|
|
Diodes Incorporated |
MOSFET P-CH 30V 3.9A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,224 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
|
Package: E-Line-3 |
Stock48,276 |
|
|
|
Diodes Incorporated |
MOSFET P-CH 20V 2.3A SOT23-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock3,118,524 |
|
|
|
Diodes Incorporated |
TRANS NPN 100V 4.5A SOT-89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 195mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 2.1W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
|
Package: TO-243AA |
Stock282,000 |
|
|
|
Diodes Incorporated |
TRANS NPN 20V 1.25A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.25A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 195MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,056 |
|
|
|
Diodes Incorporated |
TRANS PNP 12V 6A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 250mA, 6A
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
- Power - Max: 3W
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock193,380 |
|
|
|
Diodes Incorporated |
TRANS NPN 20V 9A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 9A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 450mA, 9A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
- Power - Max: 3W
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock478,044 |
|
|
|
Diodes Incorporated |
TRANS PNP 200V 0.5A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 10V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock39,876 |
|
|
|
Diodes Incorporated |
TRANS PNP 25V 3A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Power - Max: 2W
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock254,376 |
|
|
|
Diodes Incorporated |
TRANS NPN/PNP 80V/70V 8DFN
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3.5A, 2.5A
- Voltage - Collector Emitter Breakdown (Max): 80V, 70V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 300mA, 3.5A / 270mV @ 200mA, 1.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 40 @ 1.5A, 5V
- Power - Max: 1.7W
- Frequency - Transition: 160MHz, 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x2)
|
Package: 8-WDFN Exposed Pad |
Stock791,520 |
|
|
|
Diodes Incorporated |
DIODE ZENER 39V 3W SMB
- Voltage - Zener (Nom) (Vz): 39V
- Tolerance: ±5%
- Power - Max: 3W
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 29.7V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
|
Package: DO-214AA, SMB |
Stock27,240 |
|
|
|
Diodes Incorporated |
DIODE ZENER ARRAY 27V SOT363
- Configuration: 2 Independent
- Voltage - Zener (Nom) (Vz): 27V
- Tolerance: ±5%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 41 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 21V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock28,830 |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 200V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock1,018,320 |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 60V
- Capacitance @ Vr, F: 125pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock6,448 |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 20V 350MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 350mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 5µA @ 10V
- Capacitance @ Vr, F: 28pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: SC-76, SOD-323 |
Stock466,680 |
|
|
|
Diodes Incorporated |
DIODE SBR 30V 1A SOD323
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 460mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: SC-76, SOD-323 |
Stock1,357,320 |
|
|
|
Diodes Incorporated |
DIODE ARRAY SCHOTTKY 30V D2PAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 16A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Operating Temperature - Junction: -65°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,360 |
|
|
|
Diodes Incorporated |
IC REG LIN 3V/3.3V X2DFN1212-6
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 2
- Voltage - Input (Max): 5.25V
- Voltage - Output (Min/Fixed): 3V, 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
- Current - Output: 150mA, 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 100µA
- PSRR: 75dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: X2-DFN1212-6
|
Package: 6-XFDFN Exposed Pad |
Stock4,432 |
|
|
|
Diodes Incorporated |
IC GATE OR 2CH 2IN X2-DFN1210-8
- Logic Type: OR Gate
- Number of Circuits: 2
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 0.8 V ~ 3.6 V
- Current - Quiescent (Max): 0.5µA
- Current - Output High, Low: 4mA, 4mA
- Logic Level - Low: 0.7 V ~ 0.9 V
- Logic Level - High: 1.6 V ~ 2 V
- Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1210-8
- Package / Case: 8-XFDFN
|
Package: 8-XFDFN |
Stock6,016 |
|
|
|
Diodes Incorporated |
IC BUFF/DVR TRI-ST DUAL 20QFN
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-VFQFN Exposed Pad
- Supplier Device Package: V-QFN4525-20
|
Package: 20-VFQFN Exposed Pad |
Stock5,360 |
|
|
|
Diodes Incorporated |
CLOCK BUFFER TSSOP-20
- Type: -
- Number of Circuits: -
- Ratio - Input:Output: -
- Differential - Input:Output: -
- Input: -
- Output: -
- Frequency - Max: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock2,288 |
|
|
|
Diodes Incorporated |
CLOCK BUFFER SSOP-20
- Type: -
- Number of Circuits: -
- Ratio - Input:Output: -
- Differential - Input:Output: -
- Input: -
- Output: -
- Frequency - Max: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,280 |
|
|
|
Diodes Incorporated |
IC CLOCK GENERATOR 32TQFN
- PLL: Yes
- Main Purpose: Ethernet
- Input: Crystal
- Output: LVCMOS, LVDS
- Number of Circuits: 1
- Ratio - Input:Output: 1:9
- Differential - Input:Output: No/Yes
- Frequency - Max: 125MHz
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 32-WFQFN Exposed Pad
- Supplier Device Package: 32-TQFN (5x5)
|
Package: 32-WFQFN Exposed Pad |
Stock2,448 |
|
|
|
Diodes Incorporated |
MUX DUAL DUAL H/V TONE SW 16QSOP
- Function: Multiplex Controller
- Frequency: -
- RF Type: LNB, DiSEqC? , STBs
- Secondary Attributes: With Dual Tone and Polarity Switch
- Package / Case: 16-SSOP (0.154", 3.90mm Width)
- Supplier Device Package: 16-QSOP
|
Package: 16-SSOP (0.154", 3.90mm Width) |
Stock750,000 |
|
|
|
Diodes Incorporated |
RESET GENERATOR SO-8
- Type: Simple Reset/Power-On Reset
- Number of Voltages Monitored: 1
- Output: Push-Pull, Totem Pole
- Reset: Active Low
- Reset Timeout: 140ms Minimum
- Voltage - Threshold: 4.63V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,744 |
|
|
|
Diodes Incorporated |
DIODE ARR SBR 60V 20A TO220-3
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
|
Package: - |
Request a Quote |
|
|
|
Diodes Incorporated |
DIODE ZENER
- Voltage - Zener (Nom) (Vz): -
- Tolerance: -
- Power - Max: -
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: -
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 8V~24V U-DFN2020-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
|
Package: - |
Request a Quote |
|