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Diodes Incorporated |
CRYSTAL 32.768KHZ 12.5PF SMD
- Type: kHz Crystal (Tuning Fork)
- Frequency: 32.768kHz
- Frequency Stability: -
- Frequency Tolerance: ±20ppm
- Load Capacitance: 12.5pF
- ESR (Equivalent Series Resistance): 50 kOhm
- Operating Mode: Fundamental
- Operating Temperature: -40°C ~ 85°C
- Ratings: -
- Mounting Type: Surface Mount
- Package / Case: 4-SOJ, 5.50mm pitch
- Size / Dimension: 0.311" L x 0.150" W (7.90mm x 3.80mm)
- Height - Seated (Max): 0.102" (2.60mm)
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Package: 4-SOJ, 5.50mm pitch |
Stock4,338 |
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Diodes Incorporated |
MOSFET N-CH 100V 2.3A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 401pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock3,664 |
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Diodes Incorporated |
TRANS PNP 20V 2A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 600mW
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,368 |
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Diodes Incorporated |
TRANS NPN 45V 0.1A SC70-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock108,000 |
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Diodes Incorporated |
DIODE VARACTOR 25V SOD323
- Capacitance @ Vr, F: 23.1pF @ 2V, 1MHz
- Capacitance Ratio: 6.5
- Capacitance Ratio Condition: C2/C20
- Voltage - Peak Reverse (Max): 25V
- Diode Type: Single
- Q @ Vr, F: 200 @ 3V, 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
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Package: SC-76, SOD-323 |
Stock7,232 |
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Diodes Incorporated |
DIODE VAR CAP DUAL 33PF SOT23-3
- Capacitance @ Vr, F: 36.3pF @ 2V, 1MHz
- Capacitance Ratio: 6.5
- Capacitance Ratio Condition: C2/C20
- Voltage - Peak Reverse (Max): 25V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 200 @ 3V, 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,120 |
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Diodes Incorporated |
RECT BRIDGE GPP 6A 800V KBJ
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBJ
- Supplier Device Package: KBJ
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Package: 4-SIP, KBJ |
Stock22,920 |
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Diodes Incorporated |
IC REG LINEAR 2.5V 300MA SOT23R
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.55V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 75µA ~ 85µA
- PSRR: 65dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT23R
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock242,400 |
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Diodes Incorporated |
RESET GENERATOR SOT23
- Type: Simple Reset/Power-On Reset
- Number of Voltages Monitored: 1
- Output: Open Drain or Open Collector
- Reset: Active Low
- Reset Timeout: 1 ms Minimum
- Voltage - Threshold: 3.08V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,056 |
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Diodes Incorporated |
RESET GENERATOR SOT23
- Type: Simple Reset/Power-On Reset
- Number of Voltages Monitored: 1
- Output: Open Drain or Open Collector
- Reset: Active Low
- Reset Timeout: 143 ms Minimum
- Voltage - Threshold: 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,600 |
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Diodes Incorporated |
MULTICELL BATT MANAGER SOT26
- Function: -
- Battery Chemistry: -
- Number of Cells: -
- Fault Protection: -
- Interface: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,192 |
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Diodes Incorporated |
IC BATT CHRGR LI-ION SGL 20QFN
- Battery Chemistry: Lithium-Ion
- Number of Cells: 1
- Current - Charging: Constant - Programmable
- Programmable Features: Timer
- Fault Protection: Over Temperature, Over Voltage, Reverse Current, Short Circuit
- Charge Current - Max: 1.5A
- Battery Pack Voltage: 4.2V
- Voltage - Supply (Max): 5.5V
- Interface: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 20-WFQFN Exposed Pad
- Supplier Device Package: 20-QFN (4.5x3.5)
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Package: 20-WFQFN Exposed Pad |
Stock58,080 |
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Diodes Incorporated |
IC BUS SWITCH 4CH 20TSSOP
- Type: Bus Switch
- Circuit: 2 x 1:4
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Single Supply
- Voltage - Supply: 1.65 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,520 |
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Diodes Incorporated |
IC AMP AUD 30VPP CLASS D 16WCSP
- Type: Class D
- Output Type: 1-Channel (Mono)
- Max Output Power x Channels @ Load: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Features: Short-Circuit and Thermal Protection
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 85°C (TA)
- Supplier Device Package: 16-CSP (1.95x1.95)
- Package / Case: 16-WFBGA, WLCSP
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Package: 16-WFBGA, WLCSP |
Stock108,000 |
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Diodes Incorporated |
IC ZERO DELY CLK BUFF 1:9 16SOIC
- Type: -
- PLL: Yes with Bypass
- Input: TTL
- Output: TTL
- Number of Circuits: 1
- Ratio - Input:Output: 1:9
- Differential - Input:Output: No/No
- Frequency - Max: 220MHz
- Divider/Multiplier: No/No
- Voltage - Supply: 2.375 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock5,088 |
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Diodes Incorporated |
TVS DIODE 17VWM 27.6VC SMC
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 17V
- Voltage - Breakdown (Min): 18.9V
- Voltage - Clamping (Max) @ Ipp: 27.6V
- Current - Peak Pulse (10/1000µs): 53.3A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
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Package: DO-214AB, SMC |
Stock7,776 |
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Diodes Incorporated |
MAGNETIC SWITCH LATCH 4SDIP
- Function: Latch
- Technology: Hall Effect
- Polarization: Unidirectional
- Sensing Range: 7mT Trip, -7mT Release
- Test Condition: 25°C
- Voltage - Supply: 3.5 V ~ 20 V
- Current - Supply (Max): 25mA
- Current - Output (Max): -
- Output Type: Open Collector
- Features: -
- Operating Temperature: -20°C ~ 85°C
- Package / Case: 4-SIP
- Supplier Device Package: 4-SDIP
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Package: 4-SIP |
Stock4,464 |
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Diodes Incorporated |
XO CLOCK
- Logic Type: -
- Supply Voltage: -
- Number of Bits: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,224 |
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Diodes Incorporated |
IC REG LINEAR 2.5V 300MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.18V @ 150mA (Typ)
- Current - Output: 300mA
- Current - Quiescent (Iq): 65µA
- Current - Supply (Max): -
- PSRR: 75dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 4-UDFN (1x1)
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Package: 4-XDFN Exposed Pad |
Stock5,008 |
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Diodes Incorporated |
REALTIMECLOCKI2C W-DFN2030-8
- Type: Clock/Calendar
- Features: Alarm, Leap Year, Square Wave Output
- Memory Size: -
- Time Format: HH:MM:SS (24 hr)
- Date Format: YY-MM-DD-dd
- Interface: I²C, 2-Wire Serial
- Voltage - Supply: 1.3 V ~ 5.5 V
- Voltage - Supply, Battery: -
- Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock6,224 |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT323 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 450mW (Ta)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Request a Quote |
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Diodes Incorporated |
PWR HI VOLTAGE TRANSISTOR TO252
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Power - Max: 1.5 W
- Frequency - Transition: 3MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
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Package: - |
Request a Quote |
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Diodes Incorporated |
PREBIAS TRANSISTOR SOT363 T&R 10
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT323 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
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Diodes Incorporated |
MOSFET N-CH 40V 100A PWRDI5060-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.6W
- Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type K)
- Package / Case: 8-PowerTDFN
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Package: - |
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Diodes Incorporated |
MOSFET 2P-CH 30V 6.9A 8SO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: - |
Stock166,182 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V TO263 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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