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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 20A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 38.5W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock12,540 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 59.5nC @ 10V | 3120pF @ 25V | ±30V | - | 38.5W (Tc) | 230 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 75A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8225pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock140,520 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4.5V @ 250µA | 116nC @ 10V | 8225pF @ 25V | ±20V | - | 208W (Tc) | 9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 8A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3 (Y-Forming)
- Package / Case: TO-220-3 Full Pack, Formed Leads
|
Package: TO-220-3 Full Pack, Formed Leads |
Stock7,552 |
|
MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 2050pF @ 25V | ±30V | - | 59W (Tc) | 1.55 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 105V 41A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 105V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 41A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock104,304 |
|
MOSFET (Metal Oxide) | 105V | 5.9A (Ta), 41A (Tc) | 6V, 10V | 4V @ 250µA | 37nC @ 10V | 1670pF @ 25V | ±20V | - | 135W (Tc) | 33 mOhm @ 41A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 13A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock20,628 |
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MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | ±30V | - | 195W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 300V 14.4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,360 |
|
MOSFET (Metal Oxide) | 300V | 14.4A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1360pF @ 25V | ±30V | - | 147W (Tc) | 290 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 55A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 27.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,440 |
|
MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 4V @ 250µA | 37nC @ 10V | 1510pF @ 25V | ±25V | - | 48W (Tc) | 22 mOhm @ 27.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock200,280 |
|
MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 625pF @ 25V | ±30V | - | 73W (Tc) | 1.1 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
- Rds On (Max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock8,316 |
|
MOSFET (Metal Oxide) | 400V | 10.5A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1090pF @ 25V | ±30V | - | 44W (Tc) | 530 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock441,780 |
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MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 11.6A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock58,812 |
|
MOSFET (Metal Oxide) | 150V | 11.6A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 910pF @ 25V | ±25V | - | 53W (Tc) | 160 mOhm @ 5.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 12.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock30,288 |
|
MOSFET (Metal Oxide) | 500V | 12.5A (Tc) | 10V | 5V @ 250µA | 60nC @ 10V | 2300pF @ 25V | ±30V | - | 170W (Tc) | 430 mOhm @ 6.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 325W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock25,224 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 275nC @ 20V | 4000pF @ 25V | ±20V | - | 325W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 11A ZNR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35.7W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock4,400 |
|
MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 4.5V @ 1.1mA | 56nC @ 10V | 2350pF @ 100V | ±20V | - | 35.7W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock15,384 |
|
MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 4V @ 250µA | 235nC @ 20V | 3750pF @ 25V | ±20V | - | 270W (Tc) | 10 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 15A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock10,056 |
|
MOSFET (Metal Oxide) | 400V | 15A (Tc) | 10V | 5V @ 250µA | 36nC @ 10V | 1750pF @ 25V | ±30V | - | 170W (Tc) | 300 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 900V 11A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock390,000 |
|
MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 3290pF @ 25V | ±30V | - | 300W (Tc) | 1.1 Ohm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 53A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 26.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock6,468 |
|
MOSFET (Metal Oxide) | 60V | 53A (Tc) | 10V | 4V @ 250µA | 112nC @ 10V | 4120pF @ 25V | ±25V | - | 62W (Tc) | 10 mOhm @ 26.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 40A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock5,376 |
|
MOSFET (Metal Oxide) | 250V | 40A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4000pF @ 25V | ±30V | - | 280W (Tc) | 70 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 85A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 42.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock142,200 |
|
MOSFET (Metal Oxide) | 60V | 85A (Tc) | 10V | 4V @ 250µA | 112nC @ 10V | 4120pF @ 25V | ±25V | - | 160W (Tc) | 10 mOhm @ 42.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock18,768 |
|
MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 20V | 2750pF @ 25V | ±20V | - | 230W (Tc) | 14 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 27A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock115,692 |
|
MOSFET (Metal Oxide) | 250V | 27A (Tc) | 10V | 5V @ 250µA | 65nC @ 10V | 2450pF @ 25V | ±30V | - | 210W (Tc) | 110 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 28A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 82 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock7,776 |
|
MOSFET (Metal Oxide) | 200V | 28A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2220pF @ 25V | ±30V | - | 50W (Tc) | 82 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 285W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock50,520 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 210nC @ 20V | 3200pF @ 25V | ±20V | - | 285W (Tc) | 8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 14A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9160pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 242W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock104,280 |
|
MOSFET (Metal Oxide) | 60V | 14A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 145nC @ 10V | 9160pF @ 15V | ±20V | - | 242W (Tc) | 6 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 57A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 28.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock310,224 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3300pF @ 25V | ±25V | - | 160W (Tc) | 23 mOhm @ 28.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 65A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock587,688 |
|
MOSFET (Metal Oxide) | 60V | 65A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 2410pF @ 25V | ±25V | - | 150W (Tc) | 16 mOhm @ 32.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock156,684 |
|
MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |