Page 75 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

HUFA76609D3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,704
HUFA76609D3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 10A TO-251AA

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock36,000
FQPF5N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 3.9A TO-220F

Package: TO-220-3 Full Pack

Stock3,328
FQPF5N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 5A TO-220F

Package: TO-220-3 Full Pack

Stock107,100
FQB6N15TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 6.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,448
FQB13N06LTM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 13.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,160
FQB3P20TM
Fairchild/ON Semiconductor

MOSFET P-CH 200V 2.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,800
FQB5N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,856
FQI1P50TU
Fairchild/ON Semiconductor

MOSFET P-CH 500V 1.5A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,616
FQB2P25TM
Fairchild/ON Semiconductor

MOSFET P-CH 250V 2.3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,240
FQD6N40CTF
Fairchild/ON Semiconductor

MOSFET N-CH 400V 4.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,512
FQD9N25TF
Fairchild/ON Semiconductor

MOSFET N-CH 250V 7.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,384
FQD14N15TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,388
HUF76013D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 20V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock211,200
FQB13N10LTM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,680
FQD30N06LTM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 24A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock61,200
HUF76407P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 13A TO-220AB

Package: TO-220-3

Stock53,640
FQU6N40CTU
Fairchild/ON Semiconductor

MOSFET N-CH 400V 4.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,488
FQB3N25TM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 2.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,528
FQPF17N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 11.2A TO-220F

Package: TO-220-3 Full Pack

Stock2,032

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
HUFA76609D3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,704	MOSFET (Metal Oxide)	100V	10A (Tc)	4.5V, 10V	3V @ 250µA	16nC @ 10V	425pF @ 25V	±16V	-	49W (Tc)	160 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76609D3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A TO-251AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock36,000	MOSFET (Metal Oxide)	100V	10A (Tc)	4.5V, 10V	3V @ 250µA	16nC @ 10V	425pF @ 25V	±16V	-	49W (Tc)	160 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
FQPF5N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 3.9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.95A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,328	MOSFET (Metal Oxide)	300V	3.9A (Tc)	10V	5V @ 250µA	13nC @ 10V	430pF @ 25V	±30V	-	35W (Tc)	900 mOhm @ 1.95A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF5N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock107,100	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	24nC @ 10V	625pF @ 25V	±30V	-	38W (Tc)	1.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB6N15TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 6.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,448	MOSFET (Metal Oxide)	150V	6.4A (Tc)	10V	4V @ 250µA	8.5nC @ 10V	270pF @ 25V	±25V	-	3.75W (Ta), 63W (Tc)	600 mOhm @ 3.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB13N06LTM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 13.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,160	MOSFET (Metal Oxide)	60V	13.6A (Tc)	5V, 10V	2.5V @ 250µA	6.4nC @ 5V	350pF @ 25V	±20V	-	3.75W (Ta), 45W (Tc)	110 mOhm @ 6.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB3P20TM	Fairchild/ON Semiconductor	MOSFET P-CH 200V 2.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,800	MOSFET (Metal Oxide)	200V	2.8A (Tc)	10V	5V @ 250µA	8nC @ 10V	250pF @ 25V	±30V	-	3.13W (Ta), 52W (Tc)	2.7 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB5N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,856	MOSFET (Metal Oxide)	200V	4.5A (Tc)	5V, 10V	2V @ 250µA	6.2nC @ 5V	325pF @ 25V	±25V	-	3.13W (Ta), 52W (Tc)	1.2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQI1P50TU	Fairchild/ON Semiconductor	MOSFET P-CH 500V 1.5A I2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,616	MOSFET (Metal Oxide)	500V	1.5A (Tc)	10V	5V @ 250µA	14nC @ 10V	350pF @ 25V	±30V	-	3.13W (Ta), 63W (Tc)	10.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQB2P25TM	Fairchild/ON Semiconductor	MOSFET P-CH 250V 2.3A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,240	MOSFET (Metal Oxide)	250V	2.3A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	250pF @ 25V	±30V	-	3.13W (Ta), 52W (Tc)	4 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD6N40CTF	Fairchild/ON Semiconductor	MOSFET N-CH 400V 4.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,512	MOSFET (Metal Oxide)	400V	4.5A (Tc)	10V	4V @ 250µA	20nC @ 10V	625pF @ 25V	±30V	-	2.5W (Ta), 48W (Tc)	1 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD9N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,384	MOSFET (Metal Oxide)	250V	7.4A (Tc)	10V	5V @ 250µA	20nC @ 10V	700pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	420 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD14N15TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	150V	10A (Tc)	10V	4V @ 250µA	23nC @ 10V	715pF @ 25V	±25V	-	2.5W (Ta), 50W (Tc)	210 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76013D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 20V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 624pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock211,200	MOSFET (Metal Oxide)	20V	20A (Tc)	5V, 10V	3V @ 250µA	17nC @ 10V	624pF @ 20V	±20V	-	50W (Tc)	22 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQB13N10LTM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 12.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,680	MOSFET (Metal Oxide)	100V	12.8A (Tc)	5V, 10V	2V @ 250µA	12nC @ 5V	520pF @ 25V	±20V	-	3.75W (Ta), 65W (Tc)	180 mOhm @ 6.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD30N06LTM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock61,200	MOSFET (Metal Oxide)	60V	24A (Tc)	5V, 10V	2.5V @ 250µA	20nC @ 5V	1040pF @ 25V	±20V	-	2.5W (Ta), 44W (Tc)	39 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76407P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 13A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock53,640	MOSFET (Metal Oxide)	60V	13A (Tc)	4.5V, 10V	3V @ 250µA	11.3nC @ 10V	350pF @ 25V	±16V	-	38W (Tc)	92 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQU6N40CTU	Fairchild/ON Semiconductor	MOSFET N-CH 400V 4.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,488	MOSFET (Metal Oxide)	400V	4.5A (Tc)	10V	4V @ 250µA	20nC @ 10V	625pF @ 25V	±30V	-	2.5W (Ta), 48W (Tc)	1 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQB3N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 2.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,528	MOSFET (Metal Oxide)	250V	2.8A (Tc)	10V	5V @ 250µA	5.2nC @ 10V	170pF @ 25V	±30V	-	3.13W (Ta), 45W (Tc)	2.2 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF17N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 11.2A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,032	MOSFET (Metal Oxide)	80V	11.2A (Tc)	10V	4V @ 250µA	15nC @ 10V	450pF @ 25V	±25V	-	30W (Tc)	115 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB7P06TM	Fairchild/ON Semiconductor	MOSFET P-CH 60V 7A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,984	MOSFET (Metal Oxide)	60V	7A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	295pF @ 25V	±25V	-	3.75W (Ta), 45W (Tc)	410 mOhm @ 3.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB5P10TM	Fairchild/ON Semiconductor	MOSFET P-CH 100V 4.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,824	MOSFET (Metal Oxide)	100V	4.5A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	250pF @ 25V	±30V	-	3.75W (Ta), 40W (Tc)	1.05 Ohm @ 2.25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB7N10TM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 7.3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,472	MOSFET (Metal Oxide)	100V	7.3A (Tc)	10V	4V @ 250µA	7.5nC @ 10V	250pF @ 25V	±25V	-	3.75W (Ta), 40W (Tc)	350 mOhm @ 3.65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB4N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,880	MOSFET (Metal Oxide)	200V	3.8A (Tc)	5V, 10V	2V @ 250µA	5.2nC @ 5V	310pF @ 25V	±20V	-	3.13W (Ta), 45W (Tc)	1.35 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD19N10TF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 15.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,544	MOSFET (Metal Oxide)	100V	15.6A (Tc)	10V	4V @ 250µA	25nC @ 10V	780pF @ 25V	±25V	-	2.5W (Ta), 50W (Tc)	100 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75307T3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 2.6A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock8,424	MOSFET (Metal Oxide)	55V	2.6A (Ta)	10V	4V @ 250µA	17nC @ 20V	250pF @ 25V	±20V	-	1.1W (Ta)	90 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FQD30N06TF	Fairchild/ON Semiconductor	MOSFET N-CH 60V 22.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,928	MOSFET (Metal Oxide)	60V	22.7A (Tc)	10V	4V @ 250µA	25nC @ 10V	945pF @ 25V	±25V	-	2.5W (Ta), 44W (Tc)	45 mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU30N06LTU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,352	MOSFET (Metal Oxide)	60V	24A (Tc)	5V, 10V	2.5V @ 250µA	20nC @ 5V	1040pF @ 25V	±20V	-	2.5W (Ta), 44W (Tc)	39 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA