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Fairchild/ON Semiconductor |
MOSFET 2N-CH 8SOIC
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,672 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 8SOIC
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,280 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 8MLP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock90,852 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 40V 9A/6.5A DPAK
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-5
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock3,440 |
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Logic Level Gate | 40V | 9A, 6.5A | 24 mOhm @ 9A, 10V | 3V @ 250µA | 20nC @ 10V | 1000pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-5 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 14A/11A 14SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A, 11A
- Rds On (Max) @ Id, Vgs: 13.2 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Power - Max: 1.3W, 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SO
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock72,000 |
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Logic Level Gate | 30V | 14A, 11A | 13.2 mOhm @ 11A, 10V | 3V @ 250µA | 24nC @ 10V | 920pF @ 15V | 1.3W, 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 14A/11A 14-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A, 11A
- Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Power - Max: 1.3W, 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SO
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock96,912 |
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Logic Level Gate | 30V | 14A, 11A | 8.7 mOhm @ 14A, 10V | 3V @ 250µA | 24nC @ 15V | 920pF @ 15V | 1.3W, 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 40V 12A/10A DPAK
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 12A, 10A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock120,012 |
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Logic Level Gate | 40V | 12A, 10A | 12 mOhm @ 12A, 10V | 3V @ 250µA | 53nC @ 10V | 2735pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock449,484 |
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Standard | 30V | 5A | 50 mOhm @ 5A, 10V | 1V @ 250µA | 35nC @ 10V | 525pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 5A 6SSOT
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
- Supplier Device Package: SuperSOT?-6
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Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
Stock6,288 |
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Logic Level Gate | 20V | 5A | 44 mOhm @ 5A, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | 992pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-SSOT Flat-lead, SuperSOT?-6 FLMP | SuperSOT?-6 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 5A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock341,676 |
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Logic Level Gate | 30V | 7A, 5A | 30 mOhm @ 7A, 10V | 3V @ 250µA | 26nC @ 10V | 575pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 40V 9A/6.5A DPAK
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock7,888 |
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Logic Level Gate | 40V | 9A, 6.5A | 24 mOhm @ 9A, 10V | 3V @ 250µA | 20nC @ 10V | 1000pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 50V 0.51A 6-SSOT
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 510mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,160 |
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Logic Level Gate | 50V | 510mA | 2 Ohm @ 510mA, 10V | 2.5V @ 250µA | 1nC @ 10V | 20pF @ 25V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 0.2A SOT-563F
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Power - Max: 446mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock3,200 |
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Logic Level Gate | 20V | 200mA | 5 Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 1.1nC @ 4.5V | 60pF @ 10V | 446mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 0.15A SOT-563F
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 150mA
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
- Power - Max: 446mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock3,104 |
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Logic Level Gate | 20V | 150mA | 8 Ohm @ 150mA, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 100pF @ 10V | 446mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,039,716 |
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Logic Level Gate | 30V | 6.3A, 8.6A | 28 mOhm @ 6.3A, 10V | 3V @ 250µA | 12nC @ 5V | 2040pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9.4A
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,648 |
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Logic Level Gate | 20V | 9.4A | 14 mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 23nC @ 4.5V | 1821pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 40V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,496 |
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Standard | 40V | 5.5A, 4.4A | 39 mOhm @ 5.5A, 10V | 5V @ 250µA | 10nC @ 10V | 410pF @ 20V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 8A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 10V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-Power33 (3x3)
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Package: 8-PowerVDFN |
Stock274,740 |
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Logic Level Gate | 20V | 8A | 26 mOhm @ 8A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | 815pF @ 10V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-Power33 (3x3) |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V 6-SSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.9A, 4.2A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
- Supplier Device Package: SuperSOT?-6 FLMP
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Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
Stock6,960 |
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Logic Level Gate | 20V | 5.9A, 4.2A | 27 mOhm @ 5.9A, 4.5V | 1.5V @ 250µA | 8nC @ 4.5V | 677pF @ 10V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 6-SSOT Flat-lead, SuperSOT?-6 FLMP | SuperSOT?-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 7.3A 6-SSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.3A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
- Supplier Device Package: SuperSOT?-6 FLMP
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Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
Stock5,648 |
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Logic Level Gate | 20V | 7.3A | 20 mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | 840pF @ 10V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 6-SSOT Flat-lead, SuperSOT?-6 FLMP | SuperSOT?-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 3A MICROFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: MicroFET 2x2 Thin
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Package: 6-UFDFN Exposed Pad |
Stock5,552 |
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Logic Level Gate | 20V | 3A | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | MicroFET 2x2 Thin |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 80A EPM15
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: EPM15
- Supplier Device Package: EPM15
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Package: EPM15 |
Stock7,680 |
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Standard | 30V | 80A | 1.6 mOhm @ 40A, 10V | 3V @ 250µA | 295nC @ 10V | 11535pF @ 15V | - | -40°C ~ 150°C (TJ) | Through Hole | EPM15 | EPM15 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 4.9A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock29,580 |
|
Logic Level Gate | 20V | 4.9A | 46 mOhm @ 4.9A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 985pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 60V 60A EPM15
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: EPM15
- Supplier Device Package: EPM15
|
Package: EPM15 |
Stock3,920 |
|
Standard | 60V | 60A | 4.5 mOhm @ 40A, 10V | 4V @ 250µA | 87nC @ 10V | 3890pF @ 25V | - | -40°C ~ 150°C (TJ) | Through Hole | EPM15 | EPM15 |
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|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 75V 65A EPM15
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 65A
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: EPM15
- Supplier Device Package: EPM15
|
Package: EPM15 |
Stock7,824 |
|
Standard | 75V | 65A | 4.3 mOhm @ 40A, 10V | 4V @ 250µA | 148nC @ 10V | 6180pF @ 25V | - | -40°C ~ 150°C (TJ) | Through Hole | EPM15 | EPM15 |
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|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 60V 73A EPM15
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 73A
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6010pF @ 25V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: EPM15
- Supplier Device Package: EPM15
|
Package: EPM15 |
Stock5,440 |
|
Standard | 60V | 73A | 3.3 mOhm @ 40A, 10V | 4V @ 250µA | 129nC @ 10V | 6010pF @ 25V | - | -40°C ~ 150°C (TJ) | Through Hole | EPM15 | EPM15 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A, 8.5A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock406,992 |
|
Logic Level Gate | 30V | 5.5A, 8.5A | 19 mOhm @ 8.5A, 10V | 3V @ 250µA | 12nC @ 5V | 1233pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V 5A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock158,856 |
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Logic Level Gate | 30V | 5A | 55 mOhm @ 5A, 10V | 3V @ 250µA | 9nC @ 5V | 528pF @ 15V | 900mW | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |