Page 107 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

SFP9630
Fairchild/ON Semiconductor

MOSFET P-CH 200V 6.5A TO-220

Package: TO-220-3

Stock42,396
SFP9540
Fairchild/ON Semiconductor

MOSFET P-CH 100V 17A TO-220

Package: TO-220-3

Stock37,284
SFM9110TF
Fairchild/ON Semiconductor

MOSFET P-CH 100V 1A SOT-223

Package: TO-261-4, TO-261AA

Stock14,400
SFM9014TF
Fairchild/ON Semiconductor

MOSFET P-CH 60V 1.8A SOT-223

Package: TO-261-4, TO-261AA

Stock3,376
PN3685
Fairchild/ON Semiconductor

MOSFET N-CH TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,976
NDS8410A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 10.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock486,948
IRLR130ATM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,000
IRLR120ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,952
IRL540A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 28A TO-220

Package: TO-220-3

Stock5,968
IRL530A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 14A TO-220

Package: TO-220-3

Stock4,336
IRFW540ATM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 28A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock34,140
IRFU220BTU_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,744
IRFU220BTU_F080
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,376
IRFU214BTU_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 250V 2.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,016
IRFU120ATU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock68,424
IRFS654B_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 250V 21A TO-220F

Package: TO-220-3 Full Pack

Stock3,024
IRFS644B_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 250V 14A TO-220F

Package: TO-220-3 Full Pack

Stock4,048
IRFS634B_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 250V 8.1A TO-220F

Package: TO-220-3 Full Pack

Stock2,752
IRFS614B_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 250V 2.8A TO-220F

Package: TO-220-3 Full Pack

Stock4,624
IRFS540A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 17A TO-220F

Package: TO-220-3 Full Pack

Stock36,012

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SFP9630	Fairchild/ON Semiconductor	MOSFET P-CH 200V 6.5A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock42,396	MOSFET (Metal Oxide)	200V	6.5A (Tc)	10V	4V @ 250µA	36nC @ 10V	965pF @ 25V	±30V	-	70W (Tc)	800 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SFP9540	Fairchild/ON Semiconductor	MOSFET P-CH 100V 17A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock37,284	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	54nC @ 10V	1535pF @ 25V	±30V	-	132W (Tc)	200 mOhm @ 8.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
SFM9110TF	Fairchild/ON Semiconductor	MOSFET P-CH 100V 1A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.52W (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock14,400	MOSFET (Metal Oxide)	100V	1A (Ta)	10V	4V @ 250µA	10nC @ 10V	335pF @ 25V	±30V	-	2.52W (Ta)	1.2 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SFM9014TF	Fairchild/ON Semiconductor	MOSFET P-CH 60V 1.8A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 500 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,376	MOSFET (Metal Oxide)	60V	1.8A (Ta)	10V	4V @ 250µA	11nC @ 10V	350pF @ 25V	±30V	-	2.8W (Ta)	500 mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
PN3685	Fairchild/ON Semiconductor	MOSFET N-CH TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,976	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
NDS8410A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 10.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock486,948	MOSFET (Metal Oxide)	30V	10.8A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 5V	1620pF @ 15V	±20V	-	2.5W (Ta)	12 mOhm @ 10.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLR130ATM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 6.5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,000	MOSFET (Metal Oxide)	100V	13A (Tc)	5V	2V @ 250µA	24nC @ 5V	755pF @ 25V	±20V	-	2.5W (Ta), 46W (Tc)	120 mOhm @ 6.5A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR120ATF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 4.2A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,952	MOSFET (Metal Oxide)	100V	8.4A (Tc)	5V	2V @ 250µA	15nC @ 5V	440pF @ 25V	±20V	-	2.5W (Ta), 35W (Tc)	220 mOhm @ 4.2A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL540A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 28A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 121W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 14A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,968	MOSFET (Metal Oxide)	100V	28A (Tc)	5V	2V @ 250µA	54nC @ 5V	1580pF @ 25V	±20V	-	121W (Tc)	58 mOhm @ 14A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRL530A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 7A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,336	MOSFET (Metal Oxide)	100V	14A (Tc)	5V	2V @ 250µA	24nC @ 5V	755pF @ 25V	±20V	-	62W (Tc)	120 mOhm @ 7A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFW540ATM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 28A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock34,140	MOSFET (Metal Oxide)	100V	28A (Tc)	10V	4V @ 250µA	78nC @ 10V	1710pF @ 25V	±20V	-	3.8W (Ta), 107W (Tc)	52 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU220BTU_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,744	MOSFET (Metal Oxide)	200V	4.6A (Tc)	10V	4V @ 250µA	16nC @ 10V	390pF @ 25V	±30V	-	2.5W (Ta), 40W (Tc)	800 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFU220BTU_F080	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,376	MOSFET (Metal Oxide)	200V	4.6A (Tc)	10V	4V @ 250µA	16nC @ 10V	390pF @ 25V	±30V	-	2.5W (Ta), 40W (Tc)	800 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFU214BTU_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 250V 2.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,016	MOSFET (Metal Oxide)	250V	2.2A (Tc)	10V	4V @ 250µA	10.5nC @ 10V	275pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	2 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFU120ATU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock68,424	MOSFET (Metal Oxide)	100V	8.4A (Tc)	10V	4V @ 250µA	22nC @ 10V	480pF @ 25V	-	-	2.5W (Ta), 32W (Tc)	200 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFS654B_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 250V 21A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,024	MOSFET (Metal Oxide)	250V	21A (Tc)	10V	4V @ 250µA	123nC @ 10V	3400pF @ 25V	±30V	-	50W (Tc)	140 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFS644B_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 250V 14A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,048	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	60nC @ 10V	1600pF @ 25V	±30V	-	43W (Tc)	280 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFS634B_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 250V 8.1A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.05A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,752	MOSFET (Metal Oxide)	250V	8.1A (Tc)	10V	4V @ 250µA	38nC @ 10V	1000pF @ 25V	±30V	-	38W (Tc)	450 mOhm @ 4.05A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFS614B_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 250V 2.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,624	MOSFET (Metal Oxide)	250V	2.8A (Tc)	10V	4V @ 250µA	10.5nC @ 10V	275pF @ 25V	±30V	-	22W (Tc)	2 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFS540A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 17A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock36,012	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	78nC @ 10V	1710pF @ 25V	-	-	39W (Tc)	52 mOhm @ 8.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFR420BTM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 2.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock30,000	MOSFET (Metal Oxide)	500V	2.3A (Tc)	10V	4V @ 250µA	18nC @ 10V	610pF @ 25V	±30V	-	2.5W (Ta), 41W (Tc)	2.6 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR224BTM_TC002	Fairchild/ON Semiconductor	MOSFET N-CH 250V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 1.9A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,200	MOSFET (Metal Oxide)	250V	3.8A (Tc)	10V	4V @ 250µA	18nC @ 10V	450pF @ 25V	±30V	-	-	1.1 Ohm @ 1.9A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR220BTM_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,864	MOSFET (Metal Oxide)	200V	4.6A (Tc)	10V	4V @ 250µA	16nC @ 10V	390pF @ 25V	±30V	-	2.5W (Ta), 40W (Tc)	800 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR210BTM_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 200V 2.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,024	MOSFET (Metal Oxide)	200V	2.7A (Tc)	10V	4V @ 250µA	9.3nC @ 10V	225pF @ 25V	±30V	-	2.5W (Ta), 26W (Tc)	1.5 Ohm @ 1.35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR130ATM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,392	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 250µA	36nC @ 10V	790pF @ 25V	-	-	2.5W (Ta), 41W (Tc)	110 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR120ATM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock70,320	MOSFET (Metal Oxide)	100V	8.4A (Tc)	10V	4V @ 250µA	22nC @ 10V	480pF @ 25V	-	-	2.5W (Ta), 32W (Tc)	200 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFP450B	Fairchild/ON Semiconductor	MOSFET N-CH 500V 14A TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock15,912	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	113nC @ 10V	3800pF @ 25V	±30V	-	205W (Tc)	390 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IRFN214BTA_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 250V 0.6A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,120	MOSFET (Metal Oxide)	250V	600mA (Ta)	10V	4V @ 250µA	10.5nC @ 10V	275pF @ 25V	±30V	-	1.8W (Ta)	2 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)