Page 100 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQB4N20TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,424
FQD7N10TM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,000
FDI025N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 265A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,616
FQB9N50CFTM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,024
FDS8874
Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock224,712
FDS8670
Fairchild/ON Semiconductor

MOSFET N-CH 30V 21A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock266,880
FDS5692Z
Fairchild/ON Semiconductor

MOSFET N-CH 50V 5.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock210,000
FDS5682
Fairchild/ON Semiconductor

MOSFET N-CH 60V 7.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock126,000
FDP8878
Fairchild/ON Semiconductor

MOSFET N-CH 30V 40A TO-220AB

Package: TO-220-3

Stock103,464
FDD6780
Fairchild/ON Semiconductor

MOSFET N-CH 25V 16.5A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock183,000
FDD6796
Fairchild/ON Semiconductor

MOSFET N-CH 25V 20A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock25,740
FDMS8670
Fairchild/ON Semiconductor

MOSFET N-CH 30V 24A POWER56

Package: 8-PowerTDFN

Stock6,688
NDC632P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.7A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock8,374,344
FDZ294N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 6A 9-BGA

Package: 9-VFBGA

Stock78,324
FDC636P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.8A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock96,420
FDP5N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 5A TO-220

Package: TO-220-3

Stock139,452
FDZ4670S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 25A 20FLFBGA

Package: 20-FLFBGA (30 pos)

Stock2,976
FDMC8678S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A POWER33

Package: 8-PowerTDFN

Stock214,356
FDMC8676
Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A POWER33

Package: 8-PowerTDFN

Stock81,120
FDMS8674
Fairchild/ON Semiconductor

MOSFET N-CH 30V 17A POWER56

Package: 8-PowerTDFN

Stock142,692

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQB4N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,424	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±30V	-	3.13W (Ta), 45W (Tc)	1.4 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD7N10TM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 5.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,000	MOSFET (Metal Oxide)	100V	5.8A (Tc)	10V	4V @ 250µA	7.5nC @ 10V	250pF @ 25V	±25V	-	2.5W (Ta), 25W (Tc)	350 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDI025N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 265A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 265A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 226nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14885pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,616	MOSFET (Metal Oxide)	60V	265A (Tc)	10V	4.5V @ 250µA	226nC @ 10V	14885pF @ 25V	±20V	-	395W (Tc)	2.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
FQB9N50CFTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 173W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,024	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 250µA	35nC @ 10V	1030pF @ 25V	±30V	-	173W (Tc)	850 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDS8874	Fairchild/ON Semiconductor	MOSFET N-CH 30V 16A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock224,712	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	2.5V @ 250µA	72nC @ 10V	3990pF @ 15V	±20V	-	2.5W (Ta)	5.5 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS8670	Fairchild/ON Semiconductor	MOSFET N-CH 30V 21A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock266,880	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	3V @ 250µA	82nC @ 10V	4040pF @ 15V	±20V	-	2.5W (Ta)	3.7 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS5692Z	Fairchild/ON Semiconductor	MOSFET N-CH 50V 5.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock210,000	MOSFET (Metal Oxide)	50V	5.8A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1025pF @ 25V	±20V	-	2.5W (Ta)	24 mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS5682	Fairchild/ON Semiconductor	MOSFET N-CH 60V 7.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock126,000	MOSFET (Metal Oxide)	60V	7.5A (Ta)	4.5V, 10V	2V @ 250µA	35nC @ 10V	1650pF @ 25V	±20V	-	2.5W (Ta)	21 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDP8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 40A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40.5W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	23nC @ 10V	1235pF @ 15V	±20V	-	40.5W (Tc)	15 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDD6780	Fairchild/ON Semiconductor	MOSFET N-CH 25V 16.5A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 32.6W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock183,000	MOSFET (Metal Oxide)	25V	16.5A (Ta), 30A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 10V	1590pF @ 13V	±20V	-	3.7W (Ta), 32.6W (Tc)	8.5 mOhm @ 16.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6796	Fairchild/ON Semiconductor	MOSFET N-CH 25V 20A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2315pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock25,740	MOSFET (Metal Oxide)	25V	20A (Ta), 40A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 10V	2315pF @ 13V	±20V	-	3.7W (Ta), 42W (Tc)	5.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS8670	Fairchild/ON Semiconductor	MOSFET N-CH 30V 24A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3940pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,688	MOSFET (Metal Oxide)	30V	24A (Ta), 42A (Tc)	4.5V, 10V	3V @ 250µA	63nC @ 10V	3940pF @ 15V	±20V	-	2.5W (Ta), 78W (Tc)	2.6 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
NDC632P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2.7A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock8,374,344	MOSFET (Metal Oxide)	20V	2.7A (Ta)	2.7V, 4.5V	1V @ 250µA	15nC @ 4.5V	550pF @ 10V	-8V	-	1.6W (Ta)	140 mOhm @ 2.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDZ294N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 6A 9-BGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 9-BGA (1.5x1.6) Package / Case: 9-VFBGA	Package: 9-VFBGA	Stock78,324	MOSFET (Metal Oxide)	20V	6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10nC @ 4.5V	670pF @ 10V	±12V	-	1.7W (Ta)	23 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	9-BGA (1.5x1.6)	9-VFBGA
FDC636P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2.8A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock96,420	MOSFET (Metal Oxide)	20V	2.8A (Ta)	2.5V, 4.5V	1V @ 250µA	8.5nC @ 4.5V	390pF @ 10V	±8V	-	1.6W (Ta)	130 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDP5N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock139,452	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	5V @ 250µA	15nC @ 10V	640pF @ 25V	±30V	-	85W (Tc)	1.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDZ4670S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 25A 20FLFBGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 20-FLFBGA (3.5x4.0) Package / Case: 20-FLFBGA (30 pos)	Package: 20-FLFBGA (30 pos)	Stock2,976	MOSFET (Metal Oxide)	30V	25A (Ta)	4.5V, 10V	3V @ 1mA	69nC @ 10V	3845pF @ 15V	±20V	-	2.5W (Ta)	2.4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	20-FLFBGA (3.5x4.0)	20-FLFBGA (30 pos)
FDMC8678S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock214,356	MOSFET (Metal Oxide)	30V	15A (Ta), 18A (Tc)	4.5V, 10V	3V @ 1mA	34nC @ 10V	2075pF @ 15V	±20V	-	2.3W (Ta), 41W (Tc)	5.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FDMC8676	Fairchild/ON Semiconductor	MOSFET N-CH 30V 16A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 14.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock81,120	MOSFET (Metal Oxide)	30V	16A (Ta), 18A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 10V	1935pF @ 15V	±20V	-	2.3W (Ta), 41W (Tc)	5.9 mOhm @ 14.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FDMS8674	Fairchild/ON Semiconductor	MOSFET N-CH 30V 17A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock142,692	MOSFET (Metal Oxide)	30V	17A (Ta), 21A (Tc)	4.5V, 10V	3V @ 250µA	37nC @ 10V	2320pF @ 15V	±20V	-	2.5W (Ta), 78W (Tc)	5 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMS8672AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 18A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock235,680	MOSFET (Metal Oxide)	30V	18A (Ta), 28A (Tc)	4.5V, 10V	3V @ 1mA	40nC @ 10V	2600pF @ 15V	±20V	-	2.5W (Ta), 70W (Tc)	5 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMS8670AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 23A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3615pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock70,068	MOSFET (Metal Oxide)	30V	23A (Ta), 42A (Tc)	4.5V, 10V	3V @ 1mA	55nC @ 10V	3615pF @ 15V	±20V	-	2.5W (Ta), 78W (Tc)	3 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMS8662	Fairchild/ON Semiconductor	MOSFET N-CH 30V 28A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,808	MOSFET (Metal Oxide)	30V	28A (Ta), 49A (Tc)	4.5V, 10V	3V @ 250µA	100nC @ 10V	6420pF @ 15V	±20V	-	2.5W (Ta), 83W (Tc)	2 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMS8660AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 28A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5865pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock190,032	MOSFET (Metal Oxide)	30V	28A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	83nC @ 10V	5865pF @ 15V	±20V	-	2.5W (Ta), 104W (Tc)	2.1 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDP8443	Fairchild/ON Semiconductor	MOSFET N-CH 40V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock393,360	MOSFET (Metal Oxide)	40V	20A (Ta), 80A (Tc)	10V	4V @ 250µA	185nC @ 10V	9310pF @ 25V	±20V	-	188W (Tc)	3.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDI8442	Fairchild/ON Semiconductor	MOSFET N-CH 40V 80A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,424	MOSFET (Metal Oxide)	40V	23A (Ta), 80A (Tc)	10V	4V @ 250µA	235nC @ 10V	12200pF @ 25V	±20V	-	254W (Tc)	2.9 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
FDPF52N20T	Fairchild/ON Semiconductor	MOSFET N-CH 200V 52A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,056	MOSFET (Metal Oxide)	200V	52A (Tc)	10V	5V @ 250µA	63nC @ 10V	2900pF @ 25V	±30V	-	38.5W (Tc)	49 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUF75344A3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 208nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4855pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 288.5W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,312	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	208nC @ 20V	4855pF @ 25V	±20V	-	288.5W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3