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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 8 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,832 |
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25V | - | 80mA @ 15V | - | 3V @ 10nA | - | 8 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 18 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,928 |
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25V | - | 10mA @ 15V | - | 500mV @ 10nA | - | 18 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 12 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,864 |
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25V | - | 40mA @ 15V | - | 2V @ 10nA | - | 12 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 18 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,896 |
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25V | - | 10mA @ 15V | - | 500mV @ 10nA | - | 18 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 8 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,704 |
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25V | - | 80mA @ 15V | - | 3V @ 10nA | - | 8 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 12 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,016 |
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25V | - | 40mA @ 15V | - | 2V @ 10nA | - | 12 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 12 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,192 |
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25V | - | 40mA @ 15V | - | 2V @ 10nA | - | 12 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 8 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,032 |
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25V | - | 80mA @ 15V | - | 3V @ 10nA | - | 8 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 18 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock12,780 |
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25V | - | 10mA @ 15V | - | 500mV @ 10nA | - | 18 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
- Resistance - RDS(On): 75 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,632 |
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30V | - | 10mA @ 20V | - | 10V @ 1µA | 45pF @ 15V | 75 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 8 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,544 |
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25V | - | 80mA @ 15V | - | 3V @ 10nA | - | 8 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 5 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,608 |
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25V | - | 150mA @ 15V | - | 4V @ 3nA | 30pF @ 10V (VGS) | 5 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 10 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,528 |
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25V | - | 30mA @ 15V | - | 1V @ 3nA | 30pF @ 10V (VGS) | 10 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
- Resistance - RDS(On): 150 Ohm
- Power - Max: 350mW
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,032 |
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30V | - | 5mA @ 20V | - | 5V @ 1µA | 45pF @ 15V | 150 Ohm | 350mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 350MW TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
- Resistance - RDS(On): 150 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,920 |
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30V | - | 5mA @ 20V | - | 5V @ 1µA | 45pF @ 15V | 150 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 125 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,080 |
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30V | - | 7mA @ 15V | - | 3V @ 10nA | - | 125 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 300 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock212,892 |
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30V | - | 1.5mA @ 15V | - | 800mV @ 10nA | - | 300 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 250 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,672 |
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30V | - | 2mA @ 15V | - | 1V @ 10nA | - | 250 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 250 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock285,240 |
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30V | - | 2mA @ 15V | - | 1V @ 10nA | - | 250 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 125 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,384 |
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30V | - | 7mA @ 15V | - | 3V @ 10nA | - | 125 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 300 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,184 |
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30V | - | 1.5mA @ 15V | - | 800mV @ 10nA | - | 300 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 300 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,152 |
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30V | - | 1.5mA @ 15V | - | 800mV @ 10nA | - | 300 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 125 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,872 |
|
30V | - | 7mA @ 15V | - | 3V @ 10nA | - | 125 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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|
Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 250 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,680 |
|
30V | - | 2mA @ 15V | - | 1V @ 10nA | - | 250 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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|
Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 300 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,256 |
|
30V | - | 1.5mA @ 15V | - | 800mV @ 10nA | - | 300 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 300 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,288 |
|
30V | - | 1.5mA @ 15V | - | 800mV @ 10nA | - | 300 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 85 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock5,680 |
|
30V | - | 20mA @ 15V | - | 5V @ 10nA | - | 85 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 85 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,064 |
|
30V | - | 20mA @ 15V | - | 5V @ 10nA | - | 85 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |