFET N CH 30V 30A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.6W (Ta), 35.5W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

MOSFET P-CH 20V 1.9A SC70-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 570mW (Ta)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6
• Package / Case: 6-TSSOP, SC-88, SOT-363

MOSFET N-CH 30V 32A DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 6.2W (Ta), 31W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

MOSFET 2N-CH 30V 8A

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

MOSFET 2N-CH 20V 6A 8-DFN

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
• Power - Max: 2.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 8-DFN (2.9x2.3)

IC REG BUCK DFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 16V
• Current - Output: 4A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

IC POWER DIST LOAD SW 8DFN

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.8 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.3A
• Rds On (Typ): 75 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-DFN (2x2)

IC LOAD SW HI SIDE P-CH 4DFN

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.6 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 60 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 4-UFDFN Exposed Pad
• Supplier Device Package: 4-DFN-EP (1.2x1.6)

TVS DIODE 3.3VWM 10VC 10DFN

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.3V (Max)
• Voltage - Breakdown (Min): 3.5V
• Voltage - Clamping (Max) @ Ipp: 10V
• Current - Peak Pulse (10/1000µs): 25A (8/20µs)
• Power - Peak Pulse: 350W
• Power Line Protection: Yes
• Applications: Ethernet, Telecom
• Capacitance @ Frequency: 5pF @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN Exposed Pad
• Supplier Device Package: 10-DFN (2.6x2.6)

TVS DIODE 2.5VWM 5VC 10DFN

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 2.5V (Max)
• Voltage - Breakdown (Min): 2.8V
• Voltage - Clamping (Max) @ Ipp: 5V
• Current - Peak Pulse (10/1000µs): 25A (8/20µs)
• Power - Peak Pulse: 350W
• Power Line Protection: Yes
• Applications: Ethernet, Telecom
• Capacitance @ Frequency: 3pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN Exposed Pad
• Supplier Device Package: 10-DFN (2.6x2.6)

IC REG BUCK ADJUSTABLE 3A 8SOIC

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 15.3V
• Current - Output: 3A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

IC REG BUCK ADJUSTABLE 8A 23QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.7V
• Voltage - Input (Max): 24V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 20.4V
• Current - Output: 8A
• Frequency - Switching: 200kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 23-PowerTFQFN
• Supplier Device Package: 23-QFNA (4x4)

IC REG BUCK ADJUSTABLE 3A 8SOIC

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 16V
• Current - Output: 3A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

IC POWER DIST LOAD SW 8DFN

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.8V ~ 5.5V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.3A
• Rds On (Typ): 75mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-DFN-EP (2x2)

IC POWER DIST LOAD SW 8DFN

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

IPM3

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 10 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 26-PowerDIP Module (1.146", 29.10mm)

MOSFET N-CH 30V 21A 8DFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 13240 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.2W (Ta), 138W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

IC REG BUCK ADJ 10A 22QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 6.5V
• Voltage - Input (Max): 28V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 23.8V
• Current - Output: 10A
• Frequency - Switching: -
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 22-PowerVFQFN
• Supplier Device Package: 22-QFN (4x4)

IC REG 16A

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

MOSFET N-CH 20V 20A/20A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 28W (Tc)
• Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN-EP (3x3)
• Package / Case: 8-PowerVDFN

IPM5

• Type: IGBT
• Configuration: Full Bridge Inverter
• Current: 5 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 23-PowerDIP Module (0.748", 19.00mm)

MOSFET N-CH 100V 16.5A/58A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

650V, 20A ALPHAIGBT TM WITH SOFT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
• Power - Max: 45 W
• Switching Energy: 450µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 52 nC
• Td (on/off) @ 25°C: 23ns/135ns
• Test Condition: 400V, 20A, 15Ohm, 15V
• Reverse Recovery Time (trr): 266 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F

8A BUCK REGULATOR IN QFN4X4_23L

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 10V
• Voltage - Input (Max): 28V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5V
• Current - Output: 8A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 23-PowerTFQFN
• Supplier Device Package: 23-QFNB (4x4)

MOSFET N-CH 30V 4A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: 3-SMD, SOT-23-3 Variant

IGBT 10A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 25 A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A
• Power - Max: 83 W
• Switching Energy: 190µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 14 nC
• Td (on/off) @ 25°C: 5.5ns/61ns
• Test Condition: 400V, 10A, 30Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220