Alpha & Omega Semiconductor Inc. Products

MOSFET N-CH 75V 3.1A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 37.5V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

MOSFET N-CH 60V 12A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2007pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

MOSFET N-CH 100V 8SOIC

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

MOSFET N-CH TO-252

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

MOSFET N-CH 25V 15A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

MOSFET N-CH 200V 5.8A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 27W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.9A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

MOSFET N-CH 30V 13A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

MOSFET N-CH 30V 85A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

MOSFET N-CH 75V 21.5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10350pF @ 37.5V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

MOSFET N-CH 700V 7A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 198W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

MOSFET N-CH 100V 21A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 43W (Tc)
• Rds On (Max) @ Id, Vgs: 48 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (3x3)
• Package / Case: 8-PowerSMD, Flat Leads

MOSFET P-CH 30V 17A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

MOSFET N/P-CH 40V 6A/5A 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6A, 5A
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

MOSFET 2N-CH 30V 7.2A 6DFN

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.2A
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 7A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
• Power - Max: 1.6W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: 6-DFN-EP (2x5)

IC REG BUCK ADJ 3A 8DFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 27V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 22.95V
• Current - Output: 3A
• Frequency - Switching: 370kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-DFN (5x4)

IC SMART LOAD SW 2CH 14DFN

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

TVS DIODE SOT23-6

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

IC REGULATOR DFN

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

IC REG BUCK ADJUSTABLE 3A 8SOIC

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 16V
• Current - Output: 3A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

IC POWER DIST LOAD SW 8DFN

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.8V ~ 5.5V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.3A
• Rds On (Typ): 75mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-DFN-EP (2x2)

MOSFET P-CH 20V 4.5A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: 3-SMD, SOT-23-3 Variant

MOSFET N-CH 55V 2.1A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: 3-SMD, SOT-23-3 Variant

MOSFET 2N-CH 30V 17.5A/32A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
• Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
• Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-DFN (5x6)

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251B
• Package / Case: TO-251-3 Stub Leads, IPAK

IC REG BUCK ADJ 10A 23QFNB

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2V
• Voltage - Input (Max): 28V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 23.8V
• Current - Output: 10A
• Frequency - Switching: -
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 23-PowerTFQFN
• Supplier Device Package: 23-QFNB (4x4)

MOSFET N-CH 30V 5A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: 3-SMD, SOT-23-3 Variant

ALPHAZBL, ACTIVE BRIDGE RECTIFIE

• Type: -
• FET Type: -
• Ratio - Input:Output: -
• Internal Switch(s): -
• Delay Time - ON: -
• Delay Time - OFF: -
• Current - Output (Max): -
• Current - Supply: -
• Voltage - Supply: 18V
• Applications: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

MOSFET N-CH 600V 11A TO262F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262F
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA