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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 800mW
- Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 20 V | 6.1A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 14.5 nC @ 8 V | 803 pF @ 10 V | ±10V | - | 800mW | 28mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 92A (Tc) | 6V, 10V | 4V @ 1mA | 34 nC @ 10 V | 1950 pF @ 40 V | ±20V | - | 1.6W (Ta), 100W (Tc) | 7.8mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V TSOT26 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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MOSFET (Metal Oxide) | 60 V | 2.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 23.2 nC @ 10 V | 1283 pF @ 30 V | ±20V | - | 1.1W (Ta) | 115mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 101V~250V PowerDI5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2344 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 11A (Ta), 61A (Tc) | 8V, 10V | 4V @ 250µA | 34 nC @ 10 V | 2344 pF @ 75 V | ±20V | - | 1.5W (Ta) | 19mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 40V 87A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3213 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.25W (Ta)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 87A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 44.4 nC @ 10 V | 3213 pF @ 20 V | ±20V | - | 2.25W (Ta) | 4mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW
- Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | - | 193 pF @ 10 V | ±12V | - | 700mW | 150mOhm @ 4.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.83W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 69.6 nC @ 10 V | 5220 pF @ 20 V | ±20V | - | 2.83W (Ta), 125W (Tc) | 2.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT523 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 260mW (Ta)
- Rds On (Max) @ Id, Vgs: 710mOhm @ 400mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 630mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 1.4 nC @ 4.5 V | 33 pF @ 10 V | ±8V | - | 260mW (Ta) | 710mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET N-CH 24V 70A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 24 V | 70A (Tc) | 2.5V, 10V | 1.45V @ 250µA | 53.7 nC @ 10 V | 1683 pF @ 15 V | ±12V | - | 1.2W (Ta) | 5mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 24V 70A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 24 V | 70A (Tc) | 2.5V, 10V | 1.45V @ 250µA | 53.7 nC @ 10 V | 1683 pF @ 15 V | ±12V | - | 1.2W (Ta) | 5mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 21A PWRDI5060-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.28W
- Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock17,907 |
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MOSFET (Metal Oxide) | 30 V | 21A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 22 nC @ 10 V | 1372 pF @ 15 V | ±20V | - | 1.28W | 28mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V U-DFN2020-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1246 pF @ 6 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 12 V | 14.7A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 29.5 nC @ 10 V | 1246 pF @ 6 V | ±8V | - | 1.1W (Ta) | 6mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V SO-8 T&R 2
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W
- Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 11A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 112 nC @ 10 V | 5697 pF @ 20 V | ±20V | - | 1.8W | 11mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 30V 2.8A TSOT26 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 2.8A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 7.3 nC @ 4.5 V | 708 pF @ 15 V | ±12V | - | 1.25W (Ta) | 75mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SO-8 T&R 2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2311 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 42 nC @ 10 V | 2311 pF @ 15 V | ±20V | - | 1.4W (Ta) | 5.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2020-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 13A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14.9 nC @ 10 V | 1009 pF @ 15 V | ±20V | - | 860mW (Ta) | 6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 100V 51.7A TO252 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 51.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock21,795 |
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MOSFET (Metal Oxide) | 100 V | 51.7A (Tc) | 4.5V, 10V | 3V @ 250µA | 21 nC @ 10 V | 1477 pF @ 50 V | ±20V | - | 3.1W (Ta) | 22mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V U-DFN2020
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 7.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 10.4 nC @ 10 V | 641 pF @ 25 V | ±20V | - | 1.2W (Ta) | 25mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V U-DFN2020-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 12.8A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 27.9 nC @ 10 V | 1083 pF @ 10 V | ±12V | - | 1.3W (Ta) | 9mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 60V 2.4A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW
- Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock25,596 |
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MOSFET (Metal Oxide) | 60 V | 2.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 8.3 nC @ 10 V | 512 pF @ 30 V | ±20V | - | 920mW | 155mOhm @ 2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V TO252 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 89.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2253 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 65.7W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,485 |
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MOSFET (Metal Oxide) | 30 V | 17.9A (Ta), 89.3A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 38.6 nC @ 10 V | 2253 pF @ 15 V | ±20V | - | 1.4W (Ta), 65.7W (Tc) | 5.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 3.3A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 2 nC @ 10 V | 300 pF @ 10 V | ±20V | - | 800mW (Ta) | 90mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2020-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 8.6A (Ta) | 5V, 10V | 2.6V @ 250µA | 20 nC @ 10 V | 1031 pF @ 15 V | ±25V | - | 1.3W (Ta) | 19mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V X2-DFN2020
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2020-6 (Type W)
- Package / Case: 6-PowerXDFN
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 14.9 nC @ 10 V | 1009 pF @ 15 V | ±20V | - | 910mW (Ta) | 9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN2020-6 (Type W) | 6-PowerXDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V TO252 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 4336 pF @ 15 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 2.45mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 2V @ 1mA | 69 nC @ 15 V | 4336 pF @ 15 V | ±16V | - | 1.9W (Ta) | 2.45mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
DIODE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
Stock13,857 |
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MOSFET (Metal Oxide) | 50 V | 350mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 0.6 nC @ 4.5 V | 46 pF @ 25 V | ±20V | - | 300mW (Ta) | 1.6Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V TO220AB T
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 111A (Tc) | 10V | 4V @ 1mA | 34 nC @ 10 V | 1950 pF @ 40 V | ±20V | - | 2.4W (Ta), 167W (Tc) | 7.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 240V SOT223 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
- Vgs (Max): ±40V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Stock3,195 |
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MOSFET (Metal Oxide) | 240 V | 500mA (Ta) | 2.5V, 10V | 1.8V @ 1mA | - | 200 pF @ 25 V | ±40V | - | 2.5W (Ta) | 5.5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |